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Enhanced resistance switching stability of transparent ITO/TiO_2/ITO sandwiches 被引量:1
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作者 孟洋 张培健 +5 位作者 刘紫玉 廖昭亮 潘新宇 梁学锦 赵宏武 陈东敏 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第3期503-507,共5页
We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stab... We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400 800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes. 展开更多
关键词 colossal electroresistance effect electrical pulse induced resistance switching (EPIR) transparent resistance random access memory (TRRAM)
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