Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma

Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.

Effect of Discharge Parameters on Properties of Diamond-Like Carbon Films Prepared by Dual-Frequency Capacitively Coupled Plasma Source

Diamond-like carbon （DLC） films were prepared with CH4-Ar using a capacitively coupled plasma enhanced chemical vapor deposition （CCP-CVD） method driven by dual-frequency of 41 MHz and 13.56 MHz in combination. Due to a coupling via bulk plasma, the self-bias voltage depended not only on the radiofrequency （RF） power of the corresponding electrode but also on another RF power of the counter electrode. The influence of the discharge parameters on the deposition rate, optical and Raman properties of the deposited films was investigated. The optical band decreased basically with the increase in the input power of both the low frequency and high frequency. Raman measurements show that the deposited films have a maximal sp3 content with an applied negative self-bias voltage of -150 V, while high frequency power causes a continuous increase in the sp3 content. The measurement of atomic force microscope （AFM） shows that the surface of the deposited films under ion-bombardment becomes smoother than those with non-intended self-bias voltage.

Investigation of Capacitively Coupled Argon Plasma Driven by Dual-Frequency with Different Frequency Configurations

Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.

Frequency Matching Effects on Characteristics of Bulk Plasmas and Sheaths for Dual-Frequency Capacitively Coupled Argon Discharges: One-Dimensional Fluid Simulation

A one-dimensional fluid model is proposed to simulate the dual-frequency capacitively coupled plasma for Ar discharges. The influences of the low frequency on the plasma density, electron temperature, sheath voltage drop, and ion energy distribution at the powered electrode are investigated. The decoupling effect of the two radio-frequency sources on the plasma parameters, especially in the sheath region, is discussed in detail.

Characteristics of dual-frequency capacitively coupled SF_6/O_2 plasma and plasma texturing of multi-crystalline silicon

Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon （mc-Si） surface texturing. In this paper, capacitively coupled plasma （CCP） driven by a dual frequency （DF） of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency （RF） input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3 x 109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom （[F]/[O]） in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109 cm-3.

Determination of Plasma Parameters in a Dual-Frequency Capacitively Coupled CF_4 Plasma Using Optical Emission Spectroscopy

Optical emission spectroscopy measurements of dual-frequency capacitively coupled CF4 plasmas were carried out. The gas temperature （Tg） was acquired by fitting the optical emission spectra of a CF B-X system in 201～206 nm. The atomic fluorine concentration and the electron temperature （Te） were obtained by trace rare gas optical emission spectroscopy and a modified Boltzmann plot technique, respectively. It was found that the gas temperature was about 620±30 K at 50 mTorr and the atomic fluorine concentration increased while the electron temperature decreased with increasing gas pressure and power of high frequency （60 MHz）. With increasing low frequency （2 MHz） power, the electron temperature also increased, but the atomic fluorine concentration was insensitive to this change. The generation and disappearance mecha- nisms of F atoms are discussed.

Abnormal Enhancement of N_2^+ Emission Induced by Lower Frequency in N_2 Dual-Frequency Capacitively Coupled Plasmas

Nitrogen dual-frequency capacitively coupled plasmas （DF-CCPs） with different fre- quency configurations, i.e., 60/2 MHz and 60/13.56 MHz, are investigated by means of opticM emission spectroscopy （OES） and a floating double probe. The excited nitrogen molecule ion N＋（B） is monitored by measuring the emission intensity of the （0,0） bandhead of the first neg- ative system （FNS） at 391.44 nm. It is shown that in the discharge with 60/13.56 MHz, the N＋ emission intensity decreases with the increase in pressure. In the discharge with 60/2 MHz, however, an abnormal enhancement of N＋ emission at higher pressure is observed when a higher power of 2 MHz is added. Variation in the ion density shows a similar dependence on the gas pressure. This indicates that in the discharge with 60/2 MHz there is a mode transition from the alpha to gamma type when a higher power of 2 MHz is added at high pressures. Combining the measurements using OES and double probe, the influence of low frequency on the discharge is investigated and the excitation route of the N＋（B） state in the discharge of 60/2 MHz is also discussed.

