Because of their unique mechanical and electrical properties,zinc oxide(ZnO)nanowires are used widely in microscopic and nanoscopic devices and structures,but characterizing them remains challenging.In this paper,two ...Because of their unique mechanical and electrical properties,zinc oxide(ZnO)nanowires are used widely in microscopic and nanoscopic devices and structures,but characterizing them remains challenging.In this paper,two pick-up strategies are proposed for characterizing the electrical properties of ZnO nanowires using SEM equipped with a nanomanipulator.To pick up nanowires efficiently,direct sampling is compared with electrification fusing,and experiments show that direct sampling is more stable while electrification fusing is more efficient.ZnO nanowires have cut-off properties,and good Schottky contact with the tungsten probes was established.In piezoelectric experiments,the maximum piezoelectric voltage generated by an individual ZnO nanowire was 0.07 V,and its impedance decreased with increasing input signal frequency until it became stable.This work offers a technical reference for the pick-up and construction of nanomaterials and nanogeneration technology.展开更多
Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and nanosensors.However,measuring the electrical properties of individual nanowires directly remains challengi...Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and nanosensors.However,measuring the electrical properties of individual nanowires directly remains challenging because of their small size,thereby hindering the comprehensive understanding of nanowire-based device performance.A crucial factor in achieving reliable electrical characterization is establishing well-determined contact conditions between the nanowire sample and the electrodes,which becomes particularly difficult for soft nanowires.Introduced here is a novel technique for measuring the conductivity of an individual nanowire with the aid of automated nanomanipulation using an atomic force microscope.In this method,two nanowire segments cut from the same silver nanowire are positioned onto a pair of gold electrodes,serving as flexible nanoprobes to establish controllable contact with the sample.By changing the contact points along the nanowire sample,conductivity measurements can be performed on different regions,thereby eliminating the influence of contact resistance by analyzing multiple current–voltage curves.Using this approach,the resistivity of a 100-nm-diameter silver nanowire is determined to be 3.49×10^(−8)Ωm.展开更多
Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism.Tin powders are used to...Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires.All of the I-V curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.展开更多
The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This m...The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance.展开更多
In the last two decades a growing interest has been shown in the investigation of atmospheric pressure plasma jets(APPJs)that operate in contact with liquid samples.In order to form a complete picture about such exper...In the last two decades a growing interest has been shown in the investigation of atmospheric pressure plasma jets(APPJs)that operate in contact with liquid samples.In order to form a complete picture about such experimental systems,it is necessary to perform detailed diagnostics of plasma jets,as one step that will enable the adjustment of system properties for applications in different areas.In this work,we conducted a detailed electrical characterisation of a plasma system configuration used for water treatment.A helium plasma jet,with a pin electrode powered by a continuous sine wave at a frequency of 330 k Hz,formed a streamer that was in contact with a distilled water sample.An electrical circuit allowed the monitoring of electrical signals supplied to the jet and also to the plasma itself.An electrical characterisation together with power consumption measurements was obtained by using two different methods.The first method was based on the direct measurements of voltage and current signals,while in the second method we used'Lissajous figures'.We compared these two methods when used for discharge power estimation and addressed their advantages and limitations.The results showed that both of these methods could be used to successfully determine power consumed by a discharge in contact with water,but only when taking into account power dissipation without plasma.展开更多
Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures an...Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures and insolations experienced in State of Qatar was utilized to aid presenting a simplified characterization approach for the special case of arid environmental conditions. The chosen model was the well-known single diode model with both series and parallel resistors for greater accuracy. The modeling technique was validated by comparing the numerically calculated electrical characteristics with experimentally obtained data using two approaches: a single indoor fixed monocrystalline PV module inside a solar simulation chamber which physically simulated different weather scenarios by changing irradiation intensities and temperature, and a set of outdoor fixed polycrystalline PV modules. The result of the indoor experiment was presented in form of performance curves, and the outdoor experiment results in a monthly accumulated power production chart format. Both illustration types showed acceptable tolerance.展开更多
