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Electrical bistable devices using composites of zinc sulfide nanoparticles and poly-(N-vinylcarbazole) 被引量:2
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作者 曹亚鹏 胡煜峰 +8 位作者 李剑焘 叶海航 吕龙锋 宁宇 鲁启鹏 唐爱伟 娄志东 侯延冰 滕枫 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第3期298-301,共4页
N-dodecanethiol capped zinc sulfide(Zn S) nanocrystals were synthesized by the one-pot approach and blended with poly(N-vinylcarbazole)(PVK) to fabricate electrical bistable devices. The corresponding devices di... N-dodecanethiol capped zinc sulfide(Zn S) nanocrystals were synthesized by the one-pot approach and blended with poly(N-vinylcarbazole)(PVK) to fabricate electrical bistable devices. The corresponding devices did exhibit electrical bistability and negative differential resistance(NDR) effects. A large ON/OFF current ratio of 104 at negative voltages was obtained by applying different amplitudes of sweeping voltage. The observed conductance switching and the negative differential resistance are attributed to the electric-field-induced charge transfer between the nanocrystals and the polymer,and the charge trapping/detrapping in the nanocrystals. 展开更多
关键词 electrical bistable devices ON/OFF current ratio electric-field-induced charge transfer trapping/detrapping
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Electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
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作者 Ya-Jie Li Jia-Qi Wang +7 位作者 Lu Guo Guang-Can Chen Zhao-Song Li Hong-Yan Yu Xu-Liang Zhou Huo-Lei Wang Wei-Xi Chen Jiao-Qing Pan 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期38-41,共4页
We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both ele... We experimentally demonstrate an In P-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source. 展开更多
关键词 DFB In electrically and Optically Bistable Operation in an Integration of a 1310 nm DFB Laser and a Tunneling Diode
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