The electrical switching characteristics of single copper tetra-cyanoquinodimethane nanowire

In this paper, method combined vapor transportation with in-situ chemical reaction is employed to synthesize Cu(TCNQ) nanowires. The typical diameter of nanowires is 50-500 nm with high uniformity. The electrical switching characteristics of single nanowire are observed. The ON-OFF resistance ratio for switching reaches 10~4. The investigation reveals a linear relationship between the switching threshold and the spacing between the two electrodes. The temporal response of the switching process is 30 ns and the switch exhibits good reproducibility. The collapse of the nanowire under the condition of current surge is also discussed. It is believed that the Cu(TCNQ) nanowire could be promising for applications in nanoelectronics.

Electrical switching in cadmium ferrite with different rare-earth ions(Sm^(3+), Y^(3+), and La^(3+))

The cadmium ferrite and 5 % rare-earth ions（Sm^3＋, Y^3＋, and La^3＋） added Cd ferrites were synthesized by oxalate co-precipitation method and characterized by X-ray diffraction（XRD）, Fourier transform infrared spectroscopy（FT-IR）, and scanning electron microscope（SEM） techniques. All ferrite samples under investigation exhibit current-controlled negative resistance type I–E characteristics at room temperature. The required electrical-switching field in cadmium ferrite is higher than that for 5 % Sm^3＋, Y^3＋, and La^3＋added cadmium ferrites. The5% addition of Sm^3＋, Y^3＋, and La^3＋ in cadmium ferrite is found to decrease the grain size in this ferrite. This decrement in the grain size makes the required switching field to decrease in cadmium ferrite. No aging effect for electrical switching is observed in these ferrites.

Enhanced resistance switching stability of transparent ITO/TiO_2/ITO sandwiches

We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Effect of electric boundary conditions on crack propagation in ferroelectric ceramics

In this paper, the effect of electric boundary conditions on Mode I crack propagation in ferroelectric ceramics is studied by using both linear and nonlinear piezoelectric fracture mechanics. In linear analysis, impermeable cracks under open circuit and short circuit are analyzed using the Stroh formalism and a rescaling method. It is shown that the energy release rate in short circuit is larger than that in open circuit. In nonlinear analysis, permeable crack conditions are used and the nonlinear effect of domain switching near a crack tip is considered using an energy-based switching criterion proposed by Hwang et al.（Acta Metal. Mater.,1995）. In open circuit, a large depolarization field induced by domain switching makes switching much more diffcult than that in short circuit. Analysis shows that the energy release rate in short circuit is still larger than that in open circuit, and is also larger than the linear result. Consequently,whether using linear or nonlinear fracture analysis, a crack is found easier to propagate in short circuit than in open circuit, which is consistent with the experimental observations of Kounga Njiwa et al.（Eng. Fract. Mech., 2006）.

Vibration mechanism analysis and algorithm optimization of contactor contact system

In order to solve the problem of vibration bounce caused by the contact between moving and stationary contacts in the process of switching on,two-degree-of-freedom motion differential equation of the contact system is established.Genetic algorithm is used to optimize the pull in process of AC contactor.The whole process of contact bounce was observed and analyzed by high-speed photography experiment.The theory and experimental results were very similar.The iron core has collided before the contact is separated,which further aggravates the contact bounce.When the iron core bounces collided again,the bounce of the contact was not affected.During the operation of the contactor,the movement of the moving iron core will cause slight vibration of the system.The contact bounce time and the maximum amplitude are reduced.The research results provide a theoretical basis for further control and reduction of contact bounce.

Electrical and spin switches in single-molecule junctions

Single-molecule electrical and spin switches have been one of the main research focuses in molecular electronics and spintronics because they may form the most important elements for the future information technology,thus attracting great attention in the scientific community and witnessing significant progresses benefiting from the combination of physics,chemistry,materials,and engineering.The key issue of constructing single-molecule switches is the development of stimulus-responsive systems that provide bistable or multiple states.In this review,we summarize the recent advances of this field in terms of the external stimulus that induces the switching.A variety of external stimuli,such as light,electric field,magnetic field,mechanical force,and chemical stimulus,have been successfully employed to activate the reversible switching in single-molecule junctions by manipulating molecular structures,conformations,electronic states,and spin states.As a burgeoning field,we finally put forward the challenges in molecular electronics and spintronics that need to be solved,which will initiate intense research.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Subject Code:F04 With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Wang Kaiyou(王开友)from the Institute of Semiconductors,Chinese Academy of Sciences demonstrates all-electric and programmable manipulations of ferromagnetic bits without external

Voltage-controlled optical filter based on electrowetting

In this letter, we propose a voltage-controlled optical filter based on electrowetting. The device is made of a transparent cubic cell filled with two immiscible liquids having three indium tin oxide electrodes fabricated on the bottom substrate of the cell. A conductive droplet carrying a color filter is placed on the ITO electrode and the surrounding liquid is density-matched silicone oil. Under zero bias, the droplet is placed in the middle of tile substrate and white light passes through the filter and we can see red light on the screen. When a voltage is applied to the device, the filter moves with the liquid based on electrowetting effect, we can see the white light on the screen. Due to the movement of the liqnid, our device functions as an optical switcher. The switch trine of the device is -70 ms. The proposed device has a wide application in optical communication. electronic display, and optical switch.

Giant spin torque efficiency in single-crystalline antiferromagnet MnAu films

Antiferromagnetic (AFM) materials have attracted wide attention in spin-orbit torque (SOT)-based spintronic due to its abundant spin-dependent properties and unique advantage of immunity against external field perturbations.To act as the charge-to-spin conversion source in energy-saving spintronic devices,it is of great importance for the AFM material to possess a large spin torque efficiency(ξDL).In this work,using the spin torque ferromagnetic resonance (ST-FMR) technique and a Mn2Au/Ni Fe(Py) bilayer system,we systemically study the ξDLof AFM Mn2Au films with different crystal structures.Compared with polycrystalline Mn2Au with effective ξDL<0.051,we show a much larger ξDLof~0.333 in single-crystal Mn2Au,which arises from the large spin Hall conductivity instead of electrical resistivity.Moreover,with a further contribution of interfacial effects,the effective ξDLof single-crystalline Mn2Au/Py system increases to 0.731,which is more than two times larger than the value of ~0.22 reported for the Mn2Au/CoFeB system.By utilizing the largeξDLof Mn2Au in a perpendicularly magnetized Mn Ga/Mn2Au system,energy-efficient deterministic magnetization switching with a current density at ~10^(6)A cm^(-2)is achieved.Our results reveal a significant potential of Mn2Au as an efficient SOT source and shed light on its application in future AFM material-based SOT integration technology.

Single-molecule electric switches swing both ways

With the support by the National Natural Science Foundation of China,the research team led by Prof.Guo Xuefeng(郭雪峰)at the College of Chemistry and Molecular Engineering,Peking University,realized the first fully-reversible two-mode single-molecule electrical switch,which was published in Science(2016,352:1443—1445).