Reform of the Comprehensive Practical Course System for Mechanical and Electronic Engineering Majors Under the Background of New Engineering

Under the background of new engineering,the reform of the comprehensive practical course system for mechanical and electronic engineering majors actively responds to the challenges posed by the new round of technological revolution and industrial transformation to higher education,cultivating top-notch innovative intellectuals with comprehensive engineering qualities,meeting the requirements of being able to solve complex engineering problems rather than just cognitive capabilities,forming two core courses through reconstructing and reshaping the core courses of the major.The core courses include Drive,Measurement,and Control I and Drive,Measurement,and Control II,which highlight the comprehensive framework of mechanical and electronic engineering professional knowledge,continuing the comprehensive practical course system based on the unity of knowledge and practice,following the trend of new engineering,highlighting the practicality of professional innovation,assisting engineering education reform,and promoting high-quality development of new engineering professionals cultivation.

The Challenges in Electrical and Electronic Technology Courses in Vocational Colleges

This paper addresses the challenges in the teaching of electrical and electronic technology in higher vocational colleges and proposes specific countermeasures to improve teaching quality and effectiveness.The countermeasures include optimizing teaching content,emphasizing practical application and innovation,innovating teaching methods,introducing modern instructional approaches,strengthening the teaching team,enhancing teacher quality and practical expertise,upgrading experimental equipment and facilities,enriching curriculum resources,and incorporating digital teaching materials.These measures aim to cultivate high-quality skilled talents,promote social and economic development,and enhance national competitiveness.By adjusting the course structure,incorporating real-world industry cases,and fostering collaboration with enterprises,students can better understand and apply electrical and electronic technology.The introduction of project-based teaching,flipped classrooms,and multimedia technology can enhance student engagement and facilitate independent learning.Furthermore,the improvement of experimental resources and the establishment of online teaching platforms can enhance students’practical skills and provide a variety of learning resources.These measures contribute to the overall improvement of electrical and electronic technology teaching in higher vocational colleges.

Teaching Design and Implementation of the Electrical and Electronic Technology Course Based on Teaching Ability Competition

The teaching ability competition is a vital method for stimulating teachers’enthusiasm and enhancing their teaching skills.This approach has gained increasing attention from colleges and universities in recent years.The competition focuses on evaluating teachers’capabilities in designing and implementing lessons,encouraging the exchange of new educational ideas and high-quality teaching methods.Reforming the teaching of Electrical and Electronic Technology courses based on insights from teaching competitions can significantly improve teaching quality.This paper explores the teaching design and implementation of the Electrical and Electronic Technology course,drawing on the principles of teaching ability competitions.First,it analyzes the existing problems in teaching this course.Then,it highlights the significant benefits that teaching competitions bring to the course.Based on these insights,the paper proposes practical strategies aimed at enhancing students’interest and practical skills,thereby promoting innovative developments in teaching Electrical and Electronic Technology.

Calculatons of the Electron Radius

Equating the Rest Mass Energy of a free electron to its Rest Charge Energy we prove that the electron cannot be a dimensionless point particle because if it were dimensionless, it would contain an infinite amount of Rest Charge Energy at the location of its charge since r = 0 gives , which is clearly not possible. Since the electron has no internal structure, equating its Rest Mass Energy to its Rest Charge Energy, we calculate the electron to be a sphere of radius 4.68 × 10-16 meters. We calculate the Electric Field at the surface of the electron due to its charge and the Repulsive Force two electrons in proximity exert on each other.

Mathematical Wave Functions and 3D Finite Element Modelling of the Electron and Positron

