Electron relaxation properties of Ar magnetron plasmas

An understanding of electron relaxation properties in plasmas is of importance in the application of magnetrons. An improved multi-term approximation of the Boltzmann equation is employed to study electron transport and relaxation properties in plasmas. Elastic, inelastic and nonconservative collisions between electrons and neutral particles are considered. The expressions for the transport coefficients are obtained using the expansion coefficients and the collision operator term. Numerical solutions of the matrix equations for the expansion coefficients are also investigated. Benchmark calculations of the Reid model are presented to demonstrate the accuracy of the improved multi-term approximation. It is shown that the twoterm approximation is generally not accurate enough and the magnetic fields can reduce the anisotropy of the velocity distribution function. The electron relaxation properties of Ar plasmas in magnetrons for various magnetic fields are studied. It is demonstrated that the energy parameters change more slowly than the momentum parameters.

Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.

Spin Noise Spectroscopy in N-GaAs:Spin Relaxation of Localized Electrons

Spin noise spectroscopy （SNS） of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons~ which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.

Influence of Superathermal Electrons oll Central Plasma Relaxation Oscillations during Localized Electron Cyclotron Heating on the HL-1M Tokamak

During initial studies of ECRH in the HL-1M tokamak, non-standard central MHD activities,such as saturated sawtooth, partially saturated sawtooth, double sawtooth, and the strong m = 1 bursts have been observed while changing the heating location, the ECRH power, the plasma density. Complete suppression of sawtooth is achieved for the duration of the ECRH, when the heating power is applied on the high-field side of low-density plasma, and exceeds a threshold value of power. The m = 1 bursts riding on the ramp phase of sawtooth can only be excited when the ECRH location is near the q = 1 surface on the high field side. The conditions under which the various relaxation activities are produced or suppressed are described. Experimental results imply that the energetic electrons generated during ECRH are responsible for the modification/or stabilization/or excitation of the instability. Near the q = 1 surface, the passing electrons play the role of reducing the shear and tending to stabilize the sawtooth activity, while the barely-trapped electrons play the role of enhancing or driving an internal kink instability.

Effects of Internal Relaxation under Inplane Strain on the Structural,Electronic and Optical Properties of Perovskite BaZrO3

We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson＇s ratio caused by internal relaxation was smaller than the elastic deformation, indicating an ＂inelastic＂ or ＂plastic＂ relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.

The evaluation of temporal electronic structures of nonresonant Raman excited virtual state of thiourea

An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour of the excited virtual states of thiourea is that the Raman excited electrons tend to flow to the N-H bonds and C-N bonds from the S-C bonds because of the electronic repulsion effect. The difference in Raman excited electron relaxation time of thiourea under 514.5-nm and 325-nm excitations has been observed, which quantitatively shows that the Raman scattering process is dependent on the wavelength of the pumping laser. Finally, the distribution of the electrons at the final stage of relaxation is given out through the comparison between the bond electronic densities of the ground states and the bond polarizabilities after deexcitation.

Effect of relaxation on the energetics and electronic structure of clean Ag3PO4(111) surface

The effect of relaxation on the energetics and electronic structure of clean Ag3PO4（111） surface has been studied, carried out using first-principles density functional theory（DFT） incorporating the GGACU formalism.After atomic relaxation of the Ag3PO4（111） surface, it is found that O atoms are exposed to the outermost surface,due to an inward displacement of more than 0.06 nm for the two threefold-coordinated Ag atoms and an outward displacement of about 0.004 nm for three O atoms in the sublayer. The atomic relaxations result in a large transfer of surface charges from the outermost layer to the inner layer, and the surface bonds have a rehybridization, which makes the covalence increase and thus causes the surface bonds to shorten. The calculated energy band structures and density of states of the Ag3PO4（111） surface present that the atomic relaxation narrows the valence band width0.15 e V and increases the band gap width 0.26 e V. Meantime, the two surface peaks for the unrelaxed structure disappear at the top of the valence band and the bottom of the conduction band after the relaxed structure, which induces the transformation from a metallic to a semi-conducting characteristic.