A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based...This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.展开更多
The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and ...The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and the PVK emissive layer.It is believed that the PEO layer plays a key role in enhancing the device performance.In comparison to the device with Ca/Al as the cathode,the performance of the PLED with PEO/Ca/Al cathode,including the driving voltage,luminance efficiency is significantly improved.These improvements are attributed to the introduction of a thin layer of PEO that can lower the interfacial barrier and facilitate electron injection.展开更多
The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as te...The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level （1 A/cm2 ） with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.展开更多
White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The...White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK：Cz6F blends are studied. Single and double layer devices are fabri- cated by using PVK： Cz6F blends, and the device with the configuration of indium tin oxide （ITO）/PVK：Cz6F/ tris（8-hydroxyquinolinate）aluminium （Alq3）/LiF/A1 exhibits white light emission with Commission Internationale de l＇Eclairage chromaticity coordinates of （0.30, 0.33） and a brightness of 402 cd/m^2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK：Cz6F blend films.展开更多
In this work, we report the preparation of a series of electroluminescent （EL） devices based on a high-performance polymer, poly（p-phenylene benzobisoxazole） （PBO）, and their optoelectronic properties, which hav...In this work, we report the preparation of a series of electroluminescent （EL） devices based on a high-performance polymer, poly（p-phenylene benzobisoxazole） （PBO）, and their optoelectronic properties, which have been rarely explored. The device structure is optimised using a complex cathode structure of tris-（8-hydoxyquinoline） aluminium （Alq3）/LiF/Al. By tuning the thickness of the Alq3 layer, we improve the device efficiency dramatically in an optimized condition. Further analysis reveals that the Alq3 layer in the complex cathode structure acts as a hole blocker in addition to its electron-injection role. A green light emission with a maximum brightness of 8.7×103 cd/m2 and a moderate current efficiency of 4.8 cd/A is obtained. These values are the highest ever reported for PBO devices. The high operational stability demonstrated by the present device makes it a promising tool for display and lighting applications. A new material is added to the selection of polymers used in this field up to now.展开更多
Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator l...Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator layer is introduced between the indium tin oxide and organic layer to define the area of the active device. Here, we have inserted a layer of photoresist (thickness ~ 200 nm) at the edge of patterned anode (indium tin oxide) and between the anode and hole transport layer (Poly 3, 4-ethylenedioxythiophene poly styrenesulfonate) to examine its effect on the leakage current of organic light-emitting diode and on the electron-hole recombination ratio in the emission area, as a result increasing the luminance efficiency. Current leakage causes the loss of charges, which adversely affects the recombination of electrons and holes in the emitting zone and results in poorer luminance efficiency. In this paper, we report the effect of pixellization on current density-voltage, luminescence-voltage and degradation behavior of single layer Poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylene vinylene] based organic light-emitting diodes. Devices with isolation layer have 30% higher external electroluminescence quantum efficiency and reduced device degradation in comparison to without isolation layer.展开更多
A tri\|coordinated 8\|hydroxyquinolato\|\%p\%\|methylphenolato\|zinc complex was first synthesized, and its photoluminescent spectra(PL) and UV absorption spectra were investigated. Double layer organic lighting diode...A tri\|coordinated 8\|hydroxyquinolato\|\%p\%\|methylphenolato\|zinc complex was first synthesized, and its photoluminescent spectra(PL) and UV absorption spectra were investigated. Double layer organic lighting diodes(OLEDs), ITO/PVK∶ZnqP(80 nm)/Mg∶Ag was fabricated by using this complex as the luminescent layer. Green electroluminescence(EL) was observed, and this complex was found as a good electroluminescence emitting material.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported by the National Natural Science Foundation of China(Grant No.50675130)the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAE01B14)the Program for the New Century Excellent Talents in University(Grant No.NCET-07-0535)
文摘This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.
基金the Office of R&D,National Cheng Kung University,Taiwan
文摘The performance of polymer light emitting devices(PLEDs)based on polyvinyl carbazole(PVK)is improved by introducing a nanoscale interfacial thin layer,made of poly(ethylene oxide)(PEO),between the calcium cathode and the PVK emissive layer.It is believed that the PEO layer plays a key role in enhancing the device performance.In comparison to the device with Ca/Al as the cathode,the performance of the PLED with PEO/Ca/Al cathode,including the driving voltage,luminance efficiency is significantly improved.These improvements are attributed to the introduction of a thin layer of PEO that can lower the interfacial barrier and facilitate electron injection.
