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Human blood plasma-based electronic integrated circuit amplifier configuration 被引量:1
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作者 Shiv Prasad Kosta Manthan Manavadaria +4 位作者 Killol Pandya Yogesh.Prasad Kosta Shakti Kosta Harsh Mehta Jaimin Patel 《The Journal of Biomedical Research》 CAS 2013年第6期520-522,共3页
Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man ... Dear Editor: There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit (IC) configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology. 展开更多
关键词 IC MHz Human blood plasma-based electronic integrated circuit amplifier configuration CRO over
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A versatile 16-channel front-end integrated circuit for semiconductor radiation detectors
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作者 ZHANG Yacong CHEN Zhongjian +3 位作者 LU Wengao AN Huiyao JIN Ye JI Lijiu 《Nuclear Science and Techniques》 SCIE CAS CSCD 2010年第2期118-122,共5页
A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a p... A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a peak detect and hold circuit and a discriminator, while analog voltage and channel address are routed off the chip. It can accommodate both electron and hole collection with selectable gain and peaking time. Sequential and sparse readout, combining with self-trigger and external trigger, makes four readout modes. The circuit is implemented in a 0.35 μm DP4M (double-poly-quad-metal) CMOS technology with an area of 2.5×1.54 mm2 and power dissipation of 60 mW. A single channel chip is tested with Verigy 93000. The gain is adjustable from 13 to 130 mV·fC–1 while the peaking time varies between 0.7 and 1.6 μs. The linearity is more than 99% and the equivalent noise charge is about 600e. 展开更多
关键词 辐射探测器 集成电路 16通道 半导体 前端 电荷灵敏放大器 CMOS技术 模拟通道
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Wide bandgap semiconductor-based integrated circuits
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作者 Saravanan Yuvaraja Vishal Khandelwal +1 位作者 Xiao Tang Xiaohang Li 《Chip》 EI 2023年第4期105-132,共28页
Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent exa... Wide-bandgap semiconductors exhibit much larger energybandgaps than traditional semiconductors such as silicon,rendering them very promising to be applied in the fields of electronics and optoelectronics.Prominent examples of semiconductors include SiC,GaN,ZnO,and diamond,which exhibitdistinctive characteristics such as elevated mobility and thermalconductivity.These characteristics facilitate the operation of awide range of devices,including energy-efficient bipolar junctiontransistors(BJTs)and metal-oxide-semiconductor field-effecttransistors(MOSFETs),as well as high-frequency high-electronmobility transistors(HEMTs)and optoelectronic components suchas light-emitting diodes(LEDs)and lasers.These semiconductorsare used in building integrated circuits(ICs)to facilitate theoperation of power electronics,computer devices,RF systems,andother optoelectronic advancements.These breakthroughs includevarious applications such as imaging,optical communication,andsensing.Among them,the field of power electronics has witnessedtremendous progress in recent years with the development of widebandgap(WBG)semiconductor devices,which is capable ofswitching large currents and voltages rapidly with low losses.However,it has been proven challenging to integrate these deviceswith silicon complementary metal oxide semiconductor(CMOS)logic circuits required for complex control functions.The monolithic integration of silicon CMOS with WBG devices increases thecomplexity of fabricating monolithically integrated smart integrated circuits(ICs).This review article proposes implementingCMOS logic directly on the WBG platform as a solution.However,achieving the CMOS functionalities with the adoption of WBGmaterials still remains a significant hurdle.This article summarizesthe research progress in the fabrication of integrated circuitsadopting various WBG materials ranging from SiC to diamond,with the goal of building future smart power ICs. 展开更多
