Research on Silicon Carbide Dispersion-Reinforced Hypereutectic Aluminum-Silicon Electronic Packaging Materials

The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties.

Literature Review of Electronic Packaging Technology and Residual Stress

The rapid development of the electronic information industry brings to the irreplaceable role of electronic components, therefore the search of a more reliable packaging material has become increasingly important. In the electronic packaging system, the failure phenomenon caused by residual stress is one of the key factors restricting the development of electronic packaging technology. In order to use the in-situ characterization technology to explore the residual stress inducing mechanism and failure mechanism of epoxy-based advanced packaging materials, this paper gives a review of related previous research, and lays a theoretical foundation for the upcoming research. The classification and generation mechanism of residual stress are clarified in this paper, which provides data support for future related research.

ANALYTICAL SOLUTIONS OF THERMAL STRESS DISTRIBUTION IN PLASTIC ENCAPSULATED INTEGRATED CIRCUIT PACKAGES

Due to the mismatch in the coefficients of thermal expansion of slicon chip and the surrounding plastic encapsulation materials, the induced thermal stress is the main cause for die and encapsulant rupture. The corner geometry is simplified as the semi_infinite wedge. Then the two_dimensional thermal stress distribution around the corner was obtained explicitly. Based on the stress calculation, the strain energy density factor criterion is used to evaluate the strength of the structure, which can not only give the critical condition for the stresses, but also determine the direction of fracture initiation around the corner.

Interfacial microstructure and properties of diamond/Cu-xCr composites for electronic packaging applications

Diamond/Cu-xCr composites were fabricated by pressure infiltration process.The thermal conductivities of diamond/Cu-xCr（x = 0.1,0.5,0.8） composites were above 650 W/mK,higher than that of diamond/Cu composites.The tensile strengths ranged from 186 to 225 MPa,and the bonding strengths ranged from 400 to 525 MPa.Influences of Cr element on the thermo-physical properties and interface structures were analyzed.The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys.When the Cr concentration was up to 0.5 wt.%,the content of the Cr3C2 layer was constant.As the thickness of the Cr3C2 layer became larger,the composites showed a lower thermal conductivity but higher mechanical properties.The coefficients of thermal expansion（CTE） of diamond/Cu-xCr（x = 0.1,0.5,0.8） composites were in good agreement with the predictions of the Kerner＇ model.

Semisolid forging electronic packaging shell with silicon carbon-reinforced copper composites

To fabricate electronic packaging shell of coppermatrix composite with characteristics of high ther mal conductivity and low thermal expansion coefficient, semisolid forming technology, and powder metallurgy was combined. Conventional mechanical mixing of Cu and SiC could have insufficient wettability, and a new method of semisolid processing was introduced for billets preparation. The SiC/Cu composites were first prepared by PM, and then, semisolid reheating was performed for the successive semisolid forging. Composite billets with SiC 35 % vol ume fraction were compacted and sintered pressurelessly, microstructure analysis showed that the composites pre pared by PM had high density, and the combination between SiC particles and Cualloy was good. Semisolid reheating was the crucial factor in determining the micro structure and thixotropic property of the billet. An opti mised reheating strategy was proposed： temperature 1,025 ℃and holding time 5 min.

STUDY OF THERMAL DEFORMATION OF MICROELECTRONICS PACKAGING PRODUCT BY INTERFEROMETRIC TECHNIQUE

In this paper, the out-of-plane deformation of silicon surface of Direct Chip Attachment (DCA) assembly, under thermal loading, was measured in real-time by Twyman/Green interferometry. The contour maps of the out-of-plane displacement fields of silicon surface under thermal loading and cycling of various temperature were obtained, Experimental results show that the relation between the out-of-plane displacement and temperature is nonlinear and varies with temperature cycling, due to nonlinear mechanical behavior of the materials used in electronic packaging. A comparison of the aut-of-plane displacement Gