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Neighbour Peer Selection Scheme Based on Effective Capacity for Mobile Peer-to-Peer Streaming
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作者 夏海轮 王宁 曾志民 《China Communications》 SCIE CSCD 2013年第5期89-98,共10页
For Peer-to-Peer (P2P) streaming services in mobile networks, the selection of appropriate neighbour peers from candidate peers with demanding data is an important approach to improve Quality-of-Service (QoS). This pa... For Peer-to-Peer (P2P) streaming services in mobile networks, the selection of appropriate neighbour peers from candidate peers with demanding data is an important approach to improve Quality-of-Service (QoS). This paper proposes a novel Effective Capacity Peer Selection (ECPS) scheme based on effective capacity. In the ECPS scheme, the neighbour peer selection problem was modeled using the Multiple Attribute Decision Making (MADM) theory, which considered multiple factors of candidate peers, including Signal to Interference and Noise Ratio (SINR), residency time, power level, security, moving speed, and effective capacity. This model could increase the suitability of ECPS for wireless mobile environments. Then, the Technique for Order Preference by Similarity to Ideal Solution (TOPSIS) was used to solve the MADM problem and identify the preferred neighbour peers. Simulation results show that the ECPS scheme can improve the network throughput, reduce packet delay by about 82%, and almost double the packet delivery ratio of the mobile P2P streaming service. 展开更多
关键词 P2P mobile P2P streaming peer selection effective capacity MADM QoS
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A 0.6 μm CMOS bandgap voltage reference circuit
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作者 梁帮立 王志功 +5 位作者 田俊 冯军 夏春晓 胡艳 张丽 熊明珍 《Journal of Southeast University(English Edition)》 EI CAS 2003年第3期221-224,共4页
On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating fro... On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V. 展开更多
关键词 CMOS mutual compensation mobility and threshold voltage temperature effects
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Reverse Direction Micellar Electrokinetic Capillary Chromatography, Hydrostatic Flow Injection and Diffusional Injection Analysis: An Experimental Work
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作者 Kiumars Ghowsi Hosein Ghowsi 《Journal of Chemistry and Chemical Engineering》 2014年第6期552-556,共5页
Separation was reported by Dunn, Hankins and Ghowsi for the case that ions incapillary electrophoresis move opposite to electroosmosis and ions move faster than flow finally they get separated and reach the detector. ... Separation was reported by Dunn, Hankins and Ghowsi for the case that ions incapillary electrophoresis move opposite to electroosmosis and ions move faster than flow finally they get separated and reach the detector. Similar mode for electrokinetic chromatography is reported for p-xylene and toluene separation, which is called reverse direction MECC (micellar electrokinetic capillary chromatography). The effect of injection time on separation in reverse direction micellar electrokinetic capillary chromatography is investigated. In this study, hydrostatic and diffusion injection were studied. 展开更多
关键词 Reverse direction MECC P-XYLENE TOLUENE hydrostatic injection diffusion injection effective mobility.
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Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors 被引量:1
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作者 胡光喜 王伶俐 +2 位作者 刘冉 汤庭鳌 仇志军 《Communications in Theoretical Physics》 SCIE CAS CSCD 2010年第10期763-767,共5页
As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for th... As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced. 展开更多
关键词 simiconductor devices quantum mechanical effects effective electron mobility
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Performance improvement in pentacene organic thin film transistors by inserting a C_(60) ultrathin layer
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作者 孙钦军 徐征 +2 位作者 赵谡玲 张福俊 高利岩 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期596-600,共5页
The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C6... The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V.s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V-s). It indicates that further reducing the contact resistance of OTFTs should be carried out. 展开更多
关键词 organic thin film transistors field effect mobility contact effect charge drift
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Seasonal Adjustment of China’s Monthly Data to Take into Account the Effect of Mobile Holidays
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作者 Song Yanfei 《Open Journal of Statistics》 2020年第4期706-718,共13页
Based on the X-13-ARIMA-SEATS model, aiming at the problem of mobile holidays in China’s economic data, this paper introduces a new method of seasonal adjustment based on the AICC criterion to objectively select the ... Based on the X-13-ARIMA-SEATS model, aiming at the problem of mobile holidays in China’s economic data, this paper introduces a new method of seasonal adjustment based on the AICC criterion to objectively select the parameters of dummy variables of mobile holidays. Taking the current total value of China’s import and export as an example, we expound</span><span style="font-family:""> </span><span style="font-family:Verdana;">a new method for seasonal adjustment of mobile holidays such as Spring Festival, Dragon Boat Festival and Mid-Autumn Festival. Finally, the model is used to predict the total value of China’s import and export in and out of the sample. The prediction results show that the relative error of the out of sample data is less than 5%. The new method has advantages in the processing of macroeconomic data. 展开更多
