Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators

High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full use of the advant-ages of organic electro-optic(OEO)materials(e.g.high electro-optic coefficient,fast response speed,high bandwidth,easy pro-cessing/integration and low cost)have attracted considerable attention.In this paper,we introduce a series of high-perform-ance OEO materials that exhibit good properties in electro-optic activity and thermal stability.In addition,the recent progress of organic-based hybrid electro-optic devices is reviewed,including photonic crystal-organic hybrid(PCOH),silicon-organic hy-brid(SOH)and plasmonic-organic hybrid(POH)modulators.A high-performance integrated optical platform based on OEO ma-terials is a promising solution for growing high speeds and low power consumption in compact sizes.

Measurement of Frequency Shift Characteristics Based on LiNbO_3 Waveguide Electro-Optic Intensity Modulator

High-speed and wide-band LiNbO3 waveguide electro-optic intensity modulator has drawn great attention in the field of optical fiber communication and sensor. This paper reports the research results on the measurement of frequency shift characteristics of Mach-Zehnder electro-optic intensity modulator. Two measurement methods of frequency shift characteristics for high and low frequency modulations are studied in theory and experiment and demonstrate different results. The realization of a multi-wavelength optical source based on Mach-Zehnder electro-optic intensity modulator has been introduced. The technique to reach the maximum intensity for interesting shift frequency, particularly for heterodyne detection of Brillouin distributed optical fiber sensing, has been given.

Low-power electro-optic phase modulator based on multilayer graphene/silicon nitride waveguide

Electro-optic modulator is a key component for on-chip optical signal processing.An electro-optic phase modulator based on multilayer graphene embedded in silicon nitride waveguide is demonstrated to fulfill low-power operation.Finite element method is adopted to investigate the interaction enhancement between the graphene flake and the optical mode.The impact of multilayer graphene on the performance of phase modulator is studied comprehensively.Simulation results show that the modulation efficiency improves with the increment of graphene layer number,as well as the modulation length.The 3-dB bandwidth of around 48 GHz is independent of graphene layer number and length.Compared to modulator with two-or four-layer graphene,the six-layer graphene/silicon nitride waveguide modulator can realizeπphase shift at a low-power consumption of 14 fJ/bit when the modulation length is 240μm.

Analysis of electro-optical intensity modulator for bunch arrival-time monitor at SXFEL

A bunch arrival-time monitor(BAM) based on an electro-optical intensity modulation scheme is currently under development at Shanghai Soft X-ray Free-Electron Laser to meet the high-resolution requirements for bunch stability. The BAM uses a radio frequency signal generated by a pickup cavity to modulate the reference laser pulses in an electro-optical intensity modulator(EOM), and the bunch arrival-time information is derived from the amplitude change of the laser pulse after laser pulse modulation.EOM is a key optical component in the BAM system.Through the basic principle analysis of BAM, many parameters of the EOM are observed to affect the measurement resolution of the BAM system. Therefore, a systematic analysis of the EOM is crucial. In this paper, we present two schemes to compare and analyze an EOM and provide a reference for selecting a new version of the EOM.

Magneto and Electro-Optic Intensity Modulator Based on Liquid Crystal and Magnetic Fluid Filled Photonic Crystal Fiber

We propose a novel light intensity modulator based on magnetic fluid and liquid crystal（LC） filled photonic crystal fibers（PCFs）. The influences of electric and magnetic fields on the transmission intensity are theoretically and experimentally analyzed and investigated. Both the electric and magnetic fields can manipulate the molecular arrangement of LC to array a certain angle without changing the refractive index of the LC. Therefore, light loss in the PCF varies with the electric and magnetic fields whereas the peak wavelengths remain constant. The experimental results show that the transmission intensity decreases with the increase of the electric and magnetic fields. The cut-off electric field is 0.899 V/um at 20 Hz and the cut-off magnetic field is 195 m T. This simple and compacted optical modulator will have a great prospect in sensing applications.

Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction

The novel BaTiO3/BiFeO3/TiO2 multilayer heterojunction is prepared on a fluorine-doped tinoxide(FTO) substrate by the sol–gel method. The results indicate that the Pt/Ba TiO3/BiFeO3/TiO2/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current(SCLC) effect. After the comprehensive analysis of the band diagram and the P–E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarizationmodulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state(RS), which is formed by the double ferroelectric layer Ba TiO3/BiFeO3 under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory(RRAM) devices based on ferroelectric materials.