关键词 Wide bandgap semiconductors integrated circuits TRANSISTORS Power electronics
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Advances in Noble Metal-Decorated Metal Oxide Nanomaterials for Chemiresistive Gas Sensors:Overview 被引量:5
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作者 Li‑Yuan Zhu Lang‑Xi Ou +3 位作者 Li‑Wen Mao Xue‑Yan Wu Yi‑Ping Liu Hong‑Liang Lu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第6期353-427,共75页
Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analys... Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analysis.Among various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals.This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection limits.The key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured SMOs.In addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed.Moreover,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in detail.Finally,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed. 展开更多
关键词 Noble metal BIMETAL Semiconducting metal oxide Chemiresistive gas sensor electronic sensitization Chemical sensitization
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Readout electronics for CSR-ETF silicon strip array detector system
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作者 赵兴文 千奕 +8 位作者 孔洁 苏弘 杜中伟 章学恒 闫铎 李占奎 李海霞 王晓辉 童腾 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第4期46-49,共4页
A readout electronics has been developed for the silicon strip array detector system of HIRFL-CSR-ETF.It consists of 48 front end electronics(FEE)boards,12 PXI-DAQ boards and one trigger board.It can implement energy ... A readout electronics has been developed for the silicon strip array detector system of HIRFL-CSR-ETF.It consists of 48 front end electronics(FEE)boards,12 PXI-DAQ boards and one trigger board.It can implement energy and time measurements of 4608 channels.Each FEE board is based on 6 ASICs(ATHED),which implements energy and time measurements of 96 channels.The PXI-DAQ board meets requirements of high-speed counting and amount of readout channels and can process signals of 4 FEEs.The trigger board is developed to select the valid events.The energy linearity of the readout electronics is better than 0.3%in the dynamic range of 0.1-0.7V.In the test with a standard triple alpha source,the energy resolution was 1.8%at 5.48 MeV.This readout electronics enables the silicon strip array system to identify particles of A<14. 展开更多
关键词 探测器系统 电子 读出 阵列 能量分辨率 DAQ板 时间测量
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Foreword to the Journal of Microelectronic Manufacturing
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作者 Tianchun Ye 《Journal of Microelectronic Manufacturing》 2018年第1期1-1,共1页
Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics e... Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers. 展开更多
关键词 Microelectronic MANUFACTURING USA electronicS integrated circuit(IC)
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一种频率与带宽可调的可重构射频滤波器芯片
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作者 骆银松 李智鹏 +2 位作者 吕俊材 曾荣 吕立明 《微波学报》 CSCD 北大核心 2024年第1期87-92,共6页
