Preparation and interface state of phosphate tailing-based geopolymers

The long-term storage of phosphate tailings will occupy a large amount of land,pollute soil and groundwater,thus,it is crucial to achieve the harmless disposal of phosphate tailings.In this study,high-performance geopolymers with compressive strength of 38.8 MPa were prepared by using phosphate tailings as the main raw material,fly ash as the active silicon-aluminum material,and water glass as the alkaline activator.The solid content of phosphate tailings and fly ash was 60% and 40%,respectively,and the water-cement ratio was 0.22.The results of XRD,FTIR,SEM-EDS and XPS show that the reactivity of phosphate tailings with alkaline activator is weak,and the silicon-aluminum material can react with alkaline activator to form zeolite and gel,and encapsulate/cover the phosphate tailings to form a dense phosphate tailings-based geopolymer.During the formation of geopolymers,part of the aluminum-oxygen tetrahedron replaced the silicon-oxygen tetrahedron,causing the polycondensation reaction between geopolymers and increasing the strength of geopolymers.The leaching toxicity test results show that the geopolymer has a good solid sealing effect on heavy metal ions.The preparation of geopolymer from phosphate tailings is an important way to alleviate the storage pressure and realize the resource utilization of phosphate tailings.

Topological edge and corner states of valley photonic crystals with zipper-like boundary conditions

We present a stable valley photonic crystal(VPC)unit cell with C_(3v)symmetric quasi-ring-shaped dielectric columns and realize its topological phase transition by breaking mirror symmetry.Based on this unit cell structure,topological edge states(TESs)and topological corner states(TCSs)are realized.We obtain a new type of wave transmission mode based on photonic crystal zipper-like boundaries and apply it to a beam splitter assembled from rectangular photonic crystals(PCs).The constructed beam splitter structure is compact and possesses frequency separation functions.In addition,we construct a box-shaped triangular PC structures with zipper-like boundaries and discover phenomena of TCSs in the corners,comparing its corner states with those formed by other boundaries.Based on this,we explore the regularities of the electric field patterns of TESs and TCSs,explain the connection between the characteristic frequencies and locality of TCSs,which helps better control photons and ensures low power consumption of the system.

Tunable topological edge state in plasma photonic crystals

In this study, we found a kind of edge state located at the interface between plasma photonic crystals(PPCs) and traditional photonic crystals, which depends on the property of the photonic band gap rather than the surface defect. Simulation and theoretical analysis show that by adjusting the plasma density, we can change the topological characteristics of the photonic band gap of PPCs. This makes it different from the photonic band gap of traditional PCs, and thus excites or closes the topological edge states. We further discussed the influence of plasma parameters on edge state characteristics, and the results showed that as the plasma density increased, the first photonic band gap(PBG) of the PPCs closed and then reopened, resulting in band inversion and a change in the PBG properties of the PPCs. We can control the generation of edge states through plasma and adjust the frequency and strength of the edge states. After the appearance of edge states, as the plasma density further increases, the first PBG of the PPCs will shift towards high frequencies and deepen. The frequency of edge states will shift towards higher frequencies, and their strength will also increase. We increased the first PBG depth of the PPCs by increasing the number of arrays and found that when the number of the PPCs arrays increased, only the intensity of the edge states would increase while the frequency remained unchanged. Therefore, flexible adjustment of edge state frequency and intensity can be achieved through plasma density and array quantity parameters. Our study demonstrates the properties of topological edge states in plasma photonic crystals, which we believe can provide some guidance for applications based on edge states.

Analyzing the surface passivity effect of germanium oxynitride:a comprehensive approach through first principles simulation and interface state density

High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.

Edge and lithium concentration effects on intercalation kinetics for graphite anodes

Graphite interfaces are an important part of the anode in lithium-ion batteries(LIBs),significantly influencing Li intercalation kinetics.Graphite anodes adopt different stacking sequences depending on the concentration of the intercalated Li ions.In this work,we performed first-principles calculations to comprehensively address the energetics and dynamics of Li intercalation and Li vacancy diffusion near the no n-basal edges of graphite,namely the armchair and zigzag-edges,at high Li concentration.We find that surface effects persist in stage-Ⅱ that bind Li strongly at the edge sites.However,the pronounced effect previously identified at the zigzag edge of pristine graphite is reduced in LiC_(12),penetrating only to the subsurface site,and eventually disappearing in LiC_(6).Consequently,the distinctive surface state at the zigzag edge significantly impacts and restrains the charging rate at the initial lithiation of graphite anodes,whilst diminishes with an increasing degree of lithiation.Longer diffusion time for Li hopping to the bulk site from either the zigzag edge or the armchair edge in LiC_(6) was observed during high state of charge due to charge repulsion.Effectively controlling Li occupation and diffusion kinetics at this stage is also crucial for enhancing the charge rate.