Simulation design of thin film lithium niobate electro-optic modulator with bimetallic layer electrodes

Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integration compared with conventional bulk lithium niobate modulator.However,because the electrode gap of the lithium niobate film modulator is very narrow,when the microwave frequency gets higher,it leads to higher microwave loss,and the electro-optical performance of the modulator will be greatly reduced.Here,we propose a thin film lithium niobate electro-optic modulator with a bimetallic layer electrode structure to achieve microwave loss less than 8 dB/cm in the range of 200 GHz,exhibiting a voltage-length product of 1.1 V·cm and a 3 dB electro-optic bandwidth greater than 160 GHz.High-speed data transmission test has been performed,showing good performance.

An autobias control system for the electro optic modulator used in a quantum key distribution system

In a quantum key distribution system, it is crucial to keep the extinction ratio of the coherent pulses stable. This means that the direct current bias point of the electro-optic modulator （EOM） used for generating coherent pulses must be locked. In this paper, an autobias control system based on a lock-in-amplifier for the EOM is introduced. Its drift information extracting theory and control method are analyzed comprehensively. The long term drift of the extinction ratio of the coherent pulses is measured by a single photon detector, which indicates that the autobias control system is effective for stabilizing the bias point of the EOM.

通用电机控制模块及其驱动软件的研发

电动车的研发是目前的研究热点,它给人们的生活带来了无尽的想象空间,其中各种车辆辅助操作系统为电动车提供了多种保障。提出了一种通用的电机控制模块及其驱动软件的实现原理,它可以方便地接入各种电动车,包括电动汽车和电动自行车,从而给电动自行车辆提供一种低成本的电机解决方案。该系统除了具有行驶、转弯、加速和制动等基本驾驶动作外,还可通过卫星连接,对车辆精准定位。该系统与对应的手机应用软件连接,还能实现多种附加功能,如语音操控、远程操控等功能。

高频纳秒脉冲调制器的分立磁耦合驱动器设计

随着高压纳秒固态脉冲发生器在生物、工业和环境等领域的应用日益广泛和深入,脉冲波形、电压幅值、脉冲持续时间、脉冲重复频率等参数已成为特定脉冲功率应用所需的基本可控变量。为了进一步减小电源的体积、降低成本,提出一款以正极性Marx为主电路、多个脉冲变压器为核心驱动器、具有纳秒级前沿高重复频率的高压纳秒脉冲调制器。提出的驱动器结构紧凑,无需提供多路隔离供电的驱动电源,可以在高重复频率下实现两个金属氧化物半导体场效应晶体管(MOSFETs)的栅极电压快速同步上升和下降,获得百纳秒以内、幅值可控的栅极驱动电压。不仅最大脉宽不受磁芯饱和的限制,而且负偏置电压使开关管可控关断,同时在一定程度上避免了电流流过MOSFET米勒电容而引起的寄生导通,提高了电路工作的可靠性。此外,研究了不同匝数和磁芯材料对驱动波形的影响。搭建了一台14级脉冲调制器样机,测试结果表明,基于该驱动器下的调制器输出电压和脉宽都连续可调,具有改变脉冲轮廓的能力,最大输出电压可达5.5 kV,脉宽调节范围为100 ns~50 ms,最小上升时间约18 ns,重复频率为100 kHz。

NPC三电平IGBT模块驱动电路设计及动态特性测试

二极管中点钳位NPC(neutral point clamped)三电平逆变器具备较低的开关应力、谐波分量和较好的抗干扰能力,促使其成为光伏、储能等新能源领域DC-AC变换器的主要拓扑之一。针对大功率应用场景中普遍采用的NPC三电平IGBT功率半导体模块开展研究,分析NPC三电平功率模块的换流回路,并据此给出对应换流回路的寄生参数精准仿真评估方法。依据换流回路寄生参数最小原则,设计适用于NPC三电平功率半导体模块的动态特性测试电路。根据换流回路以及电路工作原理,设计NPC三电平功率模块的驱动电路,并给出增强驱动电流、防直通及死区时间可调的驱动方案。最后,通过对NPC三电平IGBT模块的动态测试,详细评估了不同工况下功率器件的动态损耗。

Robust thin-film lithium niobate modulator on a silicon substrate with backside holes

Recently,Mach–Zehnder modulators based on thin-film lithium niobate have attracted broad interest for their potential for high modulation bandwidth,low insertion loss,high extinction ratio,and high modulation efficiency.The periodic capacitively loaded traveling-wave electrode is optimally adopted for ultimate high-performances in this type of modulator.However,such an electrode structure on a silicon substrate still suffers from the velocity mismatch and substrate leakage loss for microwave signals.Here,we introduce a thin-film lithium niobate modulator structure using this periodic capacitively loaded electrode on a silicon substrate.Backside holes in the silicon substrate are prepared to solve robustly the above difficulties.The fabricated device exhibits an insertion loss of 0.9 dB,a halfwave-voltage–length product of 2.18 V·cm,and an ultra-wide bandwidth well exceeding 67 GHz for a 10-mm-long device.Data transmissions with rates up to 112 Gb/s are demonstrated.The proposed structure and fabrication strategy are compatible for other types of monolithic and heterogeneous integrated thin-film lithium niobate modulators on a silicon substrate.

