Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for ...Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.展开更多
We report optimal phase modulation based on enhanced electro–optic effects in a Mach–Zehnder（MZ） modulator constructed by AlGaAs/GaAs coupled double quantum well（CDQW） waveguides with optical gain. The net chang...We report optimal phase modulation based on enhanced electro–optic effects in a Mach–Zehnder（MZ） modulator constructed by AlGaAs/GaAs coupled double quantum well（CDQW） waveguides with optical gain. The net change of refractive indexes between two arms of the CDQW MZ modulator is derived by both the electronic polarization method and the normal-surface method. The numerical results show that very large refractive index change over 10^（-1） can be obtained, making the phase modulation in the CDQW MZ modulator very highly efficient. It is desirable and important that a very small voltage-length product for π phase shift, V_π× L_0= 0.0226 V · mm, is obtained by optimizing bias electric field and CDQW structural parameters, which is about seven times smaller than that in single quantum-well MZ modulators.These properties open an avenue for CDQW nanostructures in device applications such as electro–optical switches and phase modulators.展开更多
文摘Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.
基金Project supported by the National Natural Science Foundation of China(Grant No.11474106)the Natural Science Foundation of Guangdong Province,China(Grant No.2016A030313439)the Science and Technology Program of Guangzhou City,China(Grant No.201707010403)
文摘We report optimal phase modulation based on enhanced electro–optic effects in a Mach–Zehnder（MZ） modulator constructed by AlGaAs/GaAs coupled double quantum well（CDQW） waveguides with optical gain. The net change of refractive indexes between two arms of the CDQW MZ modulator is derived by both the electronic polarization method and the normal-surface method. The numerical results show that very large refractive index change over 10^（-1） can be obtained, making the phase modulation in the CDQW MZ modulator very highly efficient. It is desirable and important that a very small voltage-length product for π phase shift, V_π× L_0= 0.0226 V · mm, is obtained by optimizing bias electric field and CDQW structural parameters, which is about seven times smaller than that in single quantum-well MZ modulators.These properties open an avenue for CDQW nanostructures in device applications such as electro–optical switches and phase modulators.