Experimental Characterization of Dual-Frequency Capacitively Coupled Plasma with Inductive Enhancement in Argon

The dual-frequency capacitively coupled plasma （DF-CCP） with inductive enhancement system is a newly designed plasma reactor. Different from the conventional inductively coupled plasma （ICP） reactors, now a radio frequency （rf） power is connected to an antenna placed outside the chamber with a one-turn bare coil placed between two electrodes in DF-CCP. This paper gives a detailed description of its structure of discharges in this apparatus were made via a Moreover, investigations on some characteristics Langmuir probe.

Customized modulation on plasma uniformity by non-uniform magnetic field in capacitively coupled plasma

A two-dimensional fluid model based on COMSOL Multiphysics is developed to investigate the modulation of static magnetic field on plasma homogeneity in a capacitively coupled plasma(CCP)chamber. To generate a static magnetic field, direct current is applied to a circular coil located at the top of the chamber. By adjusting the magnetic field's configuration, which is done by altering the coil current and position, both the plasma uniformity and density can be significantly modulated. In the absence of the magnetic field, the plasma density exhibits an inhomogeneous distribution characterized by higher values at the plasma edge and lower values at the center. The introduction of a magnetic field generated by coils results in a significant increase in electron density near the coils. Furthermore, an increase in the sets of coils improves the uniformity of the plasma. By flexibly adjusting the positions of the coils and the applied current,a substantial enhancement in overall uniformity can be achieved. These findings demonstrate the feasibility of using this method for achieving uniform plasma densities in industrial applications.

Abnormal transition of the electron energy distribution with excitation of the second harmonic in low-pressure radio-frequency capacitively coupled plasmas

The self-excited second harmonic in radio-frequency capacitively coupled plasma was significantly enhanced by adjusting the external variable capacitor.At a lower pressure of 3 Pa,the excitation of the second harmonic caused an abnormal transition of the electron energy probability function,resulting in abrupt changes in the electron density and temperature.Such changes in the electron energy probability function as well as the electron density and temperature were not observed at the higher pressure of 16 Pa under similar harmonic changes.The phenomena are related to the influence of the second harmonic on stochastic heating,which is determined by both amplitude and the relative phase of the harmonics.The results suggest that the self-excited high-order harmonics must be considered in practical applications of lowpressure radio-frequency capacitively coupled plasmas.

Effect of a negative DC bias on a capacitively coupled Ar plasma operated at different radiofrequency voltages and gas pressures

The effect of a negative DC bias,|V_(dc)|,on the electrical parameters and discharge mode is investigated experimentally in a radiofrequency(RF)capacitively coupled Ar plasma operated at different RF voltage amplitudes and gas pressures.The electron density is measured using a hairpin probe and the spatio-temporal distribution of the electron-impact excitation rate is determined by phase-resolved optical emission spectroscopy.The electrical parameters are obtained based on the waveforms of the electrode voltage and plasma current measured by a voltage probe and a current probe.It was found that at a low|V_(dc)|,i.e.inα-mode,the electron density and RF current decline with increasing|V_(dc)|;meanwhile,the plasma impedance becomes more capacitive due to a widened sheath.Therefore,RF power deposition is suppressed.When|V_(dc)|exceeds a certain value,the plasma changes toα–γhybrid mode(or the discharge becomes dominated by theγ-mode),manifesting a drastically growing electron density and a moderately increasing RF current.Meanwhile,the plasma impedance becomes more resistive,so RF power deposition is enhanced with|V_(dc)|.We also found that the electrical parameters show similar dependence on|V_(dc)|at different RF voltages,andα–γmode transition occurs at a lower|V_(dc)|at a higher RF voltage.By increasing the pressure,plasma impedance becomes more resistive,so RF power deposition and electron density are enhanced.In particular,theα–γmode transition tends to occur at a lower|V_(dc)|with increase in pressure.

