Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs mat...Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.展开更多
This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells ...This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.展开更多
文摘Electroabsorption modulators（EAMs） with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells（AICD-SQWs） based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive（CS） to tensile（TS）.The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kronig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032%to 0.05%（TS） and-0.52% to-0.50%（CS）,respectively.
文摘This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.
