Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Simulation of nonlinear behavior in an electron cyclotron resonance plasma

Some nonlinear behavior in electron cyclotron resonance plasma was investigated using a two-dimension hybrid-mode with self-consistent microwave absorption. The saturation,oscillations of plasma parameters (plasma density, potential, electron temperature) versus operating conditions (pressure, power) are discussed. Our simulation results are consistent qualitatively with many experimental measurements.

Correlation ofⅢ/Ⅴsemiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance

Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclotron resonance（ECR） were investigated and compared with the radial uniformity of the etch rate. The determination of the electronic properties of chlorine-and hydrogen-containing plasmas enabled the understanding of the pressure-dependent behavior of the plasma density and provided better insights into the electronic parameters of reactive etch gases. From the electrical evaluation of I（V） characteristics obtained using a Langmuir probe,plasmas of different compositions were investigated. The standard method of Druyvesteyn to derive the electron energy distribution functions by the second derivative of the I（V）characteristics was replaced by a mathematical model which has been evolved to be more robust against noise, mainly, because the first derivative of the I（V） characteristics is used. Special attention was given to the power of the energy dependence in the exponent. In particular, for plasmas that are generated by ECR with EM modes, the existence of Maxwellian distribution functions is not to be taken as a self-evident fact, but the bi-Maxwellian distribution was proven for Ar-and Kr-stabilized plasmas. In addition to the electron temperature, the global uniform discharge model has been shown to be useful for calculating the neutral gas temperature. To what extent the invasive method of using a Langmuir probe could be replaced with the noninvasive optical method of emission spectroscopy, particularly actinometry, was investigated,and the resulting data exhibited the same relative behavior as the Langmuir data. The correlation with etchrate data reveals the large chemical part of the removal process—most striking when the data is compared with etching in pure argon. Although the relative amount of the radial variation of plasma density and etch rate is approximately ？5%, the etch rate shows a slightly concave shape in contrast to the plasma density.

Deposition of High Quality GaN Film Under High ECR Plasma Density

Aim To investigate the influence of ion density( n i) on the deposition of wurtzite GaN films on the substrate of α Al 2O 3(0001) by electron cyclotron resonance plasma. Methods Langmuir probe measurement, Double crystal X ray diffraction and Hall measurement were used. Results The quality of GaN film strongly depended on its growth condition. The higher ion density resulted in a higher amount ratio of N/Ga and a lower background electron concentration of GaN film. When the GaN was prepared in the ion density of 2 0×10 11 cm -3 , the amount ratio of N/Ga was close to 1, the electron background density was 3 7×10 18 cm -3 and its full width at half magnitude(FWHM) was 16?arcmin. Conclusion The quality of GaN film can be improved by raising the plasma density.

Interaction between plasma and electromagnetic field in ion source of 10 cm ECR ion thruster

Through diagnosing the plasma density and calculating the intensity of microwave electric field,four 10 cm electron cyclotron resonance(ECR)ion sources with different magnetic field structures are studied to reveal the inside interaction between the plasma,magnetic field and microwave electric field.From the diagnosing result it can be found that the plasma density distribution is controlled by the plasma generation and electron loss volumes associated with the magnetic field and microwave power level.Based on the cold plasma hypothesis and diagnosing result,the microwave electric field intensity distribution in the plasma is calculated.The result shows that the plasma will significantly change the distribution of the microwave electric field intensity to form a bow shape.From the boundary region of the shape to the center,the electric field intensity varies from higher to lower and the diagnosed density inversely changes.If the bow and its inside lower electric field intensity region are close to the screen grid,the performance of ion beam extracting will be better.The study can provide useful information for the creating of 10 cm ECR ion source and understanding its mechanism.

Understanding hydrogen plasma processes based on the diagnostic results of 2.45 GHz ECRIS at Peking University

Optical emission spectroscopy（OES）, as a simple in situ method without disturbing the plasma, has been performed for the plasma diagnosis of a 2.45 GHz permanent magnet electron cyclotron resonance（PMECR） ion source at Peking University（PKU）. A spectrum measurement platform has been set up with the quartz-chamber electron cyclotron resonance（ECR） ion source [Patent Number： ZL 201110026605.4] and experiments were carried out recently. The electron temperature and electron density inside the ECR plasma chamber have been measured with the method of line intensity ratio of noble gas. Hydrogen plasma processes inside the discharge chamber are discussed based on the diagnostic results. What is more, the superiority of the method of line intensity ratio of noble gas is indicated with a comparison to line intensity ratio of hydrogen. Details will be presented in this paper.

