Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

The Analytical Potential Energy Function of NH Radical Molecule in External Electric Field

The geometric structures of an Nit radical in different external electric fields are optimized by using the density functional B3P86/cc-PVSZ method, and the bond lengths, dipole moments, vibration frequencies and IR spectrum are obtained. The potential energy curves are gained by the CCSD （T） method with the same basis set. These results indicate that the physical property parameters and potential energy curves may change with the external electric field, especially in the reverse direction electric field. The potential energy function of zero field is fitted by the Morse potential, and the fitting parameters are in good accordance with the experimental data. The potential energy functions of different external electric fields are fitted adopting the constructed potential model. The fitted critical dissociation electric parameters are shown to be consistent with the numerical calculation, and the relative errors are only 0.27% and 6.61%, hence the constructed model is reliable and accurate. The present results provide an important reference for further study of the molecular spectrum, dynamics and molecular cooling with Stark effect.

Investigation on the Dielectric Properties of CO2 and CO2-Based Gases Based on the Boltzmann Equation Analysis

In this paper, the dielectric properties of CO2, CO2/air, CO2/O2, CO2/N2, CO2/CF4, CO2/CH4, CO2/He, C02/H2, CO2/NH3 and CO2/CO were investigated based on the Boltzmann equation analysis, in which the reduced critical electric field strength （E/N）cr of the gases was derived from the calculated electron energy distribution function （EEDF） by solv- ing the Boltzmann transport equation. In this work, it should be noted that the fundamental data were carefully selected by the published experimental results and calculations to ensure the validity of the calculation. The results indicate that if He, H2, N2 and CH4, in which there axe high ionization coefficients or a lack of attachment reactions, are added into CO2, the dielectric properties will decrease. On the other hand, air, O2, NH3 and CFa （ranked in terms of （E/N）cr value in increasing order） have the potential to improve the dielectric property of CO2 at room temperature.