High-performance chiral all-optical OR logic gate based on topological edge states of valley photonic crystal

For all-optical communication and information processing,it is necessary to develop all-optical logic gates based on photonic structures that can directly perform logic operations.All-optical logic gates have been demonstrated based on conventional waveguides and interferometry,as well as photonic crystal structures.Nonetheless,any defects in those structures will introduce high scattering loss,which compromises the fidelity and contrast ratio of the information process.Based on the spin-valley locking effect that can achieve defect-immune unidirectional transmission of topological edge states in valley photonic crystals(VPCs),we propose a high-performance all-optical logic OR gate based on a VPC structure.By tuning the working bandwidth of the two input channels,we prevent interference between the two channels to achieve a stable and high-fidelity output.The transmittance of both channels is higher than 0.8,and a high contrast ratio of 28.8 dB is achieved.Moreover,the chirality of the logic gate originated from the spin-valley locking effect allows using different circularly polarized light as inputs,representing“1”or“0”,which is highly desired in quantum computing.The device’s footprint is 18μm×12μm,allowing high-density on-chip integration.In addition,this design can be experimentally fabricated using current nanofabrication techniques and will have potential applications in optical communication,information processing,and quantum computing.

Incomplete charge transfer in CMOS image sensor caused by Si/SiO_(2)interface states in the TG channel

CMOS image sensors produced by the existing CMOS manufacturing process usually have difficulty achieving complete charge transfer owing to the introduction of potential barriers or Si/SiO_(2)interface state traps in the charge transfer path,which reduces the charge transfer efficiency and image quality.Until now,scholars have only considered mechanisms that limit charge transfer from the perspectives of potential barriers and spill back effect under high illumination condition.However,the existing models have thus far ignored the charge transfer limitation due to Si/SiO_(2)interface state traps in the transfer gate channel,particularly under low illumination.Therefore,this paper proposes,for the first time,an analytical model for quantifying the incomplete charge transfer caused by Si/SiO_(2)interface state traps in the transfer gate channel under low illumination.This model can predict the variation rules of the number of untransferred charges and charge transfer efficiency when the trap energy level follows Gaussian distribution,exponential distribution and measured distribution.The model was verified with technology computer-aided design simulations,and the results showed that the simulation results exhibit the consistency with the proposed model.

Tunable topological interface states and resonance states of surface waves based on the shape memory alloy

Topological interface state(TIS)of elastic wave has attracted significant research interest due to its potential prospects in strengthening acoustic energy and enhancing the signal accuracy of damage identification and quantification.However,previous implementations on the interface modes of surface waves are limited to the non-adjustable frequency band and unalterable mode width.Here,we demonstrate the tunable TIS and topological resonance state(TRS)of Rayleigh wave by using a shape memory alloy(SMA)stubbed semi-infinite one-dimensional(1D)solid phononic crystals(PnCs),which simultaneously possesses the adjustable mode width.The mechanism of tunability stems from the phase transformation of the SMA between the martensite at low temperature and the austenite at high temperature.The tunable TIS of Rayleigh wave is realized by combining two bandgap-opened PnCs with different Zak phases.The TRS with adjustable mode width is achieved in the heterostructures by adding PnCs with Dirac point to the middle of two bandgap-opened PnCs with different Zak phases,which exhibits the extraordinary robustness in contrast to the ordinary Fabry–Perot resonance state.This research provides new possibilities for the highly adjustable Rayleigh wave manipulation and find promising applications such as tunable energy harvesters,wide-mode filters,and high-sensitivity Rayleigh wave detectors.

Helicity-dependent photoconductance of the edge states in the topological insulator Bi_(2)Te_(3)

The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi_(2)Te_(3)films is investigated.It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi_(2)Te_(3)film shows an opposite sign with that on the right edge.In addition,the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field,and it reverses the sign with the reversal of the electric field.As the thickness of the Bi_(2)Te_(3)film increases,the helicity-dependent photoconductivity current also increases.Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling(SOC)or the SOC introduced by the chiral impurities or defects.

Stress field near an interface edge of linear hardening materials

The elastic-plastic singular stress field near an interface edge of bounded linear hardening material is substantially as same as that of bonded elastic materials whose Young' s modulus and Poisson ratio are substituted by equivalent values, respectively. Further investigation by the elasto-plastic boundary element method (BEM) on the stress field near the interface edge showed that the stress field there can be divided into three regions: the domain region of the elastic-plastic singular stress field, the transitional region and the elastic region. The domain region of the elastic-plastic singular stress becomes larger with the increasing of the linear hardening coefficient. When the linear hardening coefficient decreases to a certain value, the effective stress in most of the yield zone equals approximately the yield stress. The stress distribution in the elastic region under small-scale yielding condition was also investigated.

Channel Lateral Pocket or Halo Region of NMOSFET Characterized by Interface State R G Current of the Forward Gated Diode

The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.