The wave/particle duality of particles in Physics is well known. Particles have properties that uniquely characterize them from one another, such as mass, charge and spin. Charged particles have associated Electric and Magnetic fields. Also, every moving particle has a De Broglie wavelength determined by its mass and velocity. This paper shows that all of these properties of a particle can be derived from a single wave function equation for that particle. Wave functions for the Electron and the Positron are presented and principles are provided that can be used to calculate the wave functions of all the fundamental particles in Physics. Fundamental particles such as electrons and positrons are considered to be point particles in the Standard Model of Physics and are not considered to have a structure. This paper demonstrates that they do indeed have structure and that this structure extends into the space around the particle’s center (in fact, they have infinite extent), but with rapidly diminishing energy density with the distance from that center. The particles are formed from Electromagnetic standing waves, which are stable solutions to the Schrödinger and Classical wave equations. This stable structure therefore accounts for both the wave and particle nature of these particles. In fact, all of their properties such as mass, spin and electric charge, can be accounted for from this structure. These particle properties appear to originate from a single point at the center of the wave function structure, in the same sort of way that the Shell theorem of gravity causes the gravity of a body to appear to all originate from a central point. This paper represents the first two fully characterized fundamental particles, with a complete description of their structure and properties, built up from the underlying Electromagnetic waves that comprise these and all fundamental particles.

Shanghai Huaxin Electronics and Electrical Appliances General Factory

China’s largest electronic piano specialized production factory—the Shanghai Huaxin Electronics and Electrical Appliances General Factory—developed and grew up from a small loss-incurring neighborhood factory a decade ago. At present, the factory’s annual output value has exceeded RMB100 million for three years running, and sales are increasing at a rate of 30 percent per year.

Electrical and Electronic Waste in Northwest Mexico

The waste derived from Electrical and Electronic Equipment (WEEE) is of interest now worldwide, in some countries due to the rapid technological development and in others due to technological dependence through the acquisition of second hand equipment. Therefore it is necessary to implement strategies for the sustainable management of electrical and electronic equipment at the end of its useful life. This paper presents the results of an investigation that was conducted in a city located in the Northwest of Mexico, which seeks to understand the management practices of household WEEE generators. A survey was applied to a representative sample of the population with a confidence level of 90%. Six home appliances were quantified and it was found that approximately 21% of them are disposed directly as part of the household flow of Municipal Solid Waste (MSW), while 79% are storage for a latter sale, repair or reuse. The results obtained support the need to develop evaluations and to implement possible scenarios for the sustainable management of Electrical and Electronic Waste.

电子工作台软件Electronics Workbench及其应用初探

对加拿大 Ｉｎｔｅｒａｃｔｉｖｅ Ｉｍ ａｇｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｌｔｄ．的电路 Ｃ Ａ Ｄ软件 Ｅｌｅｃｔｒｏｎｉｃｓ Ｗｏｒｋｂｅｎｃｈ 的主要功能、特点作了简要介绍，同时探讨了该软件在电子电路设计。

Analysis of Anomalous Enhancement in TEC and Electron Density in the China Region Prior to the 17 March 2015 Geomagnetic Storm Based on Ground and Space Observations

Total Electron Content(TEC)and electron density enhancement were observed on the day before 17 March 2015 great storm in the China Region.Observations from ground-and space-based instruments are used to investigate the temporal and spatial evolution of the pre-storm enhancement.TEC enhancement was observed from 24°N to 30°N after 10:00 UT at 105°E,110°E and 115°E longitudes on March 16.The maximum magnitude of TEC enhancement was more than 10 TECU and the maximal relative TEC enhancement exceeded 30%.Compared with geomagnetic quiet days,the electron density of Equatorial Ionization Anomaly(EIA)northern peak from Swarm A/C satellites on March 16 was larger and at higher latitudes.NmF2 enhanced during 11:30—21:00 UT at Shaoyang Station and increased by 200%at~16:00 UT.However,TEC and electron density enhancement were not accompanied by a significant change of hmF2.Most research has excluded some potential mechanisms as the main driving factors for storm-time density enhancements by establishing observational constraints.In this paper,we observed pre-storm enhancement in electron density at different altitudes and Equatorial Electrojet(EEJ)strength results derived from ground magnetometers observations suggest an enhanced eastward electric field from the E region probably played a significant role in this event.

Effect of electric field on the electronic spectrum and the persistent current of a quantum ring with two electrons

The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.

