Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in ...Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.展开更多
ZnSe is one of the important and excellent II-VI semiconductor materials, which has direct transition band structure. In this paper, ZnSe thin films were prepared by an electrochemical deposition method, and the forma...ZnSe is one of the important and excellent II-VI semiconductor materials, which has direct transition band structure. In this paper, ZnSe thin films were prepared by an electrochemical deposition method, and the formation mechanism of ZnSe was studied systematically. Voltammerry and chronoamperometry combined with X-ray diffraction （XRD） and Raman techniques were used to analyze the deposition processes. It is found that the substrate and deposition potentials have a great influence on the phase composition of deposited thin film, and Zn substrate is beneficial to the preparation ZnSe films. Strong selenium-substrate interaction results in the formation of selenimn compounds involving electrode materials. The addition of Zn（II） source can affect the reduction potential of Se, and results in the change of reducing mechanism of Se（0） from Se（IV）. Se（0） formed from H2Se because the formation of H2Se is more active than forming Se（0） directly from Se（IV）, and H2Se can recombine with the substrate material, forming selenium-substrate compounds more quickly.展开更多
文摘Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.
基金financially supported by the National Natural Science Foundation of China (Nos.51574071. 51322406 and 21501023)the Fundamental Research Funds for the Central Universities(No.140205001)
文摘ZnSe is one of the important and excellent II-VI semiconductor materials, which has direct transition band structure. In this paper, ZnSe thin films were prepared by an electrochemical deposition method, and the formation mechanism of ZnSe was studied systematically. Voltammerry and chronoamperometry combined with X-ray diffraction （XRD） and Raman techniques were used to analyze the deposition processes. It is found that the substrate and deposition potentials have a great influence on the phase composition of deposited thin film, and Zn substrate is beneficial to the preparation ZnSe films. Strong selenium-substrate interaction results in the formation of selenimn compounds involving electrode materials. The addition of Zn（II） source can affect the reduction potential of Se, and results in the change of reducing mechanism of Se（0） from Se（IV）. Se（0） formed from H2Se because the formation of H2Se is more active than forming Se（0） directly from Se（IV）, and H2Se can recombine with the substrate material, forming selenium-substrate compounds more quickly.