We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the ...We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I - V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.展开更多
Carbon nanoparticles(CNPs)have received considerable attention due to their exceptional qualities and adaptability.Their unique physical and chemical characteristics make them extremely intriguing as materials for num...Carbon nanoparticles(CNPs)have received considerable attention due to their exceptional qualities and adaptability.Their unique physical and chemical characteristics make them extremely intriguing as materials for numerous high-potential applications,such as electronics and gas sensing.This study focused on producing carbon-based nanomaterial devices by deposition of flame-formed carbon nanoparticles on a suitable substrate and investigating their gas-sensing properties.CNPs were produced in a fuel-rich laminar premixed ethylene/air flame and the collected CNP film was morphologically and electrically characterized.The electrical conductivity of the film was investigated as a function of ethanol concentration and amount of deposited material.Notably,CNP films exhibited high sensitivity to ambient ethanol gas concentrations,and rapid recovery times at room temperature,and showed a sensitivity increasing with the amount of deposited material and the surface complexity.Our findings demonstrate the high potential of combustion-generated CNPs as building materials for low-cost and portable ethanol sensors.展开更多
This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks: 1) inelastic electr...This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks: 1) inelastic electron tunneling spectroscopy (IETS), 2) lateral profiling of threshold voltages, interface-trap density, and oxide charge density distributions along the channel of an MOSFET, and 3) pulse agitated substrate hot electron injection (PASHEI) technique for measuring trapping effects in the gate dielectric at low and modest gate voltages.展开更多
Polyperfluorobutyne-2 (PPFB), a conjugated polymer, was characterized with IR, UV-VIS, fluorescence spectra etc. The electrical conductivities of the polymer doped with various dopants were investigated. The effect of...Polyperfluorobutyne-2 (PPFB), a conjugated polymer, was characterized with IR, UV-VIS, fluorescence spectra etc. The electrical conductivities of the polymer doped with various dopants were investigated. The effect of the molecular structure of PPFB on the electrical properties was discussed.展开更多
Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidizatio...Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.展开更多
In order to solve the problem effectively that increasing car ownership relies on limited resources like oil and the resulting environmental pollution because of vehicle exhaust,"New energy vehicles"is not a new con...In order to solve the problem effectively that increasing car ownership relies on limited resources like oil and the resulting environmental pollution because of vehicle exhaust,"New energy vehicles"is not a new conception which is mentioned frequently and has been used in practical applications in our daily life. As a typical representative of the use of new energy vehicles,Prius,a kind of gas-electric hybrid cars which are made by Toyota is a very typical type in technique and application. Using Prius as an example,we will focus on its chemical reaction principle of electrical energy storage device and evaluation parameters,the structure of driving motors and gives the dqmodel of the electrical machine in dqcoordinates,the structure of dynamic coupling device,convertor assembly which including four kinds of convertor and its function,finally,introducing the working principles and characteristics of the system assembly in this paper.展开更多
基金supported by the Research Fund Program of the Guangdong Provincial Key Laboratory of Fuel Cell Technology。
文摘Because of their unique mechanical and electrical properties,zinc oxide(ZnO)nanowires are used widely in microscopic and nanoscopic devices and structures,but characterizing them remains challenging.In this paper,two pick-up strategies are proposed for characterizing the electrical properties of ZnO nanowires using SEM equipped with a nanomanipulator.To pick up nanowires efficiently,direct sampling is compared with electrification fusing,and experiments show that direct sampling is more stable while electrification fusing is more efficient.ZnO nanowires have cut-off properties,and good Schottky contact with the tungsten probes was established.In piezoelectric experiments,the maximum piezoelectric voltage generated by an individual ZnO nanowire was 0.07 V,and its impedance decreased with increasing input signal frequency until it became stable.This work offers a technical reference for the pick-up and construction of nanomaterials and nanogeneration technology.
基金supported by the National Natural Science Foundation of China(Grant No.61973233).
