Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas...Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO：A1 films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO：A1 films and plays an important role in the properties of ZnO：A1 films. The electrical conductivity and infrared （IR） reflectance are improved due to the increase of electron carrier concentration, and the average trans- mittance decreases, which is ascribed to the strong scat- tering from the hydrogen incorporated and oxygen vacancies in ZnO：A1 films. In this study, the resistivity of 5.5 × 10-4 Ω.cm is obtained, the average transmittance of the wavelength in the range of 400-900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of com- petition between Burstein-Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.展开更多
In this work, the optical absorption spectra of carbon-nickel films annealed at different temperatures（300-1000 ℃） with a special emphasis on the surface plasmon resonance（SPR） were investigated. The films were g...In this work, the optical absorption spectra of carbon-nickel films annealed at different temperatures（300-1000 ℃） with a special emphasis on the surface plasmon resonance（SPR） were investigated. The films were grown on quartz substrates by radio-frequency（RF）magnetron co-sputtering at room temperature with a deposition time of 600 s. The optical absorption peaks due to the SPR of Ni particle are observed in the wavelength range of 300-330 nm. With annealing temperature increasing up to 500 ℃ due to the increase in Ni particle size, the intensity of the SPR peaks increases, but weakens with annealing temperature increasing over 500 ℃. The Ni nanoparticle size, the dielectric function of carbon matrix（ε_m） and the plasma frequency of the free electrons（ω_p） at500 ℃have the maximum values of 21.63 nm, 0.471 and5.26 9 10^（15）s^（-1）, respectively. The absorption peak shows a redshift trend up to 500 ℃and then turn to blueshift with annealing temperature increasing over 500 ℃ These observations are in a good agreement with the electrical measurements in temperature range of 15-520 K and the Maxwell-Garnett（M-G） effective medium theory（EMT）.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.21101151 and 51272250)
文摘Aluminum-doped zinc oxide （ZnO：AI） films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temper- ature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO：A1 films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO：A1 films and plays an important role in the properties of ZnO：A1 films. The electrical conductivity and infrared （IR） reflectance are improved due to the increase of electron carrier concentration, and the average trans- mittance decreases, which is ascribed to the strong scat- tering from the hydrogen incorporated and oxygen vacancies in ZnO：A1 films. In this study, the resistivity of 5.5 × 10-4 Ω.cm is obtained, the average transmittance of the wavelength in the range of 400-900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of com- petition between Burstein-Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.
文摘In this work, the optical absorption spectra of carbon-nickel films annealed at different temperatures（300-1000 ℃） with a special emphasis on the surface plasmon resonance（SPR） were investigated. The films were grown on quartz substrates by radio-frequency（RF）magnetron co-sputtering at room temperature with a deposition time of 600 s. The optical absorption peaks due to the SPR of Ni particle are observed in the wavelength range of 300-330 nm. With annealing temperature increasing up to 500 ℃ due to the increase in Ni particle size, the intensity of the SPR peaks increases, but weakens with annealing temperature increasing over 500 ℃. The Ni nanoparticle size, the dielectric function of carbon matrix（ε_m） and the plasma frequency of the free electrons（ω_p） at500 ℃have the maximum values of 21.63 nm, 0.471 and5.26 9 10^（15）s^（-1）, respectively. The absorption peak shows a redshift trend up to 500 ℃and then turn to blueshift with annealing temperature increasing over 500 ℃ These observations are in a good agreement with the electrical measurements in temperature range of 15-520 K and the Maxwell-Garnett（M-G） effective medium theory（EMT）.
