Oscillation of Dzyaloshinskii–Moriya interaction driven by weak electric fields

Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.

Effect of electric field on the electronic spectrum and the persistent current of a quantum ring with two electrons

The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

Tuning the phase separation in La_(0.325)Pr_(0.3)Ca_(0.375)MnO_3 using the electric double-layer field effect

Electric double-layer field effect experiments were performed on ultrathin films of La0.325Pr0.3Ca0.375MnO3, which is noted for its micrometer-scale phase separation. A clear change of resistance up to 220% was observed and the characteristic metal-insulator transition temperature Tp was also shifted. The changes of both the resistance and Tp, suggest that the electric field induced not only tuning of the carrier density but also rebalancing of the phase separation states. The change of the charge-ordered insulating phase fraction was estimated to be temperature dependent, and a maximum of 16% was achieved in the phase separation regime. This tuning effect was partially irreversible, which might be due to an oxygen vacancy migration that is driven by the huge applied electric field.

Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology

The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.

Crystalline Electric Field Scheme of CeRh_2 Ga

The crystalline electric field (CEF) scheme of rare earth compound CeRh_2Ga was obtained by means of fitting the temperature dependence of inverse magnetic susceptibility. The CEF analysis shows that this compound has a doublet ground state. The first and second excited CEF doublet levels are estimated to be about 56 and 937 K, respectively. The calculated results are in good agreement with experimental data.

Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components

The air breakdown is easily caused by the high-power microwave, which can have two mutually orthogonal and heterophase electric field components. For this case, the electron momentum conservation equation is employed to deduce the electric field power and effective electric field for heating electrons. Then the formula of the electric field power is introduced into the global model to simulate the air breakdown. The breakdown prediction from the global model agrees well with the experimental data. Simulation results show that the electron temperature is sensitive to the phase difference between the two electron field components, while the latter can affect obviously the growth of the electron density at low electron temperature amplitudes. The ionization of nitrogen and oxygen induces the growth of electron density, and the density loss due to the dissociative attachment and dissociative recombination is obvious only at low electron temperatures.

CALCULATION AND EXPERIMENTAL INVESTIGATION OF ELECTRIC FIELDS INDUCED BY ELECTRODES IN ELECTROSTATIC CHARGED POWDER SPRAYING TECHNIQUE

Electric fields induced by ring and pin electrodes in electrostatic charged powder sprayingtechnique are analysed. The fundamental formulae to deseribe these fields have been built up. Theseformulae could be used to design electrostatic charged podwer spraying system. The chargingeffectiveness of ring and pin electrode is experimentally investigated and compared each other. Theperformance of ring electrode is better than that of pin electrode.

Non-Kramers doublet ground state in a quaternary cubic compound PrRu_(2)In_(2)Zn_(18) investigated by ultrasonic measurements

We performed ultrasonic measurements on a quaternary cubic compound PrRu_(2)In_(2)Zn_(18) to explore the ground state properties derived from non-Kramers Γ_(3) doublet of Pr^(3+).PrRu_(2)In_(2)Zn_(18) is a quaternary derivative of the ternary compound PrRu_(2)Zn_(20) that exhibits a structural phase transition at T_S=138 K.In PrRu_(2)In_(2)Zn_(18),the Zn atoms at the 16c site in PrRu_(2)Zn_(20) are selectively replaced by In atoms.A monotonic increase was observed in the temperature dependence of elastic constants C_L=(C_(11)+2C_(12)+4C_(44))/3 and C_(T)=(C_(11)-C_(12)+C_(44))/3 in the temperature range around T_(S) to which an elastic softening was observed in(C_(11)-C_(12))/2 for PrRu_(2)Zn_(20).The disappearance of the softening indicates that the structural transition in PrRu_(2)Zn_(20) is suppressed by the substitution of Zn ions by In ones with a larger ionic radius.Alternatively,the C_(T) of PrRu_(2)In_(2)Zn_(18) exhibits a precursor Curie-type elastic softening toward low temperatures being responsible for the non-Kramers Γ_(3) ground state.We discuss the ground state and the evolution of the elastic properties of the different single-crystal samples of PrRu_(2)In_(2)Zn_(18) grown under different conditions.

