The influence of electron thermal conductivity on the laser x-ray conversion in the coupling of 3w. laser with Au plane target has been investigated by using a non-LTE radiation hydrodynamic code. The non-local electr...The influence of electron thermal conductivity on the laser x-ray conversion in the coupling of 3w. laser with Au plane target has been investigated by using a non-LTE radiation hydrodynamic code. The non-local electron thermal conductivity is introduced and compared with the other two kinds of the flux-limited Spitzer-Harm description. The results show that the non-local thermal conductivity causes the increase of the laser x-ray conversion efficiency and important changes of the plasma state and coupling feature.展开更多
SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely lo...SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric properties.In this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe alloying.First,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal conductivity.Then,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier mobility.Finally,a maximum figure of merit(ZT) of~ 0.87 at 823 K and an average ZT of~ 0.51 at 300-823 K have been achieved in Sn_(0.96)Bi_(0.04)Te-5%CdSe.Our results indicate that decreasing the electronic thermal conductivity is an effective means of improving the performance of thermoelectric materials with a high carrier concentration.展开更多
This paper numerically simulates the process of ablation of an aluminum target by an intense femtosecond laser with a fluence of 40 J/cm2 based on the two-temperature equation, and obtains the evolution of the free el...This paper numerically simulates the process of ablation of an aluminum target by an intense femtosecond laser with a fluence of 40 J/cm2 based on the two-temperature equation, and obtains the evolution of the free electron temperature and lattice temperature over a large temporal and depth range, for the first time. By investigating the temporal evolution curves of the free electron temperature and lattice temperature at three representative depths of 0, 100 nm and 500 nm, it reveals different characteristics and mechanisms of the free electron temperature evolution at different depths. The results show that, in the intense femtosecond laser ablation of aluminum, the material ablation is mainly induced by the thermal conduction of free electrons, instead of the direct absorption of the laser energy; in addition, the thermal conduction of free electrons and the coupling effect between electrons and lattice will induce the temperature of free electrons deep inside the target to experience a process from increase to decrease and finally to increase again.展开更多
The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of...The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.展开更多
We investigated the electronic heat capacity, thermal conductivity, and resistivity of UN using Quantum Espresso and EPW code. GGA, PBEsol functional was used. The calculated electronic heat coefficient was found to b...We investigated the electronic heat capacity, thermal conductivity, and resistivity of UN using Quantum Espresso and EPW code. GGA, PBEsol functional was used. The calculated electronic heat coefficient was found to be significantly reduced (0.0176 J<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>mol<sup><span style="white-space:nowrap;">-</span>1</sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>K<sup><span style="white-space:nowrap;">-</span>2</sup> versus 0.0006 J<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>mol<sup><span style="white-space:nowrap;">-</span>1</sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>K<sup><span style="white-space:nowrap;">-</span>2</sup>) when the non-local hybrid functional (B3LYP) was used. Furthermore, we calculated electrical resistivity using a very transparent Ziman’s formula for metals with the Eliashberg transport coupling function as implemented in EPW code for non-spin-polarized calculations. The number of mobile electrons in UN, as a function of temperature, was derived from the ratio of the calculated resistivity and available experimental data. The electronic thermal conductivity was evaluated from the calculated electronic resistivity via Wiedemann-Franz law with the number of mobility electrons (<em>n<sub>av</sub></em>) incorporated (averaged over the temperature range 300 K - 1000 K). Both the electronic thermal conductivity and resistivity, as calculated using newly evaluated <em>n<sub>av</sub></em>, compare well with experimental data at ~700 K, but to reproduce the observed trend as a function of temperature, the number of mobile electrons must decrease with the temperature as evaluated.展开更多
基金the National High-Tech ICF Committee in Chinathe National Natute Science Foundation of China !(No.19735002)the Fund of C
文摘The influence of electron thermal conductivity on the laser x-ray conversion in the coupling of 3w. laser with Au plane target has been investigated by using a non-LTE radiation hydrodynamic code. The non-local electron thermal conductivity is introduced and compared with the other two kinds of the flux-limited Spitzer-Harm description. The results show that the non-local thermal conductivity causes the increase of the laser x-ray conversion efficiency and important changes of the plasma state and coupling feature.
基金financially supported by the National Natural Science Foundation of China (Nos.52102234 and 51972094)the High-level Talents Research Initiation Project of Hebei University (No.521000981421)Hebei Province Introduced Overseas Student Funding Project (No.C20210313)。
文摘SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric properties.In this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe alloying.First,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal conductivity.Then,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier mobility.Finally,a maximum figure of merit(ZT) of~ 0.87 at 823 K and an average ZT of~ 0.51 at 300-823 K have been achieved in Sn_(0.96)Bi_(0.04)Te-5%CdSe.Our results indicate that decreasing the electronic thermal conductivity is an effective means of improving the performance of thermoelectric materials with a high carrier concentration.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10904079 and 60838001)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090031120041)the Natural Science Foundation of Tianjin (Grant No. 10JCYBJC01300)
文摘This paper numerically simulates the process of ablation of an aluminum target by an intense femtosecond laser with a fluence of 40 J/cm2 based on the two-temperature equation, and obtains the evolution of the free electron temperature and lattice temperature over a large temporal and depth range, for the first time. By investigating the temporal evolution curves of the free electron temperature and lattice temperature at three representative depths of 0, 100 nm and 500 nm, it reveals different characteristics and mechanisms of the free electron temperature evolution at different depths. The results show that, in the intense femtosecond laser ablation of aluminum, the material ablation is mainly induced by the thermal conduction of free electrons, instead of the direct absorption of the laser energy; in addition, the thermal conduction of free electrons and the coupling effect between electrons and lattice will induce the temperature of free electrons deep inside the target to experience a process from increase to decrease and finally to increase again.
文摘The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.
文摘We investigated the electronic heat capacity, thermal conductivity, and resistivity of UN using Quantum Espresso and EPW code. GGA, PBEsol functional was used. The calculated electronic heat coefficient was found to be significantly reduced (0.0176 J<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>mol<sup><span style="white-space:nowrap;">-</span>1</sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>K<sup><span style="white-space:nowrap;">-</span>2</sup> versus 0.0006 J<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>mol<sup><span style="white-space:nowrap;">-</span>1</sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>K<sup><span style="white-space:nowrap;">-</span>2</sup>) when the non-local hybrid functional (B3LYP) was used. Furthermore, we calculated electrical resistivity using a very transparent Ziman’s formula for metals with the Eliashberg transport coupling function as implemented in EPW code for non-spin-polarized calculations. The number of mobile electrons in UN, as a function of temperature, was derived from the ratio of the calculated resistivity and available experimental data. The electronic thermal conductivity was evaluated from the calculated electronic resistivity via Wiedemann-Franz law with the number of mobility electrons (<em>n<sub>av</sub></em>) incorporated (averaged over the temperature range 300 K - 1000 K). Both the electronic thermal conductivity and resistivity, as calculated using newly evaluated <em>n<sub>av</sub></em>, compare well with experimental data at ~700 K, but to reproduce the observed trend as a function of temperature, the number of mobile electrons must decrease with the temperature as evaluated.