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A MULTI-COUPLED FINITE ELEMENT ANALYSIS OF RESISTANCE SPOT WELDING PROCESS 被引量:3
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作者 Hou Zhigang Wang Yuanxun +1 位作者 Li Chunzhi Chert Chuanyao 《Acta Mechanica Solida Sinica》 SCIE EI 2006年第1期86-94,共9页
A two-dimensional axisymmetric finite element model is developed to analyze the transient thermal and mechanical behaviors of the Resistance Spot Welding (RSW) process using commercial software ANSYS. Firstly a dire... A two-dimensional axisymmetric finite element model is developed to analyze the transient thermal and mechanical behaviors of the Resistance Spot Welding (RSW) process using commercial software ANSYS. Firstly a direct-coupled electrical-thermal Finite Element Analysis (FEA) is performed to analyze the transient thermal characteristics of the RSW process. Then based on the thermal results a sequential coupled thermo-elastic-plastic analysis is conducted to determine the mechanical features of the RSW process. The thermal history of the whole process and the temperature distribution of the weldment are obtained through the analysis. The mechanical features, including the distributions of the contact pressure at both the faying surface and the electrode-workpiece interface, the stress and strain distributions in the weldment and their changes during the RSW process, the deformation of the weldment and the electrode displacement are also calculated. 展开更多
关键词 Finite Element Analysis (FEA) Resistance Spot Welding (RSW) electrical-thermal coupling thermo-elastic-plastic analysis thermal behavior mechanical feature
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Steady state electrical–thermal coupling analysis of TSV 被引量:1
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作者 Jingrui Chai Gang Dong +1 位作者 Zheng Mei Weijun Zhu 《Journal of Semiconductors》 EI CAS CSCD 2018年第9期82-87,共6页
This paper presents a blended analytical electrical–thermal model for steady state thermal analysis of through-silicon-via(TSV) in three-dimensional(3 D) integrated circuits. The proposed analytical model is vali... This paper presents a blended analytical electrical–thermal model for steady state thermal analysis of through-silicon-via(TSV) in three-dimensional(3 D) integrated circuits. The proposed analytical model is validated by the commercial FEM tool—COMSOL. The comparison between the results of the proposed analytical formulas and COMSOL shows that the proposed formulas have very high accuracy with a maximum error of 0.1%.Based on the analytical model, the temperature performance of TSV is studied. Design guide lines of TSV are also given as:(1) the radius of the TSV increases, the resistance decreases and the temperature can be increased;(2) the thicker the dielectric layer, the higher the temperature;(3) compared with carbon nanotube, the Cu enlarges the temperature by 34 K, and the W case enlarges the temperature by 41 K. 展开更多
关键词 through-silicon-via (TSV) electrical-thermal coupling TEMPERATURE ITERATIVE
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