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Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field 被引量:1
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作者 Y.Yao T.Ochiai +4 位作者 T.Mano T.Kuroda T.Noda N.Koguchi K.Sakoda 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第10期882-885,共4页
A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the ... A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically. The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method. The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies. It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm. 展开更多
关键词 GAAS Electronic structure of GaAs/A1GaAs quantum double rings in lateral electric field
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