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Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing 被引量:1
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作者 申艳艳 张一新 +5 位作者 祁婷 乔瑜 贾钰欣 黑鸿君 贺志勇 于盛旺 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第8期123-126,共4页
Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond (MCD) films. Its electrical field... Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation. 展开更多
关键词 CU of MCD Phase Transformation and Enhancing electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing in by
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Electron Microscopy Analysis of Deformation Induced ε Martensite Transformation in an Fe-Mn-Si-Cr-Ni Alloy
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作者 Fuxing YIN Jianxin ZHANG Ruixiang WANG and Nanju GU (Hebei Institute of Technology, Tianjin, 300132, China)(To whom correspondence should be addressed)Kenichi Shimizu (Kanazawa Institute of Technology, Ishikawa, Japan) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1994年第4期263-268,共6页
The configurations of stacking faults and morphologies of strain induced ε martensite plates in an FeMnSiCrNi alloy were investigated through electron microscopy analysis. The Shockley partial dislocation structures.... The configurations of stacking faults and morphologies of strain induced ε martensite plates in an FeMnSiCrNi alloy were investigated through electron microscopy analysis. The Shockley partial dislocation structures. sensitive to external stress. determine the configurations of stacking faults in γphase Partial dislocations at the front sides of stacking faults are usetul for the nucleation of εmartensite plates. The growth of ε martensite plates is accompanied with the disappearance of local pre-existing stacking faults, The ε martensite vanants behave in three morphologies of respective stopping. continuous penetrating and intersections with the formation of secondary ε martensite plates 展开更多
关键词 MN electron Microscopy Analysis of Deformation Induced Martensite Transformation in an Fe-Mn-Si-Cr-Ni Alloy Fe Si Cr Ni
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Interfacial Charge Transfer Induced Electronic Property Tuning of MoS_2 by Molecular Functionalization
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作者 Si-Han Zhou Chun-Wei Zhou +3 位作者 Xiang-Dong Yang Yang Li Jian-Qiang Zhong Hong-Ying Mao 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第5期94-98,共5页
The modulation of electrical properties of MoS_2 has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices.Herein,interfacial charge transfer induced elec... The modulation of electrical properties of MoS_2 has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices.Herein,interfacial charge transfer induced electronic property tuning of MoS_2 are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements.A downward band-bending of MoS_2-related electronic states along with the decreasing work function,which are induced by the electron transfer from Cs overlayers to MoS_2,is observed after the functionalization of MoS_2 with Cs,leading to n-type doping.Meanwhile,when MoS_2 is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane(F_4-TCNQ),an upward band-bending of MoS_2-related electronic states along with the increasing work function is observed at the interfaces.This is attributed to the electron depletion within MoS_2 due to the strong electron withdrawing property of F_4-TCNQ,indicating p-type doping of MoS_2.Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS_2 and paves the way to optimize its performance in electronic and optoelectronic devices. 展开更多
关键词 Interfacial Charge Transfer Induced electronic Property Tuning of MoS_2 by Molecular Functionalization
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Metal Induced Inhibition of Photosynthesis,Photosynthetic Electron Transport Chain and ATP Content of Anabaena doliolum and Chlorella vulgaris:Interaction with Exogenous ATP 被引量:1
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作者 NIRUPA MAMALLICK L.C.RAI 《Biomedical and Environmental Sciences》 SCIE CAS CSCD 1992年第3期241-250,共10页
This study demonstrates a concentration dependent inhibition of carbon fixation, O2 evolution, photosynthetic electron transport chain and ATP content of A. doliolum and C. vulgaris by Cu, Ni and Fe. Although the mode... This study demonstrates a concentration dependent inhibition of carbon fixation, O2 evolution, photosynthetic electron transport chain and ATP content of A. doliolum and C. vulgaris by Cu, Ni and Fe. Although the mode of inhibition of photosynthetic electron transport chain of both the algae was similar, PS II depicted greater sensitivity to the test metals used. The toxicity in both organisms was Cu > Ni > Fe. A. doliolum was, however, more sensitive to Cu and Ni, and C. vulgaris to Fe. Toxicity was generally dependent on metal uptake, which in turn was dependent on their concentrations in the external medium. A partial restoration of nutrient uptake, carbon fixation, and enzyme activities following supplementation of exogenous ATP suggests that ATP regulates toxicity through chelation. 展开更多