自研28 GHz/50 kW回旋管实现长时间连续运行

介绍了中国工程物理研究院应用电子学研究所针对磁约束聚变装置电子回旋共振加热(ECRH)系统、重离子加速器电子回旋共振(ECR)离子源以及前沿科技探索应用研制的28 GHz/50 kW连续波回旋管最新实验结果。研究团队在2019年该回旋管实现50 kW/30 s运行的基础上,通过结构优化和稳定性设计验证,最终实现了在10~50 kW功率范围多个功率水平的稳定长时间连续运行,典型运行结果为16 kW/3000 s、26 kW/900 s、46 kW/1800 s、50 kW/300 s,特别在输出功率32 kW连续稳定工作了400 min。这是国内首次研制出小时级连续工作的中等功率回旋管。

双放电腔微波-ECR等离子体源增强磁控溅射沉积技术

因其设备简单、沉积速率高等特点 ,磁控溅射沉积技术被广泛地用于各种薄膜制备中 .但用反应磁控溅射制备化合物薄膜如氧化物、氮化物膜时 ,为了得到化学配比的膜层 ,薄膜生长表面的反应激活基团、离子等的密度必须足够大 .为此对原有的微波 -ECR等离子体源进行了改造 .研究了双放电腔微波 -ECR等离子体源增强磁控溅射的放电特性 ,并用该方法制备了氮化碳膜 .结果表明 :该方法是一种有效的制备化合物薄膜的技术 ;用该方法制备的氮化碳膜 。

使用电子回旋波共振等离子体源辅助中频磁控溅射沉积氧化铌薄膜

中频磁控溅射虽相较于电子束蒸发成膜质量更好,但不可避免仍然存在一部分颗粒物,将严重影响光学薄膜的质量和光学特性。研究了使用电子回旋波共振(ECWR)等离子体源作为辅助设备与中频磁控溅射相配合沉积的氧化铌薄膜,进行了等离子体诊断和薄膜表征。结果表明:在相同条件下,ECWR等离子体放电的氧化效果明显优于传统的感应耦合等离子体放电。ECWR等离子体源能够在较低压强的纯氧环境下稳定产生高密度等离子体,无须通过氩气作“引子”来激发维持氧气的稳定放电,展示了电子回旋波共振放电结构的优越性。沉积得到的非晶氧化铌薄膜光滑均匀且透射率达91%,能有效消除中频磁控溅射产生的颗粒物问题。通过透射率波峰位置对比发现纯氧ECWR放电样片出现红移,原因是其放电得到的薄膜均匀而致密,使光学禁带宽度向低能方向漂移出现带隙窄化。研究结果还揭示了离子源高密度、低能量特性与薄膜表面和光学特性之间的关系,为精密光学薄膜应用提供了新的解决方案。

Langmuir探针诊断微波ECR非平衡磁控溅射等离子体

利用朗谬尔探针诊断了ECR非平衡磁控溅射等离子体,给出了微观等离子体参量随宏观工艺参量变化关系。实验测得基片架附近等离子体密度达到1010～1011数量级,电子温度在(5～10)eV之间。随溅射靶功率变化,等离子体密度在130W时取得最大值;同样随微波源功率变化,等离子体密度在功率为850W时也达到最大值。电子温度、等离子体空间电位变化与等离子体密度呈相同趋势。

用于半导体加工的腔耦合－磁多极型ECR源的研究

本实验室研制出一台谐振腔耦合一多极场位形的电子回旋共振（ＥＣＲ）微波等离子体源（ＭＥＰ）。采用朗谬探针和离子能量分析器，测量了ＭＥＰ中Ａｒ等离子体的放电特性。实验结果表明．ＭＥＰ能在很宽的运行参数范围，高效率地产生具有较高密度、较低离子温度和空间电位的大面积均匀等离子体，特别适合于半导体加工应用研究。

氩气和氪气作为ECR中和器工质的性能比较

为比较使用不同气体工质的电子回旋共振(ECR)中和器的性能,在真空环境下,用一个电子收集板模拟离子的作用,将电子电流从ECR中和器中引出,实验研究了以氩气和氪气为工质时,ECR中和器引出电子电流的大小以及中和器的性能。实验结果表明:以氩气为工质,ECR中和器在体积流量0.8 m L/min时,88.6 V电压可引出103.8 m A的电子电流,工质利用效率和电子损耗分别为1.278 9 W/A和194.573 W/A;以氪气为工质,ECR中和器在体积流量0.6 m L/min时,75 V电压可引出108 m A电子电流,工质利用效率和电子产生损耗分别为1.783 2W/A和176.7 W/A。以氪气为工质的中和器性能明显优于氩气,但2种工质都可以满足ECR离子源中和离子束流的需要。

PZT铁电薄膜材料的ECR等离子体刻蚀研究

以SF6和SF6+Ar为刻蚀气体,采用电子回旋共振等离子体刻蚀工艺成功地对溶胶-凝胶工艺制备的锆钛酸铅铁电薄膜进行了有效的刻蚀去除.研究了不同气体总流量、混合比、微波功率等因素对刻蚀速率的影响,指出当气体混合比约为20%时,刻蚀速率达到最大值.锆钛酸铅铁电薄膜表面组份XPS能谱分析曲线表明,在SF6和SF6+Ar气体中,被刻蚀后样品的Pb含量大大减少,TiO2的刻蚀是限制锆钛酸铅铁电薄膜刻蚀速率的主要因素.

