A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is exp...A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.展开更多
We present an AIInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition （ALD） Al2O3 dielectric layer and a 0.3 μm field-plate （FP）-MOS-HEMT. Compared with a conventional AIInN/AlN/GaN HEMT （HEMT） wi...We present an AIInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition （ALD） Al2O3 dielectric layer and a 0.3 μm field-plate （FP）-MOS-HEMT. Compared with a conventional AIInN/AlN/GaN HEMT （HEMT） with the same dimensions, a FP-MOS-HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction （by about one order of magnitude） and the forward direction （by more than two orders of magnitude）. Moreover, the peak extrinsic transconductance of the FP-MOS-HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance-voltage （C-V） curve of the FP-MOS-HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170V/#m and a negligible double-pulse current collapse is achieved in the FP-MOS-HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS-HEMT to deliver high currents and power densities in high power microwave technologies.展开更多
基金This work was supported by the National Nature Science Foundation of China under Grant No.60436030.
文摘A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the self-shielding structure.
基金Project supported by the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000925002)the National Key Science and Technology Special Project(Grant No.2008ZX01002-002)+1 种基金the National Natural Science Foundation of China(Grant Nos.60736033,60976068 and 61076097)New Teacher Foundation for Doctoral Program of Ministry of Education of China(Grant No.200807011012)
文摘We present an AIInN/AlN/GaN MOS-HEMT with a 3 nm ultra-thin atomic layer deposition （ALD） Al2O3 dielectric layer and a 0.3 μm field-plate （FP）-MOS-HEMT. Compared with a conventional AIInN/AlN/GaN HEMT （HEMT） with the same dimensions, a FP-MOS-HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction （by about one order of magnitude） and the forward direction （by more than two orders of magnitude）. Moreover, the peak extrinsic transconductance of the FP-MOS-HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance-voltage （C-V） curve of the FP-MOS-HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170V/#m and a negligible double-pulse current collapse is achieved in the FP-MOS-HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS-HEMT to deliver high currents and power densities in high power microwave technologies.
