In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM simulations.The source-contacted MOS structure forms fewer depletion regions than ...In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM simulations.The source-contacted MOS structure forms fewer depletion regions than the PN junction.Therefore,the overlapping region between the gate and the drain can be significantly reduced while limiting RON degradation.As a result,the DG-MOSFET offers an improved high-frequency figure of merit(HF-FOM)over the conventional DMOSFET(C-MOSFET)and central-implant MOSFET(CI-MOSFET).The HF-FOM(RON×QGD)of the DG-MOSFET was improved by59.2%and 22.2%compared with those of the C-MOSFET and CI-MOSFET,respectively.In a double-pulse test,the DG-MOSFET could save total power losses of 53.4%and 5.51%,respectively.Moreover,in a power circuit simulation,the switching power loss was reduced by 61.9%and 12.7%in a buck converter and 61%and 9.6%in a boost converter.展开更多
基金supported by the MSIT(Ministry of Science and ICT),Korea,under the ITRC(Information Technology Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&Communications Technology Planning&Evaluation)。
文摘In this paper,a 4 H-Si C DMOSFET with a source-contacted dummy gate(DG-MOSFET)is proposed and analyzed through Sentaurus TCAD and PSIM simulations.The source-contacted MOS structure forms fewer depletion regions than the PN junction.Therefore,the overlapping region between the gate and the drain can be significantly reduced while limiting RON degradation.As a result,the DG-MOSFET offers an improved high-frequency figure of merit(HF-FOM)over the conventional DMOSFET(C-MOSFET)and central-implant MOSFET(CI-MOSFET).The HF-FOM(RON×QGD)of the DG-MOSFET was improved by59.2%and 22.2%compared with those of the C-MOSFET and CI-MOSFET,respectively.In a double-pulse test,the DG-MOSFET could save total power losses of 53.4%and 5.51%,respectively.Moreover,in a power circuit simulation,the switching power loss was reduced by 61.9%and 12.7%in a buck converter and 61%and 9.6%in a boost converter.