关键词 Metal Induced Inhibition of Photosynthesis Photosynthetic electron Transport Chain and ATP Content of Anabaena doliolum and Chlorella vulgaris ATP
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Self-assembly of α-6T Molecule on Ag(100) and Related STM Induced Luminescence
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作者 陈哥国 张超 +1 位作者 张瑞 董振超 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2011年第6期659-664,I0003,共7页
We have investigated the self-assembly and light emission properties of organic α- sexithiophene (α-6T) molecules on Ag(100) under different coverage by scanning tunneling microscopy (STM). At very low coverag... We have investigated the self-assembly and light emission properties of organic α- sexithiophene (α-6T) molecules on Ag(100) under different coverage by scanning tunneling microscopy (STM). At very low coverage, the α-6T molecules form a unique enantiomer by grouping four molecules into a windmill supermolecular structure. As the coverage is increased,α-6T molecules tend to pack side by side into a denser stripe structure. Further increase of the coverage will lead to the layer-by-layer growth of molecules on Ag(100) with the lower-layer stripe pattern serving as a template. Molecular fluorescence for α-6T molecules on Ag(100) at a coverage of five monolayers has been detected by light excitations, which indicates a well decoupled electronic states for the top-layer α-6T molecules. However, the STM induced luminescent spectra for the same sample reveal only plasmonic-like emission. The absence of intramolecular fluorescence in this case suggests that the electronic decoupling is not a sufficient condition for generating photon emission from molecules. For intramolecular fluorescence to occur, the orientation of the dynamic dipole moment of molecules and the energy-level alignment at the molecule-metal interface are also important so that molecules can be effectively excited through efficient dipolar coupling with local plasmons and by injecting holes into the molecules. 展开更多
关键词 α-Sexithiophene SELF-ASSEMBLY Scanning tunneling microscopy Tunneling electron induced luminescence Surface plasmon Plasmon-exciton coupling
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Electrical Homo-Junction Delineation Techniques: A Comparative Study
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作者 Nicolas Vivet Mélanie Diogo +4 位作者 Amandine Aubert Tony Moinet Fabien Allanic Raphael Perdreau Jean-Paul Rebrassé 《Materials Sciences and Applications》 2016年第6期326-347,共22页
In active semiconductor devices, the junction characteristics are critical for the electrical performance. As an alternative of the atomic force microscopy (AFM)-based electrical techniques which provide unique juncti... In active semiconductor devices, the junction characteristics are critical for the electrical performance. As an alternative of the atomic force microscopy (AFM)-based electrical techniques which provide unique junction characterization, other methods are dedicated for the delineation of the electrical junction such as the wet chemical etching, the electrochemical plating method, the Seebeck effect imaging (SEI) method, the electron-beam induced current (EBIC) technique and the secondary electron potential contrast (SEPC) method. The aim of this paper is in the one hand to compare these five techniques in term of sample preparation, spatial application range, spatial resolution, simplicity and information displayed. In the other hand, this review aims to provide some guidelines for the appropriate delineation method(s) selection. It was confirmed that chemical based techniques are the simplest junction delineation methods but exhibit some drawbacks in term of spatial resolution and reproducibility. Despite of a limited spatial resolution, it was evidenced that EBIC can provide accurate electrical characterization of the junction. Finally, it was demonstrated that SEPC is the most promising technique providing the higher spatial resolution. The effect of the sample preparation method has been described. Even if the comparison was mainly based on homo-micro-Silicon junctions (n-p and n-p-n-p), the results were also discussed for short SiC junctions. The importance of the analysis context was considered in this paper and analysis flow was suggested for specific analysis cases. 展开更多
关键词 Junction Delineation Silicon Silicon Carbide electron Beam Induced Current Seebeck Effect Imaging Secondary electron Potential Contrast
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Direct Observation of Growth and Self-assembly of Pt Nanoclusters in Water with the Aid of a Triblock Polymer Using in situ Liquid Cell Transmission Electron Microscopy (TEM) 被引量:5
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作者 Xin Chen Chang Li +3 位作者 Xing Kong Hongliang Cao Hulian Wang Xiaoqin Zhou 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2017年第8期1278-1283,共6页
Triblock copolymers are playing important roles in nanomaterial synthesis, and the nanomaterial forming mechanisms need to be studied in detail. In situ liquid cell transmission electron microscopy (TEM) is a powerf... Triblock copolymers are playing important roles in nanomaterial synthesis, and the nanomaterial forming mechanisms need to be studied in detail. In situ liquid cell transmission electron microscopy (TEM) is a powerful tool for real time observation of the dynamic growth behavior of nanomaterials in liquid with high resolution, and could be used for the above task. Here we report the observation of the growth and self-assembly of Pt nanoclusters with the aid of an ethylene oxide-propylene oxide-ethylene oxide triblock copolymer (PEO-PPO-PEO) F 127 using in situ liquid cell TEM, with the nanocluster growth and formation procedures being tracked. Nano objects were seen to appear, drift and rotate with time, and then form into certain shaped nanoclusters under the electron beam irradiation. Further interestingly, in the thicker liquid layer region, the nanoclusters appeared to be fluffy, with average size keeping increase with time, while in the thinner region, the clusters were thinner, and got densified with time. The difference in precursor availability due to liquid layer thickness and charging effects is attributed to such a phenomenon. 展开更多
关键词 in sire liquid cell TEM electron beam induced growth SELF-ASSEMBLY PT triblock copolymer
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Evaluating electron induced degradation of triple-junction solar cell by numerical simulation 被引量:1
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作者 LI Jun-wei WANG Zu-jun +3 位作者 SHI Cheng-ying XUE Yuan-yuan NING Hao XU Rui 《Optoelectronics Letters》 EI 2021年第5期276-282,共7页
In this paper,the degradation related parameters of GaInP/GaAs/Ge triple-junction solar cell induced by electron irradiation are carried out by numerical simulation.The degradation results of short-circuit current,ope... In this paper,the degradation related parameters of GaInP/GaAs/Ge triple-junction solar cell induced by electron irradiation are carried out by numerical simulation.The degradation results of short-circuit current,open-circuit voltage,maximum power have been investigated,and the degradation mechanism is analyzed.Combining the degradation results,the degradation of normalized parameters versus displacement damage dose is obtained.The results show that the degradation increases with the increase of the electron fluence and electron irradiation energy.The degradation normalized related parameters versus displacement damage dose can be characterized by a special curve that is not affected by the type of irradiated particles.By calculating the annual displacement damage dose and the on-orbit operation time of special space orbit,the degradation of normalized parameters can be obtained with the fitting curve in the simulation.The study will provide an approach to estimate the radiation damage of triple-junction solar cell induced by space particle irradiation. 展开更多
关键词 Evaluating electron induced degradation of triple-junction solar cell by numerical simulation
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A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology
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作者 Xin Chen Lihui Zhou +3 位作者 Ping Wang Hongliang Cao Xiaoli Miao Feifei Wei 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2014年第5期399-404,共6页
SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two piec... SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two pieces of Si_(3)N_(4)window grids in an in situ TEM liquid cell.Focused 200 keV electron beams were used to bombard the sealed precursors,which caused decomposition of the precursor materials,and deposition of the nano materials on the Si_(3)N_(4)window substrates.The size of nano dots increased with beam exposure time,following an approximately exponential relationship with the beam doses.Secondary electrons are attributed as the primary sources for the Si and C reduction.A nano device was formed from a deposited nano wire,with its electrical property characterized. 展开更多
关键词 electron beam induced deposition in situ TEM NANOLITHOGRAPHY NANODEVICES
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Chemically induced dynamic electron polarization investigation of the triplet-radical system in the solution of the triplet quencher 被引量:4
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作者 张先燚 许新胜 +1 位作者 崔执风 陆同兴 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2000年第5期683-687,共5页
The chemically induced dynamic electron polarization (CIDEP) of the triplet molecule/triplet quencher/2, 2, 6, 6-tetramethyl-1-piperidinyloxyl (TEMPO) systems were measured using the high time-resolved ESR spectromete... The chemically induced dynamic electron polarization (CIDEP) of the triplet molecule/triplet quencher/2, 2, 6, 6-tetramethyl-1-piperidinyloxyl (TEMPO) systems were measured using the high time-resolved ESR spectrometer. The competition between the radical-triplet pair mechanism (RTPM) and triplet mechanism (TM) or radical pair mechanism (KIM) polarization in the solution of the triplet quencher was investigated, and the relationships between reaction rate of the radical-triplet pair and quenching rate of triplet was deduced. 展开更多
关键词 Chemically induced dynamic electron polarization triplet-radical pair mechanism triplet quenching
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A Study of Nano Materials and Their Reactions in Liquid Using in situ Wet Cell TEM Technology 被引量:1