关键词 X-13-ARIMA-SEATS Seasonal Adjustment Mobile Holiday Effect
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“Hot Nano Spots” as an Interpretation of So-Called Non-Thermal Biological Mobile Phone Effects
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作者 Helmut Pfützner 《Journal of Electromagnetic Analysis and Applications》 2016年第3期62-69,共8页
Indications exist that mobile phones may cause non-specific biological effects. They are classified as being of implausible non-thermal nature due to low quantum energy and low specific absorption rate levels, even if... Indications exist that mobile phones may cause non-specific biological effects. They are classified as being of implausible non-thermal nature due to low quantum energy and low specific absorption rate levels, even if considering worst cases of "hot spots" of only millimeter size. The considerations of this paper demonstrate that classical theory of polarization offers a conventional interpretation for all three the existence of so far unclarified effects, their low reproducibility and their low intensity. The basis of this explanation is given by the assumption that hot spots contain even hotter “nano spots” on a molecular level according to well known mechanisms of γ-relaxation. In this paper, the concept is put for discussion assuming a heterogeneous system that consists of water molecules as well as larger-sized functional molecules. A consistent interpretation through temperature increase on the level of nanometer sized molecular compounds promises to favor interdisciplinary discussions with respect to safety regulations. 展开更多
关键词 Mobile Phone Effects Hot Spots Microwave Heating Dielectric Relaxation Non-Thermal Microwave Effects
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Design of the Mobile Phone Charging Device based on Human Motion Energy and Light Energy
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作者 Liang LV 《International Journal of Technology Management》 2015年第6期131-133,共3页
This paper designs a mechanical swing of placementing mobile phone, which is inspired by the mechanical watch automatic winding process. The use of the kinetic energy generated by human body motion drives the wheel sw... This paper designs a mechanical swing of placementing mobile phone, which is inspired by the mechanical watch automatic winding process. The use of the kinetic energy generated by human body motion drives the wheel swing and the generator, it can carry out mobile phone additional charge through the electronic components rectifier and DC/DC converter regulator, the use of human motion and light energy can extend a fixed charge mobile phone standby time. The human motion power uses electromagnetic coupling technique and collects energy by using foot swing, solar power generation uses DSP chip in TMS320F28927 control a plurality of charging circuit, inverter circuit and solar maximum power point tracking by sampling and multiple output PWM wave. Finally, charging process has the basic constant current process discovered by device testing, the design of human motion and light energy mobile phone charger can satisfy the need of mobile phone rechargeable lithium batteries. 展开更多
关键词 Human body kinetic energy Photovoltaic effect Mobile phone charging Inverter Mechanical balance Solar energy.
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The Effect of a Novel Cytokine,High Mobility Group Box 1 Protein,on the Development of Traumatic Sepsis 被引量:21
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作者 姚咏明 盛志勇 黄立峰 《Chinese Journal of Integrative Medicine》 SCIE CAS 2009年第1期13-15,共3页
Sepsis and subsequent multiple organ dysfunction syndrome(MODS) are frequent complications after severe traumata or burns involving a large area,and these remain as the two most common causes of morbidity and mortalit... Sepsis and subsequent multiple organ dysfunction syndrome(MODS) are frequent complications after severe traumata or burns involving a large area,and these remain as the two most common causes of morbidity and mortality in critical illnesses.Despite the recent rapid advances in intensive 展开更多
关键词 The Effect of a Novel Cytokine High mobility Group Box 1 Protein on the Development of Traumatic Sepsis than body
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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts
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作者 Alexandre Bucamp Christophe Coinon +4 位作者 David Troadec Sylvie Lepilliet Gilles Patriarche Xavier Wallart Ludovic Desplanque 《Nano Research》 SCIE EI CAS CSCD 2020年第1期61-66,共6页
Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nan... Three-dimensional(3D)nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport.In this context,Ⅲ-Ⅴ semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they provide.Among the main challenges involved in the processing of these nanodevices are(i)the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface,(ii)the ability to get good ohmic contacts for source and drain electrodes and(iii)the scalability and reliability of the process for the fabrication of complex architectures based on nanowire networks.In this paper,we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different issues.Electrical characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron mobility.Although comparable to the best reported values for In(Ga)As nanostructures grown on InP,this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime. 展开更多
关键词 molecular beam epitaxy core-shell nanowire selective area growth effective electron mobility
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