A Simplified Sliding Mode Controlled Electronic Differential for an Electric Vehicle with Two Independent Wheel Drives

This paper presents a simple sliding mode control strategy used for an electronic differential system for electric vehicle with two independent wheel drives. When a vehicle drives along a curved road lane, the speed of the inner wheel has to be different from that of the outer wheel in order to prevent the vehicle from vibrating and travelling an unsteady path. Because each wheel of this electrical vehicle has independent driving force, an electrical differential system is required to replace a gear differential system. However, it is difficult to analyse the nonlinear behaviour of the differential system in relation to the speed and steering angle, as well as vehicle structure. The proposed propulsion system consists of two permanent magnet synchronous machines that ensure the drive of the two back driving wheels. The proposed control structure called independent machines for speed control allows the achievement of an electronic differential which ensures the control of the vehicle behaviour on the road. It also allows to control, independently, every driving wheel to turn at different speeds in any curve. Analysis and simulation results of the proposed system are presented in this paper.

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

Diagnosis of Electronic Excitation Temperature in Surface Dielectric Barrier Discharge Plasmas at Atmospheric Pressure

The electronic excitation temperature of a surface dielectric barrier discharge （DBD） at atmospheric pressure has been experimentally investigated by optical emission spectroscopic measurements combined with numerical simulation. Experiments have been carried out to deter- mine the spatial distribution of electric field by using FEM software and the electronic excitation temperature in discharge by calculating ratio of two relative intensities of atomic spectral lines. In this work, we choose seven Ar atomic emission lines at 415.86 nm [（3s^23p^5）5p →（3s^23p^5）4s] and 706.7 nm, 714.7 nm, 738.4 nm, 751.5 nm, 794.8 nm and 800.6 nm [（3s^23p^5）4p → （3s^23p^5）4s] to estimate the excitation temperature under a Boltzmann approximation. The average electron energy is evaluated in each discharge by using line ratio of 337.1 nm （N2（C^3Пu →B3Пg）） to 391.4 nm （N2^＋（B2 ∑u^＋→ ∑g^＋））. Furthermore, variations of the electronic excitation tempera- ture are presented versus dielectric thickness and dielectric materials. The discharge is stable and uniform along the axial direction, and the electronic excitation temperature at the edge of the copper electrode is the largest. The corresponding average electron energy is in the range of 1.6- 5.1 eV and the electric field is in 1.7-3.2 MV/m, when the distance from copper electrode varies from 0 cm to 6 cm. Moreover, the electronic excitation temperature with a higher permittivity leads to a higher dissipated electrical power.

Electronic structures of stacked layers quantum dots:influence of the non-perfect alignment and the applied electric field

Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum dots are completely aligned, the electron energy levels decrease with the horizontally applied electric field. However, energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field. In addition to shifting the energy levels, the electric field can also manipulate the electron wavefunctions confined in the quantum dots, in company with the non-perfect alignment.

Promoting and controlling electron transfer of furfural oxidation efficiently harvest electricity,furoic acid,hydrogen gas and hydrogen peroxide

Conventional chemical oxidation of aldehydes such as furfural to corresponding acids by molecular oxygen usually needs high pressure to increase the solubility of oxygen in aqueous phase,while electrochemical oxidation needs input of external electric energy.Herein,we developed a liquid flow fuel cell(LFFC)system to achieve oxidation of furfural in anode for furoic acid production with co-production of hydrogen gas.By controlling the electron transfer in cathode for reduction of oxygen,efficient generation of electricity or production of H_(2)O_(2)were achieved.Metal oxides especially Ag_(2)O have been screened as the efficient catalyst to promote the oxidation of aldehydes,while liquid redox couples were used for promoting the kinetics of oxygen reduction.A novel alkaline-acidic asymmetric design was also used for anolyte and catholyte,respectively,to promote the efficiency of electron transfer.Such an LFFC system achieves efficient conversion of chemical energy of aldehyde oxidation to electric energy and makes full use the transferred electrons for high-value added products without input of external energy.With(VO_(2))_(2)SO_(4)as the electron carrier in catholyte for four-electron reduction of oxygen,the peak output power density(Pmax)at room temperature reached 261 mW/cm^(2)with furoic acid and H_(2)yields of 90%and 0.10 mol/mol furfural,respectively.With anthraquinone-2-sulfonate(AQS)as the cathodic electron carrier,Pmaxof 60 mW/cm^(2)and furoic acid,H_(2)and H_(2)O_(2)yields of 0.88,0.15 and 0.41 mol/mol furfural were achieved,respectively.A new reaction mechanism on furfural oxidation on Ag_(2)O anode was proposed,referring to one-electron and two-electron reaction pathways depending on the fate of adsorbed hydrogen atom transferred from furfural aldehyde group.