Improved Double-Probe Technique for Spatially Resolved Diagnosis of Dual-Frequency Capacitive Plasmas

The conventional double-probe technique was improved with a combination of selfpowering and radio-frequency（RF） choking.RF perturbations in dual-frequency capacitively coupled discharge were effectively eliminated,as judged by the disappearance of self-bias on the probes.The improved technique was tested by spatially resolved measurements of the electron temperature and ion density in both the axial and radial directions of a dual-frequency capacitive plasma.The measured data in the axial direction were compared with simulation results,and they were excellently consistent with each other.The measured radial distributions of the ion density and electron temperature were influenced significantly by the lower frequency（LF） power.It was shown that superposition of the lower frequency to the higher frequency（HF） power shifted the maximum ion density from the radial center to the edge region,while the trend for the electron temperature profile was the opposite.The changing feature of the ion density distribution is qualitatively consistent with that of the optical emission intensity reported.

Capacitive coupling induced Kondo–Fano interference in side-coupled double quantum dots

We report capacitive coupling induced Kondo–Fano(K–F) interference in a double quantum dot(DQD) by systematically investigating its low-temperature properties on the basis of hierarchical equations of motion evaluations. We show that the interdot capacitive coupling U12 splits the singly-occupied(S-O) state in quantum dot 1(QD1) into three quasi-particle substates: the unshifted S-O0 substate, and elevated S-O1 and S-O2. As U12 increases, S-O2 and S-O1 successively cross through the Kondo resonance state at the Fermi level(ω = 0), resulting in the so-called Kondo-I(KI), K–F, and Kondo-II(KII) regimes. While both the KI and KII regimes have the conventional Kondo resonance properties, remarkable Kondo–Fano interference features are shown in the K–F regime. In the view of scattering, we propose that the phase shift η(ω)is suitable for analysis of the Kondo–Fano interference. We present a general approach for calculating η(ω) and applying it to the DQD in the K–F regime where the two maxima of η(ω = 0) characterize the interferences between the Kondo resonance state and S-O2 and S-O1 substates, respectively.

Effects of Low-Frequency Source on a Dual-Frequency Capacitive Sheath near a Concave Electrode

A self-consistent two-dimensional （2D） collisionless fluid model is developed to sim- ulate the effects of the low-frequency （LF） power on a dual frequency （DF） capacitive sheath over an electrode with a cylindrical hole. In this paper, the time-averaged potential, electric field （E- field）, ion density in the sheath, and ion energy distributions （IEDs） at the center of the cylindrical hole＇s bottom are calculated and compared for different LF powers. The results show that the LF power is crucial for determining the sheath structure. As the LF power decreases, the potential drop decreases, the sheath becomes thinner, and the plasma molding effect seems to be more significant. The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.

A New Configuration for Planar Magnetic Elements to Reduce Capacitive Couplings

This paper presents an analysis of planar magnetic element configurations in order to reduce capacitive couplings between the windings. The capacitive couplings between layers of planar magnetic elements introduce a stray capacitor which can conduct high frequency currents when high dv/dt voltage is applied. High frequency current may cause electromagnetic interference （EMI） and harmonic problems. The investigation and simulation results, both 2D and 3D Finite Element （FE） show the effect of shifting the planar layers in reduction of the capacitive couplings. The simulation results are compared with test results to validate the proposition.

Energy Recovery Capacitance Coupling Logic and Its Synthesis Methodology

A novel energy recovery logic style ERCCL （energy recovery capacitance coupling logic） , which has good energy performance compared to the conventional CMOS logic and other advanced energy recovery logic, is proposed. ERCCL uses capacitance coupling to perform a logic function, so it can energy-efficiently implement a high fan-in complex logic in a single gate. ERCCL is also a type of threshold logic. The gate count of a system based on ERCCL can be significantly reduced,which,in turn,will decrease the energy loss. A threshold logic synthesis methodology for ERCCL is also presented. MCNC benchmarks are run through the proposed synthesis methodology. The results indicate that about an 80% reduction in gate count can be obtained when compared with the synthesis results of SIS.

