GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT's excellent performances and GaAs-based HEMT's mature processes. GaAs...GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT's excellent performances and GaAs-based HEMT's mature processes. GaAs-based MHEMTs were applied to millimeter-wave low-noise, high-power applications and systems. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are important performance parameter of GaAs-based MHEMTs, and they are limited by the gate-length mainly. Electron beam lithography is one of the lithography technologies which can be used to realize the deep submicron gate-length. The 200 nm gate-length GaAs-based MHEMTs have been fabricated by electron beam lithography. In order to reduce the parasite gate capacitance and gate resistance, a trilayer resist structure was used to pattern the T-gate resist profile. Excellent DC, high frequency and power performances have been obtained. FT and fmax are 105 GHz, 70 GHz respectively. The research is very helpful to obtain higher performance GaAs-based MHEMTs.展开更多
应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参...应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参数的变化。实验表明,门极触发电流随辐照剂量的增加而迅速增大,辐照剂量在20 k Gy以下时,通态电压基本没有增加;门极触发电流在可控硅约225℃以下退火时,存在反退火现象,继续提高退火温度又表现出正常的退火结果;1.5 Me V电子辐照技术不仅能有效提高可控硅门极触发电流,还能提高晶圆片门极触发电流的一致性。展开更多
lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short...lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.展开更多
InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF...InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.展开更多
基金the National Basic Research Program of China (Grant No. G2002CB311901)Equipment Advance Research Project (Grant No. 61501050401C)Institute of Microelectronics, Chinese Academy of Sciences, Dean Fund (Grant No. 06SB124004)
文摘GaAs-based metamorphic HEMTs (MHEMT) consist of GaAs substrates and InP-based epitaxial structure, and have the advantages of both InP HEMT's excellent performances and GaAs-based HEMT's mature processes. GaAs-based MHEMTs were applied to millimeter-wave low-noise, high-power applications and systems. The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are important performance parameter of GaAs-based MHEMTs, and they are limited by the gate-length mainly. Electron beam lithography is one of the lithography technologies which can be used to realize the deep submicron gate-length. The 200 nm gate-length GaAs-based MHEMTs have been fabricated by electron beam lithography. In order to reduce the parasite gate capacitance and gate resistance, a trilayer resist structure was used to pattern the T-gate resist profile. Excellent DC, high frequency and power performances have been obtained. FT and fmax are 105 GHz, 70 GHz respectively. The research is very helpful to obtain higher performance GaAs-based MHEMTs.
文摘应用电子束射线对单向微触发可控硅晶圆片进行不同条件的辐照,使用晶体管图示仪测试其门极触发电流和通态电压,研究了辐照剂量、剂量率对门极触发电流和通态电压的影响,使用不同的退火工艺对辐照后的可控硅进行退火实验,监测其退火后参数的变化。实验表明,门极触发电流随辐照剂量的增加而迅速增大,辐照剂量在20 k Gy以下时,通态电压基本没有增加;门极触发电流在可控硅约225℃以下退火时,存在反退火现象,继续提高退火温度又表现出正常的退火结果;1.5 Me V电子辐照技术不仅能有效提高可控硅门极触发电流,还能提高晶圆片门极触发电流的一致性。
基金supported by the National Natural Science Foundation of China(No.61306113)
文摘lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.
基金supported by the National Natural Science Foundation of China(No.61306113)
文摘InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.
