Electrically controllable spin filtering in zigzag phosphorene nanoribbon based normal–antiferromagnet–normal junctions

We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon(ZPNR) based normal–antiferromagnet–normal junction. Two ferromagnets are closely coupled to the edges of the nanoribbon and form the edge-to-edge antiferromagnetism. Under an in-plane electric field, the two degenerate edge bands of the edge-to-edge antiferromagnet split into four spin-polarized sub-bands and a 100% spin-polarized current can be easily induced with the maximal conductance 2e~2/h. The spin polarization changes with the strength of the electric field and the exchange field,and changes sign at opposite electric fields. The spin-polarized current switches from one edge to the other by reversing the direction of the electric field. The edge current can also be controlled spatially by changing the electric potential of the scattering region. The manipulation of edge current is useful in spin-transfer-torque magnetic random-access memory and provides a practical way to develop controllable spintronic devices.

Coordinated Voltage Control of Distribution Network ConsideringMultiple Types of Electric Vehicles

The couple between the power network and the transportation network(TN)is deepening gradually with the increasing penetration rate of electric vehicles(EV),which also poses a great challenge to the traditional voltage control scheme.In this paper,we propose a coordinated voltage control strategy for the active distribution networks considering multiple types of EV.In the first stage,the action of on-load tap changer and capacitor banks,etc.,are determined by optimal power flow calculation,and the node electricity price is also determined based on dynamic time-of-use tariff mechanism.In the second stage,multiple operating scenarios of multiple types of EVs such as cabs,private cars and buses are considered,and the scheduling results of each EV are solved by building an optimization model based on constraints such as queuing theory,Floyd-Warshall algorithm and traffic flow information.In the third stage,the output power of photovoltaic and energy storage systems is fine-tuned in the normal control mode.The charging power of EVs is also regulated in the emergency control mode to reduce the voltage deviation,and the amount of regulation is calculated based on the fair voltage control mode of EVs.Finally,we test the modified IEEE 33-bus distribution system coupled with the 24-bus Beijing TN.The simulation results show that the proposed scheme can mitigate voltage violations well.

Ultrahigh thermoelectric properties of p‐type Bi_(x)Sb_(2−x)Te_(3)thin films with exceptional flexibility for wearable energy harvesting

Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3)thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3)flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3)and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.

Structure, Electrical and Oxygen Transport Properties of Fe-Doped SrCoO3-δ Perovskites

The structure-property relationship of Fe-doped SrCoO3-δ was studied. With increase of Fe content in SrCol-xFexO3-δ from x=0 to x=0.2, the phase composition changed pro- gressively in the order of hexagonal→brownmillerite （main）＋hexagonal→cubic （main）＋ brownmillerite→single cubic phase. Transition between the hexagonal/brownmillerite phase and the cubic phase took place with variation of the operating conditions, and was associated with remarkable changes in the electrical conductivity and oxygen permeation flux.

Research and development of electric vehicles for clean transportation

This article presents the research and development of an electric vehicle（EV） in Department of Human-Robotics Saitama Institute of Technology,Japan.Electric mobile systems developed in our laboratory include a converted electric automobile,electric wheelchair and personal mobile robot.These mobile systems contribute to realize clean transportation since energy sources and devices from all vehicles,i.e.,batteries and electric motors,does not deteriorate the environment.To drive motors for vehicle traveling,robotic technologies were applied.

Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system

The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.

Electric transport properties and temperature stability of magnetoresistance of composite system between La_(8/9)Sr_(1/45)Na_(4/45)MnO_3 and Sb_2O_3