Potassium tantalate niobate crystals:Efficient quadratic electro-optic materials and their laser modulation technology

Electro-optic(EO)crystals are important material for all-solid-state laser technology,which can be used to fabricate various laser modulators,such as EO switches,laser deflectors,and optical waveguide.The improvements in new high-efficiency EO crystal materials have held great significance to the development of laser technology.Potassium tantalate niobate(KTN)is a popular multifunctional crystal because of its remarkable and excellent quadratic EO effect.KTN EO modulation technology offers numerous advantages,such as high efficiency,good stability,a quick response time,and inertia-free characteristics.In this paper,we summarize the research progress of KTN series crystals systemically,including the theoretical exploration on quadratic EO effect,solid-melt crystal growth technique,comprehensive physical characterization,new physical effect and mechanisms exploration,new EO devices development and design.The EO modulation technique based on the Kerr effect of KTN series crystal offers obvious advantages in reducing the drive voltage and device size,which could better meet the developmental needs of future lasers with a wide wavelength,miniaturization,and integration.This may provide theoretical guidance and an experimental basis for the design and development of new EO crystal devices and promote the development of laser technology.

列车司机手势识别方法研究

按照司乘标准执行规定的手势是列车司机驾驶操作的重要环节,通过对司机手势进行检测,能够有效评估列车司机的驾驶状态和操作质量,保证列车行车安全。传统人工检查方式效率低,难以满足实际需求,现有的手势识别算法存在模型参数量大、检测精度较低、检测速度慢等问题。随着智能铁路的发展,利用深度学习方法构建轻量化、高效、高精度的列车司机手势识别模型逐渐成为行业发展需求。针对上述需求,提出一种基于改进YOLOv5的列车司机手势识别模型。首先,引入轻量化卷积PConv改进YOLOv5中的C3模块,降低检测网络的参数量和计算量,提升模型检测效率,并在其后添加CBAM模块,加强重要特征信息,抑制无关信息的干扰,强化检测网络特征提取能力;其次,在颈部层引入BiFPN网络结构替换PANet网络结构,增强不同尺度特征的融合能力,同时通过新增小目标检测层,提高模型对小目标的检测能力;最后,选择Focal-EIoU作为边界框损失优化模型损失函数,加快模型的收敛速度,提高手势定位精度。实验结果表明,改进模型在测试集下mAP@0.5可达97.7%,平均检测时间为23.2 ms,相较于YOLOv5计算量降低了23.1%,mAP@0.5和平均检测时间分别提升了0.6个百分点和7.1 ms。所提模型可在降低参数量和计算量的同时有效提高检测精度和检测效率,可为列车司机手势识别提供新思路。

Greatly enhanced electro-optic modulation efficiency in titanium in-diffusion PIN-PMN-PT waveguide

Electro-optic modulators,which convert electrical signals onto the transmission light,are key devices in electro-optic modulating systems.Modulation efficiency is one of the most important parameters of an electro-optic modulator,which directly determines the footprint and power consumption of the device.Generally,modulation efficiency strongly depends on the electro-optic response of the crystal.The Pb(In_(1/2)Nb_(1/2))O_(3)-Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3)(PIN-PMN-PT)single crystal with giant electro-optic coefficient(λ_(c))and high transparency indicates the potential to achieve greatly enhanced modulation efficiency.In this study,a prototype PIN-PMN-PT phase modulator was fabricated based on a titanium(Ti)in-diffusion waveguide,which is reported for the first time.The influences of titanium in-diffusion on the composition and domain structure of the PIN-PMN-PT single crystal were studied by transmission electron microscopy(TEM)and piezoelectric force microscopy(PFM),respectively.Finally,a half-wave voltage(V_(π))of 2.3 V was obtained using a device with 6-mm-long(L)electrodes.Furthermore,the electro-optic modulation efficiency(V_(π)L)was calculated as 1.38 V-cm,which was approximately one order of magnitude lower than that of commercial lithium niobate(LiNbO_(3),LN)phase modulators.Such enhanced modulation efficiency indicates more compact device and lower power consumption,which is of great significance for electro-optic modulation systems used in micro-fiber gyroscope,integrated photonic devices,etc.

Monolithic thin film lithium niobate electro-optic modulator with over 110 GHz bandwidth

High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with a 3 d B bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ~2.37 V · cm, a high extinction ratio of >23 d B, and the propagation loss of optical waveguides of ~0.2 d B/cm. Besides, six-level pulse amplitude modulation up to 250 Gb/s is successfully achieved.

