Optical and Electrical Properties of ZnO/CdO Composite Thin Films Prepared by Pulse Laser Deposition

ZnO/CdO composite films with different CdO contents are obtained by pulse laser deposition technique. The structural, optical and electrical properties of the composite [liras are investigated by x-ray diffraction, photolu- minescence and electrical resistivity measurements, respectively. The results show that the UV emission is at a constant peak position in the photoluminescence spectra. Meanwhile, their electrical resistivity decreases to very low level approaching to the value of the CdO film, which can be explained by the Matthiessen composite rule for resistivity. The peculiarity of low resistivity and high transnlittance in the visible region enables these Rims suitable for optoelectronic device fabrication.

Mechanical Reinforcement and Piezoelectric Properties of PZT Ceramics Embedded with Nano-Crystalline

The double-scale lead zirconate titanate （PZT） piezoelectric ceramics were prepared by the solid state processing with PZT nano-crystalline and micro-powder. The microstructures, electrical and mechanical properties of the double-scale PZT are investigated. All the sintered ceramics exhibit a single perovskite structure and the grain size of the dou ble-scale PZT reduces due to the incorporation of PZT nano-crystalline. Compared to normal PZT, the mechanical properties increase significantly and the piezoelectric properties decrease slightly. Mechanisms responsible for the reinforcement of the double-scale PZT are discussed.

Influence of Radio-Frequecy Power on Structural and Electrical Properties of Sputtered Hafnium Dioxide Thin Films

Hafnium dioxide （HfO2） thin films are prepared by rf magnetron sputtering. The influences of rf power on the structure, chemical states and electrical properties of the thin films were investigated through x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage and leakage current density-voltage measurement and UV-VIS spectrophotometry. The results show that the HfO2 thin films have a mixed structure of amorphous and polycrystalline phases. With increasing rf power, the crystallinity is enhanced and the crystallite size of the thin films is increased. The oxidation of Hf atoms is improved with increasing rf power for the HfO2 thin films. The flat band shift, oxide charge density and leakage current density of the thin films all decrease as the rf power increases from 50 to 110 W, and then increase as the rf power is increased to 140 W. The band gap energy is smaller for the thin film deposited at 110 W.

Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.

Bending Loss Calculation of a Dielectric-Loaded Surface Plasmon Polariton Waveguide Structure

Based on full 3D finite element method simulations, the transmission of a dielectric-loaded surface plasmon polariton waveguide （DLSPPW） based 1/4 circle is calculated for a 90° bend model and a 270° bend model, respectively. It is found that the 270° bend model gives almost pure bending loss while the 90° bend model contains additional coupling loss. The models are applied to deduce the loss and unloaded quality factor of DLSPPW based waveguide ring resonators （WRRs） and the results of the 270° bend model agree well with direct simulating results of the WRRs. Thus the 270° bend model gives a fast and simple way to calculate bending loss and it is helpful for WRR design because no wavelength scan is needed.

Improvement in Dielectric Tunability of Ba0.6Sr0.4TiO4-Mg2TiO4 Composite Ceramics via Heterogeneous Nucleation Processing

Dielectric tunable composite ceramics Ba0.6Sr0.4 TiO4-Mg2 TiO4 （BST-MT） are prepared with a heterogeneous nucleation sol-gel approach. The Mg2 TiO4 powders are synthesized by the conventionM solid-state reaction method. The micro-sized MT powders with dispersant Ciba-4010 are introduced into Ba-Sr-Ti sol to obtain uniform and homogeneous mixture compounds with nano-sized BST particles synthesized via heterogeneous nucleation （HN） in the sol-gel process. Thus, the mierostructural and dielectric properties can be tailored. The dielectric constants of BST-MT composite ceramics can be adjusted in a larg＇e range from 294 to 1790, and the dielectric tunability can be adjusted from 29.4% to 37.0% with different MT contents from 60wt% to 20wt%. Compared to the samples prepared by the conventional solid-state （SS） process, the BST-MT composite ceramics by the heterogeneous nucleation sol-gel process exhibit a more uniform microstructure, and improve dielectric properties.

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition （MOCVD） technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap （7. 7eV） and high dielectric constant （9.8）. The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively.

Experimental Verification of Left-Handed Metamaterials Composed of Coplanar Electric and Magnetic Resonators

We verified experimentally left-handed metamaterials （LHM） composed of coplanar electric and magnetic resonators. A typical LHM sample composed of coplanar resonator unit cells was fabricated, investigated and tested. The experimental results show that the tested sample has a left-handed band of width 1.4 GHz in the X band. The experimental results agree quite well with the simulation ones. Moreover, both the simulation and experimental results show that the LHM under study can automatically achieve good impedance-matching in the left-handed band.

Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings

We present a comprehensive experimental study of terahertz （THz） wave propagation utilizing surface plasmon polaritons （SPPs） on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices.

Phase Transition Behavior of LiCr 0.35 Mn0.65O2 under High Pressure by Electrical Conductivity Measurement

The electrical conductivity of powdered LiCr 0.35 Mn0.65O2 is measured under high pressure up to 26.22 GPa in the temperature range 300-413 K by using a diamond anvil cell. It is found that both conductivity and activation enthalpy change discontinuously at 5.36 GPa and 21.66 GPa. In the pressure range 1.10-5.36 GPa, pressure increases the activation enthalpy and reduces the carrier scattering, which finally leads to the conductivity increase. In the pressure ranges 6.32-21.66 GPa and 22.60-26.22 GPa, the activation enthalpy decreases with pressure increasing, which has a positive contribution to electrical conductivity increase. Two pressure-induced structural phase transitions are found by in-situ x-ray diffraction under high pressure, which results in the discontinuous changes of conductivity and activation enthalpy.

Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films

The effect of annealing on the microstructure and electrical characteristics of poly （3-hexylthiophene） （P3HT） films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4-TCNQ） is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped fihns under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4-TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.

First-principles Study of Single Tin-phthalocyanine Molecule on Ag（111） Surface

Adsorption behavior and electronic structure of tin-phthalocyanine (SnPc) on Ag(111) surface with Sn-up and Sn-down conformations are investigated using first-principles calculations. Two predicted adsorption configurations agree well with the experimentally determined structures. SnPc molecule energetically prefers to adsorb on Ag(111) surface with Sn-down conformation. The energy required to move the central Sn atom through the frame of a phthalocyanine molecule, switching from the Sn-up to Sn-down conformation, is about 1.68 eV. The simulated scanning tunneling microscopy images reproduce the main features of experimental observations. Moreover, the experimentally proposed hole attachment mechanism is verified based on the calculated density of states of SnPc on Ag(111) with three different adsorption configurations.

First-Principles Study of Structural Stabilities, Electronic and Optical Properties of SrF2 under High Pressure

An investigation of structural stabilities, electronic and optical properties of SrF2 under high pressure is conducted using a first-principles calculation based on density functional theory （DFT） with the plane wave basis set as implemented in the CASTEP code. Our results predict that the second high-pressure phase of SrF2 is of a Ni2In- type structure, and demonstrate that the sequence of the pressure-induced phase transition of SrF2 is the fluorite structure （Fm3m） to the PbC12-type structure （Pnma）, and to the Ni2In-type phase （P63/mmc）. The first and second phase transition pressures are 5. 77 and 45.58 GPa, respectively. The energy gap increases initially with pressure in the Fm3m, and begins to decrease in the Pnma phases at 30 GPa. The band gap overlap metallization does not occur up to 210 GPa. The pressure effect on the optical properties is discussed.

Dual-Band Terahertz Left-Handed Metamaterial with Fishnet Structure

We present the design of a dual-band left-handed metamaterial with fishnet structure in the terahertz regime. Its left-handed properties are described by the retrieved effective electromagnetic parameters. We introduce an equivalent circuit which offers a theoretical explanation for the left-handed behavior of the dual-band fishnet metamaterial, and investigate its losses receiving- higher figure of mcrit, The design is beneficial to the development of frequency agile and broadband THz materials and devices＇. The dual-band fishnet metamaterial can be extended to infrared and optical frequency ranges by regulating the structural parameters.

Phase-Transition and Magnetic Moment of the Gd3＋ Ion in the Gd2Fe17 Compound

The structure and magnetic phase transitions of the Gd2Fe17 compound are investigated by using a differential thermal/thermogravimetric analyzer, x-ray diffraction, and magnetization measurements. The result shows that there are two phase structures for the Gd2Fe17 compound： the hexagonal Th2Nilr-type structure at high temperatures （above 1243℃）, and the rhombohedral Th2Zn17-type structure, respectively. A method to measure the magnetic moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound is presented. The moments of the Gd-sublattice and the Fe-sublattice in the Gd2Fe17 compound from 77 to 500 K are measured in this way with a vibrating sample magnetometer. A detailed discussion is presented.

Existence of Shear Horizontal Surface Waves in a Magneto-Electro-Elastic Material

The existence of shear horizontal surface waves in a magneto-electro-elastic （MEE） half-space with hexagonal （6mm） symmetry is investigated. The surface of the MEE half-space is mechanically free, but subjected to four types of electromagnetic boundary conditions. These boundary conditions are electrically open/magnetically closed, electrically open/magnetically open, electrically closed/magnetically open and electrically closed/magnetically dosed. It is shown that except for the electrically open/magnetically closed condition, the three other sets of electromagnetic boundary conditions allow the propagation of shear horizontal surface waves.

Bipolar Resistance Switching Characteristics of ZnO/Nb-Doped SrTiO3 Heterojunctions

An electrical pulse induced resistance switching effect in ZnO/Nb-doped SrTiO3 heterojunctions is reported. The current-voltage curves of these junctions show hysteresis. Multi-resistance states are realized by applying voltage pulses with different amplitudes, and the resistance switching effect is more remarkable at low temperatures. The junction capacitance decreases dramatically with increasing frequency. Analysis of the results suggests that the trapping-detrapping process plays an important role in the resistance switching effect.

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

We report on the growth and fabrication of deep ultraviolet （DUV） light emitting diodes （LEDs） on an AIN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.

Simulation of Light Intensification Induced by Defects of Polished Fused Silica

Light intensity distribution in the vicinity of inclusions and etched cracks in polished fused silica at wavelength scale are simulated by using the finite-difference time-domain algorithm. Light intensity enhancement factor as functions of diameter and refractive index of inclusions are investigated, more than 10 times that of incident beam is obtained in the simulation. We model the etched crack in close proximity to a real structure, which is characterized by AFM. We find that the peak light intensity of the crack is a function of its cross sectional breadth depth ratio, providing good hints for the effective processing of fused silica samples to improve the damage threshold.

An Improved Method of Designing Isotropic Multilayered Spherical Cloak for Electromagnetic Invisibility

The classic anisotropic spherical cloak can be mimicked by many alternating thin layers of isotropic metamaterials [Qiu et al. Phys. Rev. E 79 （2009） 047602]. We propose an improved method of designing permittivity and permeability in each isotropic layer, which eliminates the jumping of the refractive index at the interface. Multilayered spherical cloaks designed by the present method perform much better than those by Qiu et al., especially for forward scattering. It is found that the ratio of layer thickness to the operating wavelength plays an important role in achieving invisibility. The presented cloak should be discretized to at least 40 layers to meet the thickness threshold corresponding to 10% scattering.