The electronic structures of coupled quantum dots grown on （11N）-oriented substrates are studied in the framework of effective-mass envelope-function theory. The results show that the all-hole subbands have the smal...The electronic structures of coupled quantum dots grown on （11N）-oriented substrates are studied in the framework of effective-mass envelope-function theory. The results show that the all-hole subbands have the smallest widths and the optical properties are best for the （113）, （114）, and （115） growth directions. Our theoretical results agree with the available experimental data. Our calculated results are useful for the application of coupled quantum dots in photoelectric devices.展开更多
A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for ＂shal...A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for ＂shallow＂ and ＂deep＂impurities and point defects. The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.展开更多
基金Project supported in part by the National Natural Science Foundation of China （Grant Nos 60521001 and 60325416）.
文摘The electronic structures of coupled quantum dots grown on （11N）-oriented substrates are studied in the framework of effective-mass envelope-function theory. The results show that the all-hole subbands have the smallest widths and the optical properties are best for the （113）, （114）, and （115） growth directions. Our theoretical results agree with the available experimental data. Our calculated results are useful for the application of coupled quantum dots in photoelectric devices.
基金supported by ARO/MURI (W911NF-101-0524 monitored by Dr. William Clark)ARO/Electronics (W911NF1610263 monitored by Dr. William Clark and Dr. Michele Gerhold)Bissell Distinguished Professorship at UNCC
文摘A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for ＂shallow＂ and ＂deep＂impurities and point defects. The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.