本文基于0.25μm砷化镓赝晶高电子迁移率晶体管工艺设计实现了一款频率与带宽皆可调的有源可重构滤波器芯片。该滤波器采用了双通道信道化拓扑结构,每个通道由两级可调谐振器与三级宽带放大器交叉级联构成,通过对通道内各级谐振器频率... 本文基于0.25μm砷化镓赝晶高电子迁移率晶体管工艺设计实现了一款频率与带宽皆可调的有源可重构滤波器芯片。该滤波器采用了双通道信道化拓扑结构,每个通道由两级可调谐振器与三级宽带放大器交叉级联构成,通过对通道内各级谐振器频率的同步和异步控制,实现对滤波器的频率与带宽的调谐,通过不同工作频段的通道间切换组合,实现了频率的宽范围调谐。为了验证该设计的有效性,完成了该滤波器的流片,其尺寸为3.1 mm×3.0 mm。经实测,该滤波器通带中心频率可在2.52 GHz~3.92 GHz之间进行调谐,频率调谐比达到了54%,通道内带宽可实现350 MHz~1080 MHz之间的变化,相对带宽可调范围为12%~33%,同时具备了频率和带宽的宽范围调控能力。 展开更多
关键词 可重构滤波器 信道化结构 砷化镓赝晶高电子迁移率晶体管 微波单片集成电路
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集成电路芯片设计与应用课程的教学设计
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作者 陈智 梅美 +2 位作者 李莉 党艳 董晶 《集成电路应用》 2024年第2期136-137,共2页
阐述集成电路芯片设计与应用课程体系的构建,探讨实践环节设计方案,采用分层次、分阶段的方式,将硬件与软件结合、物理验证与仿真分析结合,进一步加强学生工程实践能力的培养。
关键词 电子信息 课程体系 集成电路 应用课程
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新能源汽车电控单元故障智能诊断与维修方法分析 被引量:1
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作者 李发俊 《集成电路应用》 2024年第2期272-273,共2页
阐述一种基于新能源汽车电控单元集成电路智能算法的故障诊断与维修方法,该方法结合数据采集、信号处理和故障判别技术,能够高效准确地诊断和修复电控单元集成电路的故障。
关键词 新能源汽车 电控单元 集成电路 故障诊断
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基于InP HEMT的太赫兹分谐波混频器芯片设计
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作者 何锐聪 王亚冰 +1 位作者 何美林 胡志富 《半导体技术》 北大核心 2024年第2期151-157,共7页
基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175~205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号... 基于70 nm InP高电子迁移率晶体管(HEMT)工艺,研制了一款175~205 GHz分谐波混频器太赫兹单片集成电路(TMIC)。使用三线耦合Marchand巴伦实现本振信号的平衡-不平衡转换。在射频端口设计了紧凑型耦合线结构的带通滤波器,实现对射频信号低损耗带通传输的同时缩小了芯片尺寸。测试结果表明混频器在175~205 GHz频率范围内,单边带(SSB)变频损耗小于15 dB,典型值14 dB。混频器中频频带为DC~25 GHz,射频端口对本振二次谐波信号的隔离度大于20 dB。芯片尺寸为1.40 mm×0.97 mm,能够与相同工艺的功率放大器、低噪声放大器实现片上集成,从而满足太赫兹通信等不同领域的应用需求。 展开更多
关键词 INP 高电子迁移率晶体管(HEMT) 太赫兹单片集成电路 分谐波混频器 带通滤波器 Marchand巴伦
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电子化学品的应用现状及设计
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作者 羊学友 《当代化工研究》 CAS 2024年第5期22-24,共3页
本文旨在为业内更进一步了解电子化学品在相关产业中的应用情况和相关设计内容,便于今后更好地推广及应用电子化学品。本论文利用文献检索方法,积极检索和整理了涉及到此次课题研究所涉及到的内容,先概括了电子产业化学品的具体分类情况... 本文旨在为业内更进一步了解电子化学品在相关产业中的应用情况和相关设计内容,便于今后更好地推广及应用电子化学品。本论文利用文献检索方法,积极检索和整理了涉及到此次课题研究所涉及到的内容,先概括了电子产业化学品的具体分类情况,再从集成电路、面板、光伏这三大产业领域着手,探究了电子化学品的应用现状,还介绍了化学品系统组成设计及相关措施、注意事项等。此次研究表明了若想确保全面推广应用各类电子化学品,需要在设计方面下功夫,做好相关设计优化实践工作,如此才可对电子化学品的全面推广应用起到较好促进作用。 展开更多
关键词 电子化学品 集成电路 显示面板 光伏新能源 化学品集中供应 安全措施
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单片机技术在电子工程中的应用
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作者 罗霞 《农机使用与维修》 2024年第9期112-115,共4页
单片机是现代电子设备中的重要组成部分,是一种集成了处理器核心、存储器、输入/输出端口等多种功能于一体的微型计算机系统,以其小型化、高度集成化和低成本的特点,在各种电子产品中发挥着核心作用。该文系统分析了单片机技术在工业控... 单片机是现代电子设备中的重要组成部分,是一种集成了处理器核心、存储器、输入/输出端口等多种功能于一体的微型计算机系统,以其小型化、高度集成化和低成本的特点,在各种电子产品中发挥着核心作用。该文系统分析了单片机技术在工业控制系统、通信设备及安全系统中的应用,阐述了单片机技术对于促进技术创新和进步的推动作用与效果,并提出未来单片机技术发展趋势及研究重点。研究结果旨在为单片机技术及其在电子工程领域中的发展提供理论基础初步探析。 展开更多
关键词 单片机 电子工程 集成电路 智能系统 硬件设计
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塑封和密封集成电路结构分析方法及案例研究
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作者 胡凛 谢霞平 +1 位作者 曹浩龙 付清轩 《电子质量》 2024年第9期28-35,共8页
元器件结构分析技术能够有效地发现元器件中结构缺陷、设计缺陷和材料选用缺陷,是提升元器件可靠性的重要手段,是元器件应用的有效验证技术。通过对塑封和密封半导体集成电路的结构特点进行研究,提出了一种国产元器件结构分析方法,并以... 元器件结构分析技术能够有效地发现元器件中结构缺陷、设计缺陷和材料选用缺陷,是提升元器件可靠性的重要手段,是元器件应用的有效验证技术。通过对塑封和密封半导体集成电路的结构特点进行研究,提出了一种国产元器件结构分析方法,并以典型案例对该方法开展研究。该方法能够有效地指导国产元器件结构分析工作,提升国产元器件的质量和可靠性。 展开更多
关键词 电子元器件 结构分析 塑封集成电路 密封集成电路 可靠性
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NIST在美国电子信息领域标准化中的角色与作用研究
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作者 刘振东 刘睿 荀立强 《信息技术与标准化》 2024年第6期83-88,共6页
围绕人工智能、集成电路等电子信息技术关键领域,分析NIST在标准化战略、技术创新和先进制造中所扮演的角色。重点研究NIST在标准协调、创新合作网络、基准工具、卓越计划等方面的典型做法。总结了NIST在全链条标准化工作中的经验,提出... 围绕人工智能、集成电路等电子信息技术关键领域,分析NIST在标准化战略、技术创新和先进制造中所扮演的角色。重点研究NIST在标准协调、创新合作网络、基准工具、卓越计划等方面的典型做法。总结了NIST在全链条标准化工作中的经验,提出对我国的启示和建议。 展开更多
关键词 电子信息领域 人工智能 集成电路 标准化 NIST