基金Project supported by the State Key Program for Basic Research of China (Grant Nos. 2010CB327504, 2011CB301900, and 2011CB922100)the National Natural Science Foundation of China (Grant Nos. 60825401, 60936004, and 11104130)the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012110, BK2011556, and BK2011050)
文摘The efficiency droop behaviors of GaN-based green light-emitting diodes （LEDs） are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level （1 A/cm2 ） with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.
基金Project supported by the National Basic Research Program of China (Grant No. 2009CB623605)the National Natural Science Foundation of China (Grant No. 50673035)Program for New Century Excellent Talents in Universities of Ministry of Education,the 111 Project (Grant No. B06009)
文摘White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK：Cz6F blends are studied. Single and double layer devices are fabri- cated by using PVK： Cz6F blends, and the device with the configuration of indium tin oxide （ITO）/PVK：Cz6F/ tris（8-hydroxyquinolinate）aluminium （Alq3）/LiF/A1 exhibits white light emission with Commission Internationale de l＇Eclairage chromaticity coordinates of （0.30, 0.33） and a brightness of 402 cd/m^2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK：Cz6F blend films.
基金Project supported by the National Natural Science Foundation of China(Grant No.21174016)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120009110031)the 111 Project of China(Grant No.B08002)
文摘In this work, we report the preparation of a series of electroluminescent （EL） devices based on a high-performance polymer, poly（p-phenylene benzobisoxazole） （PBO）, and their optoelectronic properties, which have been rarely explored. The device structure is optimised using a complex cathode structure of tris-（8-hydoxyquinoline） aluminium （Alq3）/LiF/Al. By tuning the thickness of the Alq3 layer, we improve the device efficiency dramatically in an optimized condition. Further analysis reveals that the Alq3 layer in the complex cathode structure acts as a hole blocker in addition to its electron-injection role. A green light emission with a maximum brightness of 8.7×103 cd/m2 and a moderate current efficiency of 4.8 cd/A is obtained. These values are the highest ever reported for PBO devices. The high operational stability demonstrated by the present device makes it a promising tool for display and lighting applications. A new material is added to the selection of polymers used in this field up to now.
文摘Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator layer is introduced between the indium tin oxide and organic layer to define the area of the active device. Here, we have inserted a layer of photoresist (thickness ~ 200 nm) at the edge of patterned anode (indium tin oxide) and between the anode and hole transport layer (Poly 3, 4-ethylenedioxythiophene poly styrenesulfonate) to examine its effect on the leakage current of organic light-emitting diode and on the electron-hole recombination ratio in the emission area, as a result increasing the luminance efficiency. Current leakage causes the loss of charges, which adversely affects the recombination of electrons and holes in the emitting zone and results in poorer luminance efficiency. In this paper, we report the effect of pixellization on current density-voltage, luminescence-voltage and degradation behavior of single layer Poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylene vinylene] based organic light-emitting diodes. Devices with isolation layer have 30% higher external electroluminescence quantum efficiency and reduced device degradation in comparison to without isolation layer.
基金Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou (No. 202255464)“2+5” Significant Academic Hubs and Platforms of Guangzhou University (PT252022016)。
文摘A tri\|coordinated 8\|hydroxyquinolato\|\%p\%\|methylphenolato\|zinc complex was first synthesized, and its photoluminescent spectra(PL) and UV absorption spectra were investigated. Double layer organic lighting diodes(OLEDs), ITO/PVK∶ZnqP(80 nm)/Mg∶Ag was fabricated by using this complex as the luminescent layer. Green electroluminescence(EL) was observed, and this complex was found as a good electroluminescence emitting material.
基金Project supported by the Key Project of National Natural Science Foundation of China(50532050)the"973"program (2006CB604906)+1 种基金the Knowledge Innovation Project of Chinese Academy of Sciencesthe National Natural Science Foundation of China(60806002,60506014,10874178,10674133,60776011)~~
