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Room-temperature continuous-wave electrically injected Ⅲ-Nitride laser diode grown on Si
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作者 LIU FangMing 《Science Foundation in China》 CAS 2017年第1期30-,共1页
Subject Code:F04With the support by the National Natural Science Foundation of China and Chinese Academy of Sciences(CAS),the research team led by Prof.Yang Hui(杨辉)and Prof.Sun Qian(孙钱)at the Key Laboratory of Nan... Subject Code:F04With the support by the National Natural Science Foundation of China and Chinese Academy of Sciences(CAS),the research team led by Prof.Yang Hui(杨辉)and Prof.Sun Qian(孙钱)at the Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),CAS achieved the first InGaN-based laser diode directly grown on Si,operating under 展开更多
关键词 InGaN Nitride laser diode grown on Si Room-temperature continuous-wave electrically injected wave
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