Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl ...Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.展开更多
Paul Scherrer Institut hosts the Proton Irradiation Facility used for radiation effects studies and exposure tests in preparation of satellite missions for the European Space Agency. The facility allows for realistic ...Paul Scherrer Institut hosts the Proton Irradiation Facility used for radiation effects studies and exposure tests in preparation of satellite missions for the European Space Agency. The facility allows for realistic simulation of the space proton spectra in the energy range from 6 MeV up to 230 MeV with exposure fluxes ranging from very low up to as high as 109 p/cm2/sec. Recently, approved ESA mission to Jupiter—JUICE—also brought a need for tests with high energy electron beams. For this purpose, another facility was established in the PSI secondary beam area piM1. Secondary particles are produced on the thick carbon target hit by energetic proton beam. Dedicated beam optics enables selection of the particle charge and momentum and guides them to the tests area. Characterization of electron beams at various momenta was performed with respect to their intensity, profiles and contamination by pions and muons. Electron fluxes ranging from 1.5 × 103/cm2/s at 20 MeV/c to 2.3 × 106/cm2/s at 345 MeV/c with gaussian beam profiles with FWHM of about 4 cm were measured. Beam contamination with heavier particles becomes negligible for all momenta lower than 115 MeV/c. This allows for using them for components and shielding characterization and detector calibration experiments. Several such experiments have been already performed utilizing available beam time of few weeks per year.展开更多
基金Project(52175445) supported by the National Natural Science Foundation of ChinaProject(ZZYJKT2020-09) supported by the State Key Laboratory of High Performance Complex Manufacturing (Central South University),China+1 种基金Projects(2020JJ4247, 2022JJ30743) supported by the Natural Foundation of Hunan Province,ChinaProject(1053320190337) supported by the Fundamental Research Funds for the Central University,China。
文摘Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.
文摘Paul Scherrer Institut hosts the Proton Irradiation Facility used for radiation effects studies and exposure tests in preparation of satellite missions for the European Space Agency. The facility allows for realistic simulation of the space proton spectra in the energy range from 6 MeV up to 230 MeV with exposure fluxes ranging from very low up to as high as 109 p/cm2/sec. Recently, approved ESA mission to Jupiter—JUICE—also brought a need for tests with high energy electron beams. For this purpose, another facility was established in the PSI secondary beam area piM1. Secondary particles are produced on the thick carbon target hit by energetic proton beam. Dedicated beam optics enables selection of the particle charge and momentum and guides them to the tests area. Characterization of electron beams at various momenta was performed with respect to their intensity, profiles and contamination by pions and muons. Electron fluxes ranging from 1.5 × 103/cm2/s at 20 MeV/c to 2.3 × 106/cm2/s at 345 MeV/c with gaussian beam profiles with FWHM of about 4 cm were measured. Beam contamination with heavier particles becomes negligible for all momenta lower than 115 MeV/c. This allows for using them for components and shielding characterization and detector calibration experiments. Several such experiments have been already performed utilizing available beam time of few weeks per year.