Parallel generation of low-correlation wideband complex chaotic signals using CW laser and external-cavity laser with self-phase-modulated injection

A novel scheme for generating optical chaos is proposed and experimentally demonstrated,which supports to simultaneously produce two low-correlation chaotic signals with wideband spectrum and suppressed time-delay-signature(TDS).In the proposed scheme,we use the output of an external-cavity semiconductor laser(ECSL)as the driving signal of a phase modulator to modulate the output of a CW laser.Then the phase-modulated continuous-wave(CW)light is split into two parts,one is injected back into the ECSL that outputs one chaotic signal,while the other part is passed through a dispersion module for generating another chaotic signal simultaneously.The experimental results prove that the proposed scheme has three merits.Firstly,it can improve the bandwidth of ECSL-based chaos by several times,and simultaneously generate another wideband flat-spectrum chaotic signal.Secondly,the undesired TDS characteristics of the simultaneously-generated chaotic signals can be efficiently suppressed to an indistinguishable level within a wide parameter range,as such the complexities of the chaotic signals are considerably high.Thirdly,the correlation coefficient between these two simultaneously-generated chaotic signals is smaller than 0.1.The proposed scheme provides an attractive solution for parallel multiple chaos generation,and shows great potential for multiple channel chaos communications and multiple random bit generations.

The effect of conductor loss on half-wave voltage and modulation bandwidth of electro-optic modulators

In this paper, we theoretically deduce the expressions of half-wave voltage and 3-dB modulation bandwidth in which conductor loss is taken into account. The results suggest that it will affect the theoretical values of half-wave voltage and bandwidth as well as the optimized electrode's dimension whether considering the conductor loss or not. As an example, we present a Mach-Zehnder (MZ) type polymer waveguide amplitude modulator. The half-wave voltage increases by 1 V and the 3-dB bandwidth decreases by 30% when the conductor loss is taken into account. Besides, the effects of impedance mismatching and velocity mismatching between microwave and light wave on the half-wave voltage, and 3-dB bandwidth are discussed.

Electro-optic polymer ring resonator modulators [Invited]

Electro-optic(EO) ring resonator modulators have a number of communications and scientific applications, including analog optical links, optical signal processing, and frequency comb generation. Among the EO materials used to fabricate ring modulators, the EO polymer has many promising characteristics, including a high EO coefficient of 100–200 pm/V(3–7 times larger than that of Li Nb O3), an ultrafast EO response time(< 10 fs), a low dielectric constant(3 to 4) with very little dispersion up to at least 250 GHz, and a straightforward spin-coating fabrication process. These inherent characteristics will be able to combine excellent EO properties with simple processing in achieving exceptional performance in a variety of high-speed optical modulation and sensing devices. This review focuses on the research and recent development of ring resonator modulators based on EO polymers. The first part describes the operation principle of EO ring resonator modulators, such as modulation mechanism, EO tunability, and 3 d B bandwidth. Subsequently, the emphasis is placed on the discussion of the ring modulators with EO polymers as the waveguide core and the improvement of EO modulation by using an EO polymer/titanium dioxide hybrid core. At the end, a series of EO polymers on silicon platforms including slot modulators, etching-free modulators, and athermal modulators are reviewed.

Broad-band spatial light modulation with dual epsilon-near-zero modes

Epsilon-near-zero(ENZ)modes have attracted extensive interests due to its ultrasmall mode volume resulting in ex-tremely strong light-matter interaction(LMI)for active optoelectronic devices.The ENZ modes can be electrically toggled between on and off states with a classic metal-insulator-semiconductor(MIS)configuration and therefore allow access to electro-absorption(E-A)modulation.Relying on the quantum confinement of charge-carriers in the doped semiconductor,the fundamental limitation of achieving high modulation efficiency with MIS junction is that only a nanometer-thin ENZ confinement layer can contribute to the strength of E-A.Further,for the ENZ based spatial light modulation,the require-ment of resonant coupling inevitably leads to small absolute modulation depth and limited spectral bandwidth as restric-ted by the properties of the plasmonic or high-Q resonance systems.In this paper,we proposed and demonstrated a dual-ENZ mode scheme for spatial light modulation with a TCOs/dielectric/silicon nanotrench configuration for the first time.Such a SIS junction can build up two distinct ENZ layers arising from the induced charge-carriers of opposite polar-ities adjacent to both faces of the dielectric layer.The non-resonant and low-loss deep nanotrench framework allows the free space light to be modulated efficiently via interaction of dual ENZ modes in an elongated manner.Our theoretical and experimental studies reveal that the dual ENZ mode scheme in the SIS configuration leverages the large modulation depth,extended spectral bandwidth together with high speed switching,thus holding great promise for achieving electric-ally addressed spatial light modulation in near-to mid-infrared regions.