Investigation of the performance of CF3I/c-C4F8/N2 and CF3I/c-C4F8/CO2 gas mixtures from electron transport parameters

CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas mixtures with c-C4F8 and buffer gases N2 and CO2 by considering dielectric strength from electron transport parameters based on the Boltzmann method and synergistic effect analysis,compared with SF6 gas mixtures.The results confirm that the critical electric field strength of CF3I/c-C4F8/70%CO2 is greater than that of 30%SF6/70%CO2 when the CF3I content is greater than 17%.Moreover,a higher content of c-C4F8 decreases the sensitivity of gas mixtures to an electric field,and this phenomenon is more obvious in CF3I/c-C4F8/CO2 gas mixtures.The synergistic effects for CF3I/c-C4F8/70%N2 were most obvious when the c-C4F8 content was approximately 20%,and for CF3I/c-C4F8/70%CO2 when the c-C4F8 content was approximately 10%.On the basis of this research,CF3I/c-C4F8/70%N2 shows better insulation performance when the c-C4F8 content is in the15%–20%range.For CF3I/c-C4F8/70%CO2,when the c-C4F8 content is in the 10%–15%range,the gas mixtures have excellent performance.Hence,these gas systems might be used as alternative gas mixtures to SF6 in high-voltage equipment.

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.

Performance Enhancement in Dye-Sensitized Solar Cells with Composite Mixtures of TiO_2 Nanoparticles and TiO_2 Nanotubes

In the present investigation,a new composite nanostructured photoanodes were prepared using TiO_2 nanotubes（TNTs） with TiO_2 nanoparticles（TNPs）.TNPs were synthesized by sol-gel method,and TNTs were prepared through alkali hydrothermal method.Dye-sensitized solar cells（DSSCs） were fabricated with different photoanodes comprising of various ratios of TNTs ＋ TNPs,synthetic indigo dye as photosensitizer,PMII（l-propyl-3-methylimidazolium iodide） as ionic liquid electrolyte and cobalt sulfide as counter electrode.The structures and morphologies of TNPs and TNTs were analyzed through X-ray diffractometer,transmission electron microscope and scanning electron microscopes.The results of the investigation showed that the DSSC-4 made with composite photoanode structure（TNTs/TNPs）（90% of TNPs ＋ 10% of TNTs） had improved photocurrent efficiency（2.11%） than pure TNPs（1.00%） and TNT film（0.78%）.Electrochemical impedance spectra revealed that the composite TNTs/TNPs film-based DSSCs possessed the lowest charge-transfer resistances and longest electron lifetime.Hence,it could be concluded that the composite TNTs/TNPs photoanode facilitates the charge transport rate and enhances the efficiencies of DSSCs.