The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.

Effects of Implant Copper Layer on Diamond Film Deposition on Cemented Carbides

The deposition of high-quality diamond films and their adhesion on cemented carbides are strongly influenced by the catalytic effect of cobalt under typical deposition conditions. Decreasing Co content on the surface of the cemented carbide is often used for the diamond film deposition. But the leaching of Co from the WC-Co substrate leading to a mechanical weak surface often causes a poor adhesion. In this paper we adopted an implant copper layer prepared by vaporization to improve the mechanical properties of the Co-leached substrate. The diamond films were grown by microwave plasma chemical vapor deposition from CH4:H2 gas mixture. The cross section and the morphology of the diamond film were characterized by scanning electron microscopy (SEM). The non-diamond content in the film was analyzed by Raman spectroscopy. The effects of pretreatment on the concentrations of Co and Cu near the interfacial region were examined by energy dispersive spectrum (EDS) equipped with SEM. The adhesion of the diamond on the substrate was evaluated with a Rockwell-type hardness tester. The results indicate that the diamond films prepared with implant copper layer have a good adhesion to the cemented carbide substrate due to the recovery of the mechanical properties of the Co-depleted substrate after the copper implantation and the formation of less amorphous carbon between the substrate and the diamond film.

Remote Sensing Study of Gold Biogeochemical Effects in the Western Guangdong-Hainan Region——A Case Study of the Hetai Gold Deposit

The vegetation has been poisoned by gold in the western Guangdong-Hainan region. The gold content ofthe leaves there is as high as 10-1961 times the abundance, the chlorophyll content is 10%-30% lower thanthat of the vegetation in metamorphic terrains and 10%-20% higher than that in granite terrains, and thecarotenoid content is 10%-44% lower than the background value. The water content of leaves is 10% to 20%lower than the background value. The cells of leaves are deformed and broken. The leaf surface shows colourspots and becomes yellow or dark green. The spectral reflectance of the leaf surface is 5%-30% higher than thebackground value: the spectral shape has shifted 5-15 nm to the short wavelength. The gray scales of eanopyon images of Landsat TM and airborne imaging scanner (AIS) are 10%-100% higher than the backgroundvalues. On Landsat TM and AIS false colour images, plants poisoned by gold display a yellow color, whichdisinguishes them from background plants. According to the spectral and image features of goldbiogeochemical effects, the author has constructed a gold information system and expert prediction system,and thus two gold target areas and two gold prospect areas have been identified rapidly, economically andaccurately in the western Guangdong-Hainan region which is extensively covered by vegetation.

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.

Synthesis and magnetotransport properties of Bi2Se3 nanowires

Bi2Se3, as a three-dimensional topological insulator, has attracted worldwide attention for its unique surface states which are protected by time-reversal symmetry. Here we report the synthesis and characterization of high-quality singlecrystalline Bi2Se3 nanowires. Bi2Se3 nanowires were synthesized by chemical vapor deposition（CVD） method via goldcatalyzed vapor-liquid-solid（VLS） mechanism. The structure and morphology were characterized by scanning electron microscopy（SEM）, transmission electron microscopy（TEM）, x-ray photoelectron spectroscopy（XPS）, and Raman spectroscopy. In magnetotransport measurements, the Aharonov–Bohm（AB） effect was observed in a nanowire-based nanodevice, suggesting the existence of surface states in Bi2Se3 nanowires.

Design of a high-voltage electrostatic ultrasonic atomization nozzle and its droplet adhesion effects on aeroponically cultivated plant roots

In the process of aeroponics cultivation,the atomizer is one of the most important influencing factors on the cultivation process.This study presented the design of an ultrasonic atomization nozzle using contact charging and a root droplet adhesion test rig.The purpose of this study was to reveal the relationship between the main operating parameters of the high-voltage electrostatic ultrasonic atomization nozzle and the atomization effect using droplet adhesion measurements.In this study,the ultrasonic effect of nozzle was achieved by using Laval tube,and the design of the key parameters for the high-voltage electrostatic ultrasonic atomization nozzle were inlet pressure,electrostatic voltage root core electrode material and spray distance;the droplet size variation and root adhesion patterns were obtained through experiments.The best operating parameters were analyzed by using the orthogonal test method,and the droplet deposition distribution of the root system at different scales was investigated in the atomization chamber.The test results revealed that when the root core electrode material was coppe and the nozzle working parameters were at 0.4 MPa of inlet pressure,at 1.75 m the spray distance,at 12 kV of the electrostatic voltage,the root system has the highest droplet adhesion.

A highly reversible dendrite-free Zn anode via spontaneous galvanic replacement reaction for advanced zinc-iodine batteries

Rechargeable aqueous zinc-iodine batteries have received extensive attention due to their inherent advantages such as low cost,flame retardancy and safety.To address the safety concern associated with Zn dendrites,tin functional layer is introduced to the Zn surface via a spontaneous galvanic replacement reaction.This provides rapid deposition kinetics,thereby achieving the uniform Zn plating/stripping with a low overpotential(13.9 mV)and good stability for over 900 h.Importantly,the coupling of the advanced Zn anode with iodine in Zn-I_(2)battery exhibits a high specific capacity of 196.4 mAh·g^(−1)with high capacity retention(90.7%).This work provides a reliable strategy to regulate the reversible redox of zinc for advanced rechargeable batteries.

Growth of Single-crystalline Transition Metal Dichalcogenides Monolayers with Large-size

Two-dimensional(2D)transition metal dichalcogenides(TMDCs)semiconductors,such as monolayers of molybdenum disulfide(MoS2)and tungsten disulfide(WS2)can potentially serve as ultrathin channel materials for building short channel field-eflect transistors(FETs)to further extend Moore's Law.It is essential to develop controllable approaches for the syntliesis of large single crystals of these 2D semiconductors to promote their practical applications in future electronics.In this short review,we summarized the recent advances on the chemical vapor deposition(CVD)of single crystalline semiconducting 2D TMDCs with a large size.We first discussed the driving force and urgent demands on developing controllable approaches for the growth oflarge 2D TMDCs single crystals and then summarized the current strategies and representative studies on the CVD growth of large 2D single crystals.Finally,we discussed the challenges and future directions in this topic.