文摘Nanowires have emerged as promising one-dimensional materials with which to construct various nanocircuits and nanosensors.However,measuring the electrical properties of individual nanowires directly remains challenging because of their small size,thereby hindering the comprehensive understanding of nanowire-based device performance.A crucial factor in achieving reliable electrical characterization is establishing well-determined contact conditions between the nanowire sample and the electrodes,which becomes particularly difficult for soft nanowires.Introduced here is a novel technique for measuring the conductivity of an individual nanowire with the aid of automated nanomanipulation using an atomic force microscope.In this method,two nanowire segments cut from the same silver nanowire are positioned onto a pair of gold electrodes,serving as flexible nanoprobes to establish controllable contact with the sample.By changing the contact points along the nanowire sample,conductivity measurements can be performed on different regions,thereby eliminating the influence of contact resistance by analyzing multiple current–voltage curves.Using this approach,the resistivity of a 100-nm-diameter silver nanowire is determined to be 3.49×10^(−8)Ωm.
基金Project supported by the National Natural Science Foundation of China (Grant No 50671053)
文摘Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism.Tin powders are used to control oxygen concentration in the furnace,thereby assisting the growth of the tungsten oxide nanowires.The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires.All of the I-V curves observed are symmetric,which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires,such as the carrier concentration,the carrier mobility and the conductivity.
文摘The general analysis of the forward AC behavior of a semiconductor diode under series mode is pre- sented for the first time.A new method without any particular assumption to characterize a diode was developed. This method can accurately measure the dependence of series resistance, junction capacitance, junction vol- tage, ideality factor, and interfacial layer impedance on forward biases. The measurements confirm that the ne- gative capacitance (NC) of Schottky diode is an effect of the junction, and the interfacial layer can be consi- dered as a layer structure with nonlinear resistance and capacitance.
基金supported by MESTD Republic of Serbia (No. 451-03-68/2020-14/200024)
文摘In the last two decades a growing interest has been shown in the investigation of atmospheric pressure plasma jets(APPJs)that operate in contact with liquid samples.In order to form a complete picture about such experimental systems,it is necessary to perform detailed diagnostics of plasma jets,as one step that will enable the adjustment of system properties for applications in different areas.In this work,we conducted a detailed electrical characterisation of a plasma system configuration used for water treatment.A helium plasma jet,with a pin electrode powered by a continuous sine wave at a frequency of 330 k Hz,formed a streamer that was in contact with a distilled water sample.An electrical circuit allowed the monitoring of electrical signals supplied to the jet and also to the plasma itself.An electrical characterisation together with power consumption measurements was obtained by using two different methods.The first method was based on the direct measurements of voltage and current signals,while in the second method we used'Lissajous figures'.We compared these two methods when used for discharge power estimation and addressed their advantages and limitations.The results showed that both of these methods could be used to successfully determine power consumed by a discharge in contact with water,but only when taking into account power dissipation without plasma.
文摘Performance characteristics data of solar photovoltaic (PV) cell/module are conventionally obtained under standard testing conditions. In the present work, the performance of PV modules under extreme temperatures and insolations experienced in State of Qatar was utilized to aid presenting a simplified characterization approach for the special case of arid environmental conditions. The chosen model was the well-known single diode model with both series and parallel resistors for greater accuracy. The modeling technique was validated by comparing the numerically calculated electrical characteristics with experimentally obtained data using two approaches: a single indoor fixed monocrystalline PV module inside a solar simulation chamber which physically simulated different weather scenarios by changing irradiation intensities and temperature, and a set of outdoor fixed polycrystalline PV modules. The result of the indoor experiment was presented in form of performance curves, and the outdoor experiment results in a monthly accumulated power production chart format. Both illustration types showed acceptable tolerance.
基金Supported by the National Natural Science Foundation of China under Grant No 10404022, and the National Basic Research Programme of China under Grant No G2000067107.
文摘We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I - V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.
