Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable ...Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable transport properties throughgating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practicalapplications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi2Te3 transport properties viaconstructing ferroelectric Rashba architectures, i.e., 2D Bi2Te3/a-In2Se3 ferroelectric field-effect transistors. By switchingthe polarization states of a-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density andmagnetoresistance (MR) of the Bi2Te3 film can be effectively modulated. Importantly, a shift of the Fermi level towards aband gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to theconductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting inthe enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tunethe electronic properties of TI and can further extend to quantum transport properties.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12004099 and 11974099)the Zhongyuan Leading Talents,Plan for Leading Talent of Fundamental Research of the Central China in 2020,and the Intelligence Introduction Plan of Henan Province in 2021(Grant No.CXJD2021008).
文摘Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable transport properties throughgating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practicalapplications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi2Te3 transport properties viaconstructing ferroelectric Rashba architectures, i.e., 2D Bi2Te3/a-In2Se3 ferroelectric field-effect transistors. By switchingthe polarization states of a-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density andmagnetoresistance (MR) of the Bi2Te3 film can be effectively modulated. Importantly, a shift of the Fermi level towards aband gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to theconductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting inthe enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tunethe electronic properties of TI and can further extend to quantum transport properties.