微波ECR等离子体特性及其对DLC膜性能的影响

为了解并优化在微波ECR等离子体增强化学气相沉积制备类金刚石膜工艺研究中的等离子体特性,利用朗缪尔探针法系统地测量了等离子体密度(Ne)、电子温度(Te)随工作气压(p)变化的关系。DLC膜的结构和性能依赖于沉积条件,提高等离子体密度有利于DLC膜的生长。本文示出了不同的CH4流量时,DLC膜的拉曼光谱和表面均方根粗糙度Rrms变化曲线,阐述了等离子体密度Ne、电子温度Te对DLC膜结构和性能的影响。

ECR微波等离子体特性的实验研究

着重介绍采用一段真空波导耦合的ECR微波等离子体装置，以及在CH4－H2混合气体放电情况下，诊断了内部等离子体参数，给出了等离子体密度、电子温度、基板鞘附近的空间电位以及在类金刚石膜合成条件下等离子体中的基团情况，同时研究了它们与工艺参数之间的关系。

微波ECR等离子体源增强非平衡磁控溅射DLC膜的制备与表征

介绍了微波ECR等离子体源增强非平衡磁控溅射设备的结构和工作原理,详细叙述了利用该设备制备类金刚石膜的过程。Raman光谱证实了薄膜的类金刚石特性;采用原子力显微镜(AFM)观察薄膜的微观表面形貌,均方根粗糙度大约为1.9nm,结果表明薄膜表面非常光滑;利用CERT微摩擦计进行摩擦、磨损和划痕实验,薄膜的平均摩擦系数较小,大约为0.175;DLC膜和Si衬底磨损情况的扫描电镜图片相对比,可以看到DLC膜的磨痕小的多,说明薄膜有较好的耐磨性能;划痕测试结果表明制备薄膜临界载荷大约为40mN。

p-Si薄膜生长的ECR-CVD等离子体系统的结构设计

提出了一种生长p-Si薄膜的ECR-PECVD等离子体系统。系统采用永磁铁和线圈相结合,改善反应室磁场的均匀性;微波窗口设计成多层结构,避免窗口污染;衬底托架移动和旋转利于改善生长膜的均匀性。

ECR等离子体对硅表面的低温大面积氮化

利用电子回旋共振微波放电氮等离子体对单晶硅表面进行了低温大面积氮化的探索 ,通过样品表征和等离子体成分探测 ,分析讨论了氮化机理。结果表明 ,这种方法可以用于硅表面的低温氮化处理 ,获得大面积的均匀氮化硅表层。

Geobel模型的ECRIT离子源性能计算分析

利用Geobel模型对电子回旋共振离子推力器的离子源性能进行了计算,分析工质利用率与放电损耗的关系、电子温度与离子源性能的关系、离子源长度和栅极有效透明度对放电损耗和工质利用率的影响。采用Geobel模型对电子回旋共振离子推力器性能的计算结果为:20 cm ECRIT离子源在100 mm轴向长度、80%栅极有效透明度条件下,工质利用率为90%,放电损失为203 W/A;10 cm ECRIT离子源在40 mm轴向长度、80%栅极有效透明度条件下,工质利用率为86%,放电损失为300 W/A。结果表明:采用Geobel模型算法计算结果与国外文献数据的相对误差小于5%,利用该模型对电子回旋共振离子推力器离子源性能分析的方法有效、合理。

ECR等离子体刻蚀CVD金刚石膜的研究

在自主设计的具有非对称磁镜场位形的ECR等离子体装置上进行CVD金刚石膜的刻蚀实验,研究了基片温度、工作气压和磁场位形三个工艺参数对刻蚀效果的影响。实验结果表明:通过此方法刻蚀的CVD金刚石膜,其晶粒顶端被优先刻蚀,表面粗糙度降低。实际数据显示,刻蚀温度为20℃和150℃时,后者的刻蚀效果更好;工作气压为2×10-3Pa和3×10-2Pa时,前者的刻蚀效果更好;磁场强度为0.2T和0.15 T时,前者的刻蚀效果更强。