基金supported by the Italian Ministry of Education,Universities and Research(MIUR)through the PRIN 2017 program(Project No.2017PJ5XXX“MAGIC DUST”).
文摘Carbon nanoparticles(CNPs)have received considerable attention due to their exceptional qualities and adaptability.Their unique physical and chemical characteristics make them extremely intriguing as materials for numerous high-potential applications,such as electronics and gas sensing.This study focused on producing carbon-based nanomaterial devices by deposition of flame-formed carbon nanoparticles on a suitable substrate and investigating their gas-sensing properties.CNPs were produced in a fuel-rich laminar premixed ethylene/air flame and the collected CNP film was morphologically and electrically characterized.The electrical conductivity of the film was investigated as a function of ethanol concentration and amount of deposited material.Notably,CNP films exhibited high sensitivity to ambient ethanol gas concentrations,and rapid recovery times at room temperature,and showed a sensitivity increasing with the amount of deposited material and the surface complexity.Our findings demonstrate the high potential of combustion-generated CNPs as building materials for low-cost and portable ethanol sensors.
基金the Semiconductor Research Corporation and the U.S. National Science Foundation (Grant No. MRSEC DMR 0520495)
文摘This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks: 1) inelastic electron tunneling spectroscopy (IETS), 2) lateral profiling of threshold voltages, interface-trap density, and oxide charge density distributions along the channel of an MOSFET, and 3) pulse agitated substrate hot electron injection (PASHEI) technique for measuring trapping effects in the gate dielectric at low and modest gate voltages.
基金Work supported by The National Natural Science Foundation of China.
文摘Polyperfluorobutyne-2 (PPFB), a conjugated polymer, was characterized with IR, UV-VIS, fluorescence spectra etc. The electrical conductivities of the polymer doped with various dopants were investigated. The effect of the molecular structure of PPFB on the electrical properties was discussed.
基金This study was supported by the Ministry of Science and ICT through the National Research Foundation,funded by the Korean government(NRF-2021R1A2C3005401,2020M3F3A2A01085792,2020R1A4A1019455,2020M3D1A 1110548)Samsung Display Corporation.
文摘Tin(Sn^(2+))-based halide perovskites have been developed as the most prom-ising alternatives to their toxic Pb-based counterparts in optoelectronic devices.However,the facile tin vacancy formation and easy oxidization characteristics make Sn^(2+)-based perovskites highly p-doped with excessive hole concentrations,which significantly hinder their applications.Herein,we demonstrate a potent hole inhibitor of antimony fluoride(SbF_(3)),which possesses a higher hole-suppression capability than conventional tin fluo-ride(SnF_(2)).A small amount of SbF_(3) allows a wide range of hole-density modulation with no or less SnF_(2) addition,thus mitigating the negative effects of using only SnF_(2).A SnF_(2)/SbF_(3) co-additive approach was further developed to achieve high-performance Sn 2+perovskite thin-film transis-tors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF_(2).We expect that the SbF 3 hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn^(2+)-perovskite optoelectronic devices.
基金supported by Natural Science Foundation of Henan Province(under Grant No.211B580001)Henan Province Key Project(under Grant No.122102210045)Henan Polytechnic University Doctoral Foundtion(under Grant No.B2010-12)
文摘In order to solve the problem effectively that increasing car ownership relies on limited resources like oil and the resulting environmental pollution because of vehicle exhaust,"New energy vehicles"is not a new conception which is mentioned frequently and has been used in practical applications in our daily life. As a typical representative of the use of new energy vehicles,Prius,a kind of gas-electric hybrid cars which are made by Toyota is a very typical type in technique and application. Using Prius as an example,we will focus on its chemical reaction principle of electrical energy storage device and evaluation parameters,the structure of driving motors and gives the dqmodel of the electrical machine in dqcoordinates,the structure of dynamic coupling device,convertor assembly which including four kinds of convertor and its function,finally,introducing the working principles and characteristics of the system assembly in this paper.