mole fraction) yttria-stabilized zirconia electrolyte thin wall tubes were p repared by i mproved slip casting method. The length and wall thickness of the tubes are 266 mm and 0.4～0.9 mm, respectively and the relat...mole fraction) yttria-stabilized zirconia electrolyte thin wall tubes were p repared by i mproved slip casting method. The length and wall thickness of the tubes are 266 mm and 0.4～0.9 mm, respectively and the relative density is 96.7%. The microstr ucture and electrical properties of samples sintered at different temperatures w ere studied using SEM and ac impedance spectroscopy. The effect of sintered dens ity, grain and grain boundary on the electrical properties of the samples was analyzed. The research results show that the density of the samples increase s gradually with increasing sintering temperatures. The microstructure of sample s strongly influences its electrical properties, and the electrical properti es of samples enhance with the increase of sintered density. The ionic conductiv ity of grain and grain boundary is increased as the sintering temperature incre ases. Better sinterability of the samples was obtained at the sintering temperat ure of 1650 ℃. The maximum open circuit voltage and short circuit current for s ingle cell is 0.946 V and 1.84 A, respectively. The maximum output power of sing le cell is 0.46 W at the temperature of 850 ℃.展开更多
a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It...a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It was found that the growth temperature was a key parameter for optimized surface morphologyand crystalline quality of the Ga_zIn_1-Sb epilayers. The influence of growth temperature on the Ga solidcomposition was previously explained. The Ga solid composition was proportional to the Ga vapor compositionand vapor Ⅲ/V ratio, respectively . The Ga distribution as efficient was found to be 1. 22 under the optimizedgrowth parameters and decreased with decreasing growth temperature. The results of Hall measurements forGa.InSb alloys at room temperature show a P-type background doping. The hole mobility of the best samplewas 377 cm￣2/V s with a hole concentration of 7. 6 x 10￣16 cm￣(-3).展开更多
文摘mole fraction) yttria-stabilized zirconia electrolyte thin wall tubes were p repared by i mproved slip casting method. The length and wall thickness of the tubes are 266 mm and 0.4～0.9 mm, respectively and the relative density is 96.7%. The microstr ucture and electrical properties of samples sintered at different temperatures w ere studied using SEM and ac impedance spectroscopy. The effect of sintered dens ity, grain and grain boundary on the electrical properties of the samples was analyzed. The research results show that the density of the samples increase s gradually with increasing sintering temperatures. The microstructure of sample s strongly influences its electrical properties, and the electrical properti es of samples enhance with the increase of sintered density. The ionic conductiv ity of grain and grain boundary is increased as the sintering temperature incre ases. Better sinterability of the samples was obtained at the sintering temperat ure of 1650 ℃. The maximum open circuit voltage and short circuit current for s ingle cell is 0.946 V and 1.84 A, respectively. The maximum output power of sing le cell is 0.46 W at the temperature of 850 ℃.
文摘a.In-Sb alloys were grown on GaSb substrates by MOCVD at atmospheric pressure. TMGa, TMInand TMSb were used as reactants. Alloy solid competition , surface morphologies and electrical properties wereinvestigated. It was found that the growth temperature was a key parameter for optimized surface morphologyand crystalline quality of the Ga_zIn_1-Sb epilayers. The influence of growth temperature on the Ga solidcomposition was previously explained. The Ga solid composition was proportional to the Ga vapor compositionand vapor Ⅲ/V ratio, respectively . The Ga distribution as efficient was found to be 1. 22 under the optimizedgrowth parameters and decreased with decreasing growth temperature. The results of Hall measurements forGa.InSb alloys at room temperature show a P-type background doping. The hole mobility of the best samplewas 377 cm￣2/V s with a hole concentration of 7. 6 x 10￣16 cm￣(-3).