Plasma Uniformity in a Dual Frequency Capacitively Coupled Plasma Reactor Measured by Optical Emission Spectroscopy

Local measurement of plasma radial uniformity was performed in a dual frequency capacitively coupled argon plasma （DF-CCP） reactor using an optical probe. The optical probe collects the light emission from a small separate volume in plasma, thus enabling to diagnose the plasma uniformity for different experimental parameters. Both the gas pressure and the low- frequency （LF） power have apparent effects on the radial uniformity of argon plasma. With the increase in either pressure or LF power, the emission profiles changed from a bell-shaped to a double-peak distribution. The influence of a fused-silica ring around the electrodes on the plasma uniformity was also studied using the optical probe. Possible reasons that result in nonuniform plasmas in our experiments are discussed.

Engineering Model for Detecting Sensitivity of the Coupling Capacitance Detector

The sensitivity engineering model of the coupling capacitance detector is built to provide the theoretic foundation for designing its circuits and electrodes scientifically. The sensitivity concept model of the capacitance proximity detector is discussed, and the detecting sensitivity of the coupling capacitance detector is analyzed theoretically. Then the sensitivity engineering model, which can reflect the main parameters relationship of the detecting circuit is set up based on the foregoing analyses. It is concluded that: ① the sensitivity is mainly correlative with some parameters including the voltage transmission factor of the demodulator, the oscillating voltage amplitude and the amplitude variation constant of the oscillator; ② the sensitivity is also influenced by the areas of electrodes and the distance between electrodes of the detector.

Design of a hexagonal air-coupled capacitive micromachined ultrasonic transducer for air parametric array

An air parametric array can generate a highly directional beam of audible sound in air,which has a wide range of applications in targeted audio delivery.Capacitive micromachined ultrasonic transducer(CMUTs)have great potential for air-coupled applications,mainly because of their low acoustic impedance.In this study,an air-coupled CMUT array is designed as an air parametric array.A hexagonal array is proposed to improve the directivity of the sound generated.A finite element model of the CMUT is established in COMSOL software to facilitate the choice of appropriate structural parameters of the CMUT cell.The CMUT array is then fabricated by a wafer bonding process with high consistency.The performances of the CMUT are tested to verify the accuracy of the finite element analysis.By optimizing the component parameters of the bias-T circuit used for driving the CMUT,DC and AC voltages can be effectively applied to the top and bottom electrodes of the CMUT to provide efficient ultrasound transmission.Finally,the prepared hexagonal array is successfully used to conduct preliminary experiments on its application as an air parametric array.

Surface modification of silicone rubber by CF4 radio frequency capacitively coupled plasma for improvement of flashover

The flashover performance of insulating materials plays an important role in the development of high-voltage insulation systems.In this paper,silicone rubber(SIR)is modified by CF4 radio frequency capacitively coupled plasma(CCP)for the improvement of surface insulation performance.The discharge mode and active particles of CCP are diagnosed by the digital single-lens reflex and the spectrometer.Scanning electron microscopy and x-ray photoelectron spectroscopy are used for the surface physicochemical properties of samples,while the surface charge dissipation,charge accumulation measurement,and flashover test are applied for the surface electrical characteristics.Experimental results show that the fluorocarbon groups can be grafted and the surface roughness increases after plasma treatment.Besides,the surface charge dissipation is decelerated and the positive charge accumulation is inhibited obviously for the treated samples.Furthermore,the surface flashover voltage can be increased by 26.67%after 10 min of treatment.It is considered that strong electron affinity of C–F and increased surface roughness can contribute to deepening surface traps,which not only inhibits the development of secondary electron emission avalanche but also alleviates the surface charge accumulation and finally improves the surface flashover voltage of SIR.