Saturation effects on Ba 6phi （l=0, 2） and 6pnk （｜M｜= 0, 1） autoionization spectra

Using a three-step laser saturation excitation technique, the saturation effects on the Ba 6pns （J = 1） and 6pad （J = 1, 3） autoionization spectra are observed systemically in zero field. These saturation spectra are introduced to determine the high n members of 6pnl （l = 0, 2） autoionizing series and are used to analyse the channel interactions among the autoionizing series in zero field. Furthermore, the saturation excitation technique is applied to the electric field case, in which the saturation spectra of Ba 6pnk （｜M｜= 0, 1） autoionizing Stark states are measured. Most of these saturation spectra are observed for the first time so far as we know, which indicate the mixing of the autoionizing states in the electric fields.

Biogenic volatile organic compound analyses by PTR-TOF-MS: Calibration, humidity effect and reduced electric field dependency

Green leaf volatiles（GLVs） emitted by plants after stress or damage induction are a major part of biogenic volatile organic compounds（BVOCs）. Proton transfer reaction time-of-flight mass spectrometry（PTR-TOF-MS） is a high-resolution and sensitive technique for in situ GLV analyses, while its performance is dramatically influenced by humidity, electric field,etc. In this study the influence of gas humidity and the effect of reduced field（E/N） were examined in addition to measuring calibration curves for the GLVs. Calibration curves measured for seven of the GLVs in dry air were linear, with sensitivities ranging from 5 to10 ncps/ppbv（normalized counts per second/parts per billion by volume）. The sensitivities for most GLV analyses were found to increase by between 20% and 35% when the humidity of the sample gas was raised from 0% to 70% relative humidity（RH） at 21°C, with the exception of（E）-2-hexenol. Product ion branching ratios were also affected by humidity,with the relative abundance of the protonated molecular ions and higher mass fragment ions increasing with humidity. The effect of reduced field（E/N） on the fragmentation of GLVs was examined in the drift tube of the PTR-TOF-MS. The structurally similar GLVs are acutely susceptible to fragmentation following ionization and the fragmentation patterns are highly dependent on E/N. Overall the measured fragmentation patterns contain sufficient information to permit at least partial separation and identification of the isomeric GLVs by looking at differences in their fragmentation patterns at high and low E/N.

Electrical-field induced nonlinear conductive behavior in dense zirconia ceramic

The effect of the applied electric field on the conductive behavior of zirconia ceramics is studied by measuring its initial current-voltage curve at various temperatures. The results show that when the field strength is higher than the threshold for flash-sintering, the curves exhibit a nonlinear behavior by having an additional current on top of the linear current according to Ohm＇s law. Analyzing its transport behavior reveals that the additional current density is due to the extra oxygen vacancies induced by the electric field. The formation rate of the extra vacancies and associated current was related to the field strength.

Electro-statically controllable graphene local heater

We report on current-induced thermal power investigation of graphene nanostructure for potential local-heating ap- plications. It is found that the efficiency of heating can be greatly improved if graphene is patterned into structures with narrow width and long channel. In a narrow graphene-ribbon, the Joule heating power exhibits an obvious dependence on the back-gate voltage. By monitoring Raman spectra, the temperature of graphene-ribbon can be determined. The temperature of graphene-ribbon is modulated by the electric field effect when the sample is sourced with a relatively high current.

Influence of laser pulse on the autocorrelation function of H in a strong electric field

The autocorrelation function of electronic wave packet of hydrogen atom in a strong electric field below the zero-field ionization threshold is investigated in the formalism of semiclassical theory. It is found that the autocorrelation depends on the applied laser pulse significantly. In the case of narrow laser pulse, the reviving peaks in the autocorrelation can be attributed to the closed orbits of electrons, which are related to the classical dynamics of the system. But this correspondence is wiped out with increasing the laser width because of the interference among the adjacent reviving peaks.

Hydrogen Sensing Property of Lanthanum Complex Fluoride

Four potentiometer sensor cells have been prepared by using La0.95Pb0.05F2.95 as solid electrolyte(SE) and various materials as electrodes. The sensor cell `Bi(BiF3)|SE|Pt' exhibits the best performance with its 90% response time as short as 75 s to 100 Pa H2 in air at room temperature and with its linear decrease of electromotive force (EMF) with an increase of the logarithm of hydrogen partial pressure in the experimental range. The sensor cell shows weaker response to CO.

A novel multiple super junction power device structure with low specific on-resistance

A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm.

Hot-carrier reliability in OPTVLD-LDMOS

An improved structure that eliminates hot-carrier effects（HCE） in optimum variation lateral doping （OPTVLD） LDMOS is proposed.A formula is proposed showing that the surface electric field intensity of the conventional structure is strong enough to make a hot-carrier injected into oxide.However,the proposed structure effectively reduces the maximum surface electric field from 268 to 100 kV/cm and can be realized without changing any process,and thereby reduces HCE significantly.