On May 28, the State Electricity Regulatory Commission and the China Electricity Council jointly held a conference releasing the electric reliability indices in 2009 in Beijing.
The dynamic contact resistances of HH52P electromagnetic relays are measured under different ambient air tem- perature. Their diagnostic parameters are extracted and determined. It is found that the ambient air temper...The dynamic contact resistances of HH52P electromagnetic relays are measured under different ambient air tem- perature. Their diagnostic parameters are extracted and determined. It is found that the ambient air temperature obviously influ- ences some parameters. In order to research its influence on the electrical contact reliability of electromagnetic relay, the statistic analysis is applied to study the static contact resistance, the max of the dynamic contact resistance and the bounce time. It is found that the ambient air temperature regularly influences the three parameters. Thoroughly, the phenomenon is studied and analyzed in the point of material science so as to probe into the essential matter of it.展开更多
The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate le...The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.展开更多
Reliabilities of transmission and substation facilities with voltage levelof220 kVoraboveIn 2007, there were totally 356 power supply enterprises, including 28 EHV transmission and substation enterprises, and 245 powe...Reliabilities of transmission and substation facilities with voltage levelof220 kVoraboveIn 2007, there were totally 356 power supply enterprises, including 28 EHV transmission and substation enterprises, and 245 power generation enterprises submitting reliability performances of electric facilities at a voltage level of 220 kV or above to the Electric Power Reliability Management Center. The reliability indices of transmission and展开更多
Although dielectric ceramic capacitors possess attractive properties for high-power energy storage,their pronounced electrostriction effect and high brittleness are conducive to easy initiation and propagation of crac...Although dielectric ceramic capacitors possess attractive properties for high-power energy storage,their pronounced electrostriction effect and high brittleness are conducive to easy initiation and propagation of cracks that significantly deteriorate electrical reliability and lifetime of capacitors in practical applications.Herein,a new strategy for designing relaxor ferroelectric ceramics with K_(0.5)Na_(0.5)NbO_(3)-core/SiO_(2)-shell structured grains was proposed to simultaneously reduce the electric-field-induced strain and enhance the mechanical strength of the ceramics.The simulation and experiment declared that the bending strength and compression strength of the core-shell structured ceramic were shown to increase by more than 50% over those of the uncoated sample.Meanwhile,the electric-field-induced strain was reduced by almost half after adding the SiO_(2) coating.The suppressed electrical deformation and enhanced mechanical strength could alleviate the probability of generation of cracks and prevent their propagation,thus remarkably improving breakdown strength and fatigue endurance of the ceramics.As a result,an ultra-high breakdown strength of 425 kV cm^(-1) and excellent recoverable energy storage density(Wrec~4.64 J cm^(-3))were achieved in the core-shell structured sample.More importantly,the unique structure could enhance the cycling stability of the ceramic(Wrec variation<±2% after 105 cycles).Thus,mechanical performance optimization via grain structure engineering offers a new paradigm for improving electrical breakdown strength and fatigue endurance of dielectric ceramic capacitors.展开更多
文摘On May 28, the State Electricity Regulatory Commission and the China Electricity Council jointly held a conference releasing the electric reliability indices in 2009 in Beijing.
文摘The dynamic contact resistances of HH52P electromagnetic relays are measured under different ambient air tem- perature. Their diagnostic parameters are extracted and determined. It is found that the ambient air temperature obviously influ- ences some parameters. In order to research its influence on the electrical contact reliability of electromagnetic relay, the statistic analysis is applied to study the static contact resistance, the max of the dynamic contact resistance and the bounce time. It is found that the ambient air temperature regularly influences the three parameters. Thoroughly, the phenomenon is studied and analyzed in the point of material science so as to probe into the essential matter of it.
基金supported by the Key Program of the National Natural Science Foundation of China(Grant No.61334002) and the National Natural Science Foundation of China(Grant Nos.61604114,61404097,and 61504099)
文摘The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor(HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.
文摘Reliabilities of transmission and substation facilities with voltage levelof220 kVoraboveIn 2007, there were totally 356 power supply enterprises, including 28 EHV transmission and substation enterprises, and 245 power generation enterprises submitting reliability performances of electric facilities at a voltage level of 220 kV or above to the Electric Power Reliability Management Center. The reliability indices of transmission and
基金This work was supported by the National Natural Science Foundation of China(grants nos.52072150,51972146,and 51772175)the China Association for Science and Technology(Young Elite Scientists Sponsorship Program)the State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(project no.KF202002).
文摘Although dielectric ceramic capacitors possess attractive properties for high-power energy storage,their pronounced electrostriction effect and high brittleness are conducive to easy initiation and propagation of cracks that significantly deteriorate electrical reliability and lifetime of capacitors in practical applications.Herein,a new strategy for designing relaxor ferroelectric ceramics with K_(0.5)Na_(0.5)NbO_(3)-core/SiO_(2)-shell structured grains was proposed to simultaneously reduce the electric-field-induced strain and enhance the mechanical strength of the ceramics.The simulation and experiment declared that the bending strength and compression strength of the core-shell structured ceramic were shown to increase by more than 50% over those of the uncoated sample.Meanwhile,the electric-field-induced strain was reduced by almost half after adding the SiO_(2) coating.The suppressed electrical deformation and enhanced mechanical strength could alleviate the probability of generation of cracks and prevent their propagation,thus remarkably improving breakdown strength and fatigue endurance of the ceramics.As a result,an ultra-high breakdown strength of 425 kV cm^(-1) and excellent recoverable energy storage density(Wrec~4.64 J cm^(-3))were achieved in the core-shell structured sample.More importantly,the unique structure could enhance the cycling stability of the ceramic(Wrec variation<±2% after 105 cycles).Thus,mechanical performance optimization via grain structure engineering offers a new paradigm for improving electrical breakdown strength and fatigue endurance of dielectric ceramic capacitors.