Nitrogen dual-frequency capacitively coupled plasmas （DF-CCPs） with different fre- quency configurations, i.e., 60/2 MHz and 60/13.56 MHz, are investigated by means of opticM emission spectroscopy （OES） and a floa...Nitrogen dual-frequency capacitively coupled plasmas （DF-CCPs） with different fre- quency configurations, i.e., 60/2 MHz and 60/13.56 MHz, are investigated by means of opticM emission spectroscopy （OES） and a floating double probe. The excited nitrogen molecule ion N＋（B） is monitored by measuring the emission intensity of the （0,0） bandhead of the first neg- ative system （FNS） at 391.44 nm. It is shown that in the discharge with 60/13.56 MHz, the N＋ emission intensity decreases with the increase in pressure. In the discharge with 60/2 MHz, however, an abnormal enhancement of N＋ emission at higher pressure is observed when a higher power of 2 MHz is added. Variation in the ion density shows a similar dependence on the gas pressure. This indicates that in the discharge with 60/2 MHz there is a mode transition from the alpha to gamma type when a higher power of 2 MHz is added at high pressures. Combining the measurements using OES and double probe, the influence of low frequency on the discharge is investigated and the excitation route of the N＋（B） state in the discharge of 60/2 MHz is also discussed.展开更多
Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） wer...Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.展开更多
Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are inves...Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.展开更多
This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe m...This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe measurements. Two major processes are considered in this model, electron-impact excitation and the spontaneous radiative decay. The diffusion loss term, which is found to be important for the two metastable states （4s[3/2]2, 4s＇[1/2]0）, is also taken into account. Behaviours of representative metastable and radiative states are discussed. Two emission lines （located at 696.5 nm and 750.4 nm） are selected and intensities are measured to obtain populated densities of the corresponding radiative states in the argon plasma. The calculated results agree well with that measured by Langmuir probe, indicating that the current model combined with optical emission spectroscopy is a candidate tool for electron density and temperature measurement in radio frequency capacitively coupled discharges.展开更多
基金supported by National Natural Science Foundation of China (Nos.10635010, 10775103)
文摘Nitrogen dual-frequency capacitively coupled plasmas （DF-CCPs） with different fre- quency configurations, i.e., 60/2 MHz and 60/13.56 MHz, are investigated by means of opticM emission spectroscopy （OES） and a floating double probe. The excited nitrogen molecule ion N＋（B） is monitored by measuring the emission intensity of the （0,0） bandhead of the first neg- ative system （FNS） at 391.44 nm. It is shown that in the discharge with 60/13.56 MHz, the N＋ emission intensity decreases with the increase in pressure. In the discharge with 60/2 MHz, however, an abnormal enhancement of N＋ emission at higher pressure is observed when a higher power of 2 MHz is added. Variation in the ion density shows a similar dependence on the gas pressure. This indicates that in the discharge with 60/2 MHz there is a mode transition from the alpha to gamma type when a higher power of 2 MHz is added at high pressures. Combining the measurements using OES and double probe, the influence of low frequency on the discharge is investigated and the excitation route of the N＋（B） state in the discharge of 60/2 MHz is also discussed.
基金supported by National Natural Science Foundation of China （Nos. 10975105, 11275136, 10975106, 11175126, 11204266 and 11075114） the National Magnetic Confinement Fusion Science Program of China （Nos. 2010GB106000, 2010GB106009）, the Open Project of State Key Laboratory of Functional Materials for Information and Qing Lan Project, a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and the Program for graduates Research ＆ Innovation in University of Jiangsu Province, China （No. CX10B-031Z）
文摘Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.
基金supported by National Natural Science Foundation of China (Nos. 10635010, 10775103)
文摘Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10635010 and 10775103)
文摘This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe measurements. Two major processes are considered in this model, electron-impact excitation and the spontaneous radiative decay. The diffusion loss term, which is found to be important for the two metastable states （4s[3/2]2, 4s＇[1/2]0）, is also taken into account. Behaviours of representative metastable and radiative states are discussed. Two emission lines （located at 696.5 nm and 750.4 nm） are selected and intensities are measured to obtain populated densities of the corresponding radiative states in the argon plasma. The calculated results agree well with that measured by Langmuir probe, indicating that the current model combined with optical emission spectroscopy is a candidate tool for electron density and temperature measurement in radio frequency capacitively coupled discharges.