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半导体器件测试系统中的校准策略分析
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作者 周智芳 《集成电路应用》 2024年第3期60-61,共2页
阐述电子器件测试中的准确度与稳定性、高效性与自动化的问题及原因。针对测试准确度与稳定性问题,提出仪器校准和标定策略优化、噪声抑制和信号增强方法引入的解决措施。针对高效性与自动化问题,提出并行测试技术应用、自动化脚本编写... 阐述电子器件测试中的准确度与稳定性、高效性与自动化的问题及原因。针对测试准确度与稳定性问题,提出仪器校准和标定策略优化、噪声抑制和信号增强方法引入的解决措施。针对高效性与自动化问题,提出并行测试技术应用、自动化脚本编写和远程控制策略优化的解决措施。 展开更多
关键词 集成电路 电子器件 测试技术 测试准确度
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Flip Chip技术在集成电路封装中的应用
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作者 黄家友 《集成电路应用》 2024年第3期56-57,共2页
阐述从集成电路封装发展现状、Flip Chip技术内涵、Flip Chip技术在集成电路封装中的应用剖析、市场发展展望等多个角度,探讨在集成电路封装中,应用Flip Chip技术的必要性和重要性。
关键词 集成电路 Flip Chip技术 电子器件封装
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电子电路基础课程的一体化教学模式分析
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作者 陈欣 郑秋菊 +1 位作者 王妮 刘旭瑞 《集成电路应用》 2024年第6期380-381,共2页
阐述从电子电路基础课程出发,探讨一体化教学模式的设计与应用,通过跨学科整合、基于问题驱动学习、组织合作学习项目,培养学生的综合素质和解决问题的能力。
关键词 电子电路基础 一体化教学模式 教学设计
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“1+X”集成电路证书背景下的模拟电子技术课程改革探索
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作者 彭欣荣 王涛 +1 位作者 宁姗英 李威 《信息与电脑》 2024年第14期204-207,共4页
随着“1+X”集成电路证书政策的实施,高等教育机构需要不断调整和改革课程内容,以适应行业需求和培养学生的实际技能。文章探讨了在“1+X”背景下的课程改革实践和教学模式创新,旨在提高学生的实践能力和创新思维,为其未来在集成电路行... 随着“1+X”集成电路证书政策的实施,高等教育机构需要不断调整和改革课程内容,以适应行业需求和培养学生的实际技能。文章探讨了在“1+X”背景下的课程改革实践和教学模式创新,旨在提高学生的实践能力和创新思维,为其未来在集成电路行业的发展奠定基础。 展开更多
关键词 “1+X”证书 集成电路 模拟电子技术 课程改革
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光伏和风电一体化系统中的电源管理与电子电路设计
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作者 郑仕平 《通信电源技术》 2024年第12期85-87,共3页
光伏和风电一体化系统可以提高可再生能源的利用效率,降低能源成本。文章重点探讨了该系统中电源管理与电子电路设计的关键技术。针对最大功率点跟踪(Maximum Power Point Tracking,MPPT)算法,比较了传统方法与基于机器学习的新型算法,... 光伏和风电一体化系统可以提高可再生能源的利用效率,降低能源成本。文章重点探讨了该系统中电源管理与电子电路设计的关键技术。针对最大功率点跟踪(Maximum Power Point Tracking,MPPT)算法,比较了传统方法与基于机器学习的新型算法,并评估了其性能指标。在并网逆变器设计和储能系统集成方面,深入分析主要拓扑结构、关键参数优化以及经济性。通过一个典型工程案例,评估了系统整体性能和经济环境效益。该研究为光伏和风电一体化系统的优化设计提供了重要技术支持。 展开更多
关键词 光伏和风电一体化 电源管理 电子电路设计 最大功率点跟踪(MPPT)
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Analysis of flowout gas field simulations and ignition methods for sulphuric gas wells
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作者 黄平 钱新明 孙文磊 《Journal of Beijing Institute of Technology》 EI CAS 2011年第4期438-444,共7页
To avoid potential human casualties and environmental pollution,flowout gas from sulphuric gas wells showing high concentrations of volatile gas must be neutralized by controlled ignition.Simulation model is built by ... To avoid potential human casualties and environmental pollution,flowout gas from sulphuric gas wells showing high concentrations of volatile gas must be neutralized by controlled ignition.Simulation model is built by using CFD software for flowout gas,and ignition methods are analyzed.The simulation results indicate that the optimal ignition zone is located between 150mm and 570mm above the gas flowout device.Two ignition methods,electronical and chemical,are developed.12 and 6 experimental tests are performed respectively for these two methods.Results from the above tests verify that both approaches are successful in igniting the gas promptly and safely.In addition,our experience proves that the former way is more suitable for the fixed position ignition case,while the latter is more suitable for the long-distance or emergent ignition case.These two approaches can potentially be applied to a wide range of situations other than the fixed position ignition case and long distance ignition case. 展开更多
关键词 sulphuric gas well flowout gas diffusing field simulation electronic ignition chemical ignition
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