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

Tunable electronic structures of germanane/antimonene van der Waals heterostructures using an external electric field and normal strain

oscale devices.In the present work,we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an external electric field by using the first-principles calculations based on density functional theory(DFT).The results demonstrate that the germanane/antimonene vdW heterostructure behaves as a metal in a[1,,0.6]V/A range,while it is a direct semiconductor in a[0.5,0.2]V/A range,and it is an indirect semiconduc-tor in a[0.3,1.0]V/A range.Interestingly,the band alignment of germanane/antimonene vdW heterostructure appears astype-II feature both in a[0.5,0.1]range and in a[0.3,1]V/A range,while it shows the type-I character at 0.2 V/A.In ad-dition,we find that the germanane/antimonene vdW heterostructure is an indirect semiconductor both in an in-plane biaxial strain range of[[5%,,3%]and in an in-plane biaxial strain range of[3%,5%],while it exhibits a direct semiconductor character in an in-plane biaxial strain range of[2%,2%].Furthermore,the band alignment of the germanane/antimonene vdW heterostructure changes from type-II to type-I at an in-plane biaxial strain of 3%.The adjustable electronic structure of this germanane/antimonene vdW heterostructure will pave the way for developing the nanoscale devices.

Characterization of a New DC-Glow Discharge Plasma Set-Up to Enhance the Electronic Circuits Performance

The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some properties of a printed circuit board (PCB) by exposing it to the plasma. The device consists of cylindrical discharge chamber with movable parallel circular copper electrodes (cathode and anode) fixed inside it. The distance between them is 12 cm. This plasma experiment works in a low-pressure range (0.15 - 0.70 Torr) for Ar gas with a maximum DC power supply of 200 W. The Paschen curves and electrical plasma parameters (current, volt, power, resistance) characterized to the plasma have been measured and calculated at each cm between the two electrodes. Besides, the electron temperature and ion density are obtained at different radial distances using a double Langmuir probe. The electron temperature (KTe) was kept stable in range 6.58 to 10.44 eV;whereas the ion density (ni) was in range from 0.91 × 1010 cm−3 to 1.79 × 1010 cm−3. A digital optical microscope (800×) was employed to draw a comparison between the pre-and after effect of exposure to plasma on the shaping of the circuit layout. The experimental results show that the electrical conductivity increased after plasma exposure, also an improvement in the adhesion force in the Cu foil surface. A significant increase in the conductivity can be directly related to the position of the sample surfaces as well as to the time of exposure. This shows the importance of the obtained results in developing the PCBs manufacturing that uses in different microelectronics devices like those onboard of space vehicles.

Review of Electrical and Electronic Architectures for Autonomous Vehicles:Topologies,Networking and Simulators

With the rapid development of autonomous vehicles,more and more functions and computing requirements have led to the continuous centralization in the topology of electrical and electronic(E/E)architectures.While certain Tier1 suppliers,such as BOSCH,have previously proposed a serial roadmap for E/E architecture development,implemented since 2015 with significant contributions to the automotive industry,lingering misconceptions and queries persist in actual engineering processes.Notably,there are concerns regarding the perspective of zone-oriented E/E architectures,characterized by zonal concentration,as successors to domain-oriented E/E architectures,known for functional concentration.Addressing these misconceptions and queries,this study introduces a novel parallel roadmap for E/E architecture development,concurrently evaluating domain-oriented and zone-oriented schemes.Furthermore,the study explores hybrid E/E architectures,amalgamating features from both paradigms.To align with the evolution of E/E architectures,networking technologies must adapt correspondingly.The networking mechanisms pivotal in E/E architecture design are comprehensively discussed.Additionally,the study delves into modeling and verification tools pertinent to E/E architecture topologies.In conclusion,the paper outlines existing challenges and unresolved queries in this domain.