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作者 Chen Xin Zhou Lihui +2 位作者 Wang Ping Zhao Chongjun Miao Xiaoli 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2012年第12期2839-2843,共5页
Several nano material and reaction systems were in situ monitored with an electrochemical TEM wet cell set up. In a 1 g/L sliver particle aqueous solution, the particles were observed to be ca. 10 nm sized, in both di... Several nano material and reaction systems were in situ monitored with an electrochemical TEM wet cell set up. In a 1 g/L sliver particle aqueous solution, the particles were observed to be ca. 10 nm sized, in both discrete particle and nano cluster forms. The silver particles were attached to the 50 nm-thick Si3N4 windows of the wet cell and could not move freely in the liquid. With a SIC14 liquid loaded in the wet cell, silicon nano materials were controllably grown on the wet cell windows by means of a liquid phase electron beam induced deposition (EBID) method. The deposited nano dots were nicely round-shaped, and demonstrated a power law growth dependency on beam exposure time in a log-log plot. In a NiCI2 solution/Ni system, both electrochemical deposition and dissolution of the nickel nano films were observed while applying electric biases on to the nickel electrodes in the wet cell. Instead of extensional growth on existing crystals, interestingly, it is more commonly observed that new nickel nano particles grow out in front of the existing film first and then merged into the film. The wet cell set up is demonstrated to be a versatile tool for nano liquid system research. 展开更多
关键词 in situ TEM nano material electrochemical reaction electron beam induced deposition SEMICONDUCTOR
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Electrocondensation and Evaporation of Attoliter Water Droplets: Direct Visualization Using Atomic Force Microscopy 被引量:1
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作者 Narendra Kurra Adina Scott Giridhar U.Kulkarni 《Nano Research》 SCIE EI CSCD 2010年第5期307-316,共10页
Working with a biased atomic force microscope(AFM)tip in the tapping mode under ambient atmosphere,attoliter(10^(-18) L)water droplet patterns have been generated on a patterned carbonaceous surface.This is essentiall... Working with a biased atomic force microscope(AFM)tip in the tapping mode under ambient atmosphere,attoliter(10^(-18) L)water droplet patterns have been generated on a patterned carbonaceous surface.This is essentially electrocondensation of water leading to charged droplets,as evidenced from electrostatic force microscopy measurements.The droplets are unusual in that they exhibit a highly corrugated surface and evaporate rather slowly,taking several tens of minutes. 展开更多
关键词 Electrocondensation attoliter water droplets biased atomic force microscope(AFM)lithography electron beam induced deposition carbonaceous deposition
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Synthesis, spectroscopic, and electrochemical properties of two dyads consisted of tetrathiafulvalene and carbazole
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作者 Guoqiao LAI Yibo LIU +1 位作者 Meijiang LI Yongjia SHEN 《Frontiers of Chemical Science and Engineering》 SCIE EI CSCD 2009年第2期192-195,共4页
Two donor-σ-acceptor molecules containing tetrathiafulvalene(TTF)and carbazole moieties were synthesized bythe reactionof 9-(4-bromo-butyl)-carbazole(1)with 2,6-bis(hexylthio)-3-(2-cyanoethylthio)-7-(methylthio)-tetr... Two donor-σ-acceptor molecules containing tetrathiafulvalene(TTF)and carbazole moieties were synthesized bythe reactionof 9-(4-bromo-butyl)-carbazole(1)with 2,6-bis(hexylthio)-3-(2-cyanoethylthio)-7-(methylthio)-tetrathiafulvalene(2)or2,6-bis(2-cyanoethylthio)-3,7-bis(methylthio)tetrathiafulvalene(3)in the presence of CsOH·H_(2)O,respectively.The structures of the molecules were characterized by 1 H NMR,13 C NMR,MS,and elemental analyses.They showed negligible intramolecu-lar charge-transfer interaction in their ground states as indicated by their UV-Vis spectroscopics and cyclic voltammetry results.Compared with carbazole,their fluorescence was strongly quenched,which implied that a photo induced electron transfer(PET)interaction between TTF and carbazole moieties occurred. 展开更多
关键词 donor-σ-acceptor molecule intramolecular charge transfer interaction photo induced electron transfer TETRATHIAFULVALENE CARBAZOLE
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Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires
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作者 Lukas Hrachowina Xianshao Zou +4 位作者 Yang Chen Yuwei Zhang Enrique Barrigón Arkady Yartsev Magnus T.Borgström 《Nano Research》 SCIE EI CSCD 2021年第11期4087-4092,共6页
Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electro... Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO_(x)/Al_(2)O_(3) shell in contrast to results using SiO_(x). We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO_(x)/Al_(2)O_(3) has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices. 展开更多
关键词 InP nanowires OXIDES MOVPE electron beam induced current(EBIC) time-resolved photoluminescence(TRPL) FIELD-EFFECT
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