The samples ofLa8/9Sr1/45Na4/45MnO3 （LSNMO）/x/2（Sb2O3） were prepared by the solid-state reaction method. The electric transport properties and the temperature stabil-ity of magnetoresistance （MR） of the samples were studied through the measurements of X-ray diffraction patterns, resistivity-temperature （ρ-T） curves, mass magnetization-temperature （σ-T） curves, and magnetoresistance-temper-ature （MR-T） curves. The results indicate that the p-Tcurves of the original material LSNMO show two peaks, and the phenomenon of two peaks of ρ-T curves disappears for the composite samples, which can be explained by a competition between surface-phase resistivity induced by boundary-dependent scattering and body-phase resistivity induced by paramagnetism-ferromagnetism transition. For all the sam-ples in the low temperature range, MR increases continu-ously with the decrease of temperature, which shows a characteristic of low-field magnetoresistance. However, MR basically keeps the same in the high temperature range. The paramagnetism-ferromagnetism transition is observed in the high temperature range due to a composite between perov-skite manganite and insulator, which can enhance the tem-perature of MR appearance in the high temperature range and make it to appear near room temperature. For the sample with x = 0.12, MR remains constant at the value of 7.5 % in the temperature range of 300-260 K, which achieves a tem-perature stability of MR near room temperature. In addition,for the sample with x = 0.16, MR is above 6.8 % in the high temperature range of 318-252 K （△T = 66 K）. MR almost remains constant in this temperature range, which favors the practical application of MR.

Void Fraction Measurement in Oil-Gas Transportation Pipeline Using an Improved Electrical Capacitance Tomography System

To measure the void fraction online in oil-gas pipeline, an improved electrical capacitance tomography (ECT) system has been designed. The capacitance sensor with new structure has twelve internal electrodes and overcomes the influence of the pipe wall. The data collection system is improved by using high performance IC (integrated circuit). Static tests of bubble flow, stratified flow and annular flow regime are carried out. Measurements are taken on bubble flow, stratified flow and slug flow. Results show that the new ECT system performs well on void fraction measurement of bubble flow and stratified flow, but the error of measurement for slug flow is more than 10%.

Conducting Polyaniline-Electrical Charge Transportation

Conductive polyanilines are synthesized by doping with inorganic and organic acids, namely Hydrochloric acid (HCl) and ±10-camphor sulfonic acid (CSA). The direct current (DC) conductivities (σDC) are found to be about 9.5 ′ 10-8, 1.8, and 95.8 S/cm for PANI base, PANI(HCl) and PANI(CSA), respectively. σDC is measured down to a temperature of ~100 K and the apparent change in the activation energies are found to be 98.16, 74.40, and 57.24 meV for PANI base, HCl, and CSA dopings respectively. σDC is less temperature dependent near room temperature, further decrease in temperature the σDC is strongly dependent. Upon the inspection of AC conductivities (σAC) versus frequency curves, it can be inferred that the conduction process is noticeably influenced upon doping and within the dopants. σAC has shown classical plateau (DC-AC crossover) region, nonetheless shifted crossover frequency (critical frequency) upon doping is rather interesting. Critical frequencies (wc) are obtained from universal power-law for all samples. The variation in the dielectric properties can be attributed to the dopant incorporation. In material characterization, successful doping is corroborated by FTIR, UV-vis spectroscopy and slight influence upon doping can also be seen in thermal properties. Intense photoluminescence (PL) peaks at 322.5, 581.4 and 644.2 nm are observed. PANI(CSA) exhibited highest peak intensity followed by PANI(HCl) and PANI base.

Electronic properties of 2D materials and their junctions

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP_(2)

We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP_(2) adopts a monoclinic structure with the cell parameters a=5.7347(10)A,b=5.7804(11)A,and c=5.8222(11)A,space group P2_(1)/c(No.14).The electrical resistivityρ(T)measurements indicate that RhP_(2) exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP_(2) has a high mobilityμ_(e)~210 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_(e)~3.3×10^(18)cm^(3) at 300 K with a narrow-bandgap feature.The high mobilityμ_(e) reaches the maximum of approximately 340 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_^(e)~2×10^(18)cm^(-3)at 100 K.No magnetic phase transitions are observed from the susceptibilityχ(T)and specific heat C_(p)(T)measurements of RhP_(2).Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Efficient Metal Recovery from Industrial Wastewater:Potential Oscillation and Turbulence Mode for Electrochemical System

Efficient metal recovery from industrial wastewater facilitates addressing of the environmental hazards and resource requirements of heavy metals.The conventional electrodeposition recovery method is hampered by the limitations of interfacial ion transport in charge-transfer reactions,creating challenges for simultaneous rapid and high-quality metal recovery.Therefore,we proposed integrating a transient electric field(TE)and swirling flow(SF)to synchronously enhance bulk mass transfer and promote interfacial ion transport.We investigated the effects of the operation mode,transient frequency,and flow rate on metal recovery,enabling determination of the optimal operating conditions for rapid and efficient sequential recovery of Cu in TE&SF mode.These conditions included low and high electric levels of 0 and 4 V,a 50%duty cycle,1 kHz frequency,and 400 L·h^(-1)flow rate.The kinetic coefficients of TE&SF electrodeposition were 3.5-4.3 and 1.37-1.97 times that of single TE and SF electrodeposition,respectively.Simulating the deposition process under TE and SF conditions confirmed the efficient concurrence of interfacial ion transport and charge transfer under TE and SF synergy,which achieved rapid and highquality metal recovery.Therefore,the combined deposition strategy is considered an effective technique for reducing metal pollution and promoting resource recycling.

Low-energy(40 keV) proton irradiation of YBa_2Cu_3O_(7-x) thin films:Micro-Raman characterization and electrical transport properties

To investigate the damage profiles of high-fluence low-energy proton irradiation on superconducting materials and related devices, Raman characterization and electrical transport measurement of 40-keV-proton irradiated YBa_2Cu_3O_(7-x)(YBCO) thin films are carried out. From micro-Raman spectroscopy and x-ray diffraction studies, the main component of proton-radiation-induced defects is found to be the partial transition of superconducting orthorhombic phase to the semiconducting tetragonal phase and non-superconducting secondary phase. The results indicate that the defects induced in the conducting CuO_2 planes, such as increased oxygen vacancies and interstitials, can result in an increase in the resistivity but a decrease in the transition temperature TCwith the increase in the fluence of proton irradiation, which is confirmed in the electrical transport measurements. Especially, zero-resistance temperature TC_0 is not observed at a fluence of 10^(15)p/cm^2.Furthermore, the variation of activation energy U_0 can be explained by the plastic-flux creep theory, which indicates that the plastic deformation and entanglement of vortices in a weakly pinned vortex liquid are caused by disorders of point-like defects. Point-like disorders are demonstrated to be the main contribution to the low-energy proton radiation damage in YBCO thin films. These disorders are likely to cause flux creep by thermally assisted flux flow, which may increase noise and reduce the precision of superconducting devices.

In situ electrical transport measurement of superconductive ultrathin films

The discovery of an extraordinarily superconductive large energy gap in SrTiO3 supported single-layer FeSe films has recently initiated a great deal of research interests in surface-enhanced superconductivity and superconductive ultrathin films fabricated on crystal surfaces. On account of the instability of ultra-thin films in air, it is desirable to perform elec- trical transport measurement in ultra-high vaccum （UHV）. Here we review the experimental techniques of in situ electrical transport measurement and their applications on superconductive ultrathin films.

High pressure electrical transport behavior in SrF_2 nanoplates

The charge transport behavior of strontium fluoride nanocrystals has been investigated by in situ impedance measurement up to 35 GPa.It was found that the parameters changed discontinuously at each phase transition.The charge carriers in SrF2nanocrystals include both F~-ions and electrons.In the Fm3 m phase,pressure makes the electronic transport easier,while makes it more difficult in the Pnma phase.The defects at grain boundaries dominate the electronic transport process.Pressure could make the charge-discharge processes in the Fm3 m phase much easier,but make it more difficult in the Pnma phase.

Structural and electrical transport properties of Dirac-like semimetal PdSn4 under high pressure

We conducted in-situ high-pressure synchrotron x-ray diffraction(XRD) and electrical transport measurements on Dirac-like semimetal Pd Sn4 in diamond anvil cells with quasi-hydrostatic pressure condition up to 44.5 GPa–52.0 GPa. The XRD data show that the ambient orthorhombic phase(Ccca) is stable with pressures to 44.5 GPa, and the lattice parameters and unit-cell volume decrease monotonously upon compression. The temperature dependence of the resistance exhibits a metallic conduction and follows a Fermi-liquid behavior below 50 K, both of which keep unchanged upon compression to 52.0 GPa. The magnetoresistance curve at 5 K maintains a linear feature in a magnetic field range of 2.5 T–7 T with increasing pressure to 20.0 GPa. Our results may provide pressure-transport constraints on the robustness of the Dirac fermions.

Electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo_(1-x)Ni_xO_3 (0 ≤ x ≤ 0.07) prepared by sol-gel process

Electrical transport and thermoelectric properties of Ni-doped YCOl-xNixO3 （0 ≤ x ≤0.07）, prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo 1-xNixO3 decrease, but carder concentration increases. The temperature dependences of the resistivity for YCOl-xNixO3 are found to follow a relation of lnp o, lIT in a low-temperature range （LTR） （T 〈- 304 K for x = 0; - 230 K 〈 T 〈- 500 K for x = 0.02, 0.05, and 0.07） and high-temperature range （HTR） （T 〉-655 K for all compounds）, respectively. The estimated apparent activation energies for conduction Eal in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures （T 〈-230 K）, Mott＇s law is observed for YCOl-xNixO3 （x≥ 0.02）, indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCOl-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.0203, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.

Electrical transport properties of YCo_(1-x)Mn_xO_3(0 ≤x≤ 0.2)prepared by sol–gel process

Mn substitution compounds YCOl-xMnxO3 （0 ≤ x ≤ 0.2） are synthesized by using the sol-gel process. Electrical transport properties of YCo1-xMnxO3 are investigated in the temperature range from 200 K to 780 K. The experimental results show that after Mn substitution the electrical resistivity of YCo1-xMnxO3 first increases, then decreases, which is due to the electrons introduced by Mn doping. The sign of Seebeck coefficient for YCo1-xMnxO3 （x ≠ 0） is positive or negative, which is also proved by the Hall coefficient measurement. Moreover, at about room temperature, the Seebeck coefficient of YCO1-xMnxO3 with 1% doping Mn content becomes a negative value, whose absolute value is maximum; furthermore, the absolute value gradually decreases with increasing the Mn substitution content, which can be explained by the double carder model.

Preparation and Electrical Transport Properties of Perovskite Oxide Ln0.5Sr0.5CoO3

The superfine powders of Ln0.5 Sr0.5 CoO3 （Ln = La, Pr, Nd, Sm, Eu） were obtained by solid state reactions. The crystal structure and electrical transport properties of samples doped with different rare earth elements as well as the forming process of the Perovskite structure were studied. The result shows that when the temperature reaches 1200 ℃, the samples will become a steady and unitary Perovskite phase by solid state reactions. The conductive behavor at low temperature is consistent with small polaron mechanism （i. e., localized electronic carriers having a thermally activated mobility）. However, the maximum of conductivity appears at about 700 ℃, and the conductivity of La0.5Sr0.5CoO3 is the biggest in the intermediate-temperature （600 - 850 ℃ ）, so it is fit for cathode material of intermediate-temperature solid oxide fuel cells.

Anisotropic Transport on Monolayer and Multilayer Phosphorene in the Presence of an Electric Field

We demonstrate theoretically the anisotropic quantum transport of electrons through an electric field on monolayer and multilayer phosphorene. Using the long-wavelength Hamiltonian with continuum approximation, we find that the transmission probability for transport through an electric field is an oscillating function of incident angle, electric field intensity, as well as the incident energy of electrons. By tuning the electric field intensity and incident angle, the channels can be transited from opaque to transparent. The conductance through the quantum waveguides depends sensitively on the transport direction because of the anisotropic effective mass, and the anisotropy of the conductance can be tuned by the electric field intensity and the number of layers. These behaviors provide us an efficient way to control the transport of phosphorene-based microstructures.