Origin of Luminescent Centers and Edge States in Low-Dimensional Lead Halide Perovskites:Controversies,Challenges and Instructive Approaches

With only a few deep-level defect states having a high formation energy and dominance of shallow carrier non-trapping defects,the defect-tolerant electronic and optical properties of lead halide perovskites have made them appealing materials for high-efficiency,low-cost,solar cells and light-emitting devices.As such,recent observations of apparently deep-level and highly luminescent states in low-dimensional perovskites have attracted enormous attention as well as intensive debates.The observed green emission in 2D CsPb2Br5 and 0 D Cs4PbBr6 poses an enigma over whether it is originated from intrinsic point defects or simply from highly luminescent CsPbBr3 nanocrystals embedded in the otherwise transparent wide band gap semiconductors.The nature of deep-level edge emission in 2D Ruddlesden–Popper perovskites is also not well understood.In this mini review,the experimental evidences that support the opposing interpretations are analyzed,and challenges and root causes forthe controversy are discussed.Shortcomings in the current density functional theory approaches to modeling of properties and intrinsic point defects in lead halide perovskites are also noted.Selected experimental approaches are suggested to better correlate property with structure of a material and help resolve the controversies.Understanding and identification of the origin of luminescent centers will help design and engineer perovskites for wide device applications.

Interface-induced topological phase and doping-modulated bandgap of two-dimensioanl graphene-like networks

Biphenylene is a new topological material that has attracted much attention recently.By amplifying its size of unit cell,we construct a series of planar structures as homogeneous carbon allotropes in the form of polyphenylene networks.We first use the low-energy effective model to prove the topological three periodicity for these allotropes.Then,through first-principles calculations,we show that the topological phase has the Dirac point.As the size of per unit cell increases,the influence of the quaternary rings decreases,leading to a reduction in the anisotropy of the system,and the Dirac cone undergoes a transition from type II to type I.We confirm that there are two kinds of non-trivial topological phases with gapless and gapped bulk dispersion.Furthermore,we add a built-in electric field to the gapless system by doping with B and N atoms,which opens a gap for the bulk dispersion.Finally,by manipulating the built-in electric field,the dispersion relations of the edge modes will be transformed into a linear type.These findings provide a hopeful approach for designing the topological carbon-based materials with controllable properties of edge states.

Stimulated photoluminescence emission and trap states in Si/SiO_2 interface formed by irradiation of laser

Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.

Two-dimensional analysis of the interface state effect on current gain for a 4H-SiC bipolar junction transistor

This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor （BJT）. Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.

Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi （111） bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi （111） ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi （111） bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy （STM/STS）, angle-resolved photoemission spectroscopy （ARPES）, and first principles calculations.

XPS Analysis of Surface and Interface States for PTC DA/ p-Si Heterojunction

The surface and interface of heterojunction (HJ) formed with organic semiconductor (3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)) and inorganic semiconductor p-Si were measured and analyzed by X-ray photoelectron spectroscopy (XPS).The results indicate that, in PTCDA molecule,the binding energy ( E b) of C is 284.6 eV and 288.3 eV, corresponding to C of the perylene and C of the anhydride, respectively, and the binding energy of O is 531.3 eV and 531.1 eV, corresponding to C of C=O in the anhydrides and C of C-O-C, respectively. Moreover, PTCDA lost its anhydrides and only its perylenes were left in the HJ interface.

Revealing the potential of apparent critical current density of Li/garnet interface with capacity perturbation strategy

Apparent critical current density(j_(Ac)^(a))of garnet all-solid-state lithium metal symmetric cells(ASSLSCs)is a fundamental parameter for designing all-solid-state lithium metal batteries.Nevertheless,how much the possible maximum apparent current density that a given ASSLSC system can endure and how to reveal this potential still require study.Herein,a capacity perturbation strategy aiming to better measure the possible maximum j_(Ac)^(a)is proposed for the first time.With garnet-based plane-surface structure ASSLSCs as an exemplification,the j_(Ac)^(a)is quite small when the capacity is dramatically large.Under a perturbed capacity of 0.001 mA h cm^(-2),the j_(Ac)^(a)is determined to be as high as 2.35 mA cm^(-2)at room temperature.This investigation demonstrates that the capacity perturbation strategy is a feasible strategy for measuring the possible maximum j_(Ac)^(a)of Li/solid electrolyte interface,and hopefully provides good references to explore the critical current density of other types of electrochemical systems.

Floquet bands and photon-induced topological edge states of graphene nanoribbons

Floquet theorem is widely used in the light-driven systems. But many 2 D-materials models under the radiation are investigated with the high-frequency approximation, which may not be suitable for the practical experiment. In this work,we employ the non-perturbative Floquet method to strictly investigate the photo-induced topological phase transitions and edge states properties of graphene nanoribbons under the light irradiation of different frequencies(including both low and high frequencies). By analyzing the Floquet energy bands of ribbon and bulk graphene, we find the cause of the phase transitions and its relation with edge states. Besides, we also find the size effect of the graphene nanoribbon on the band gap and edge states in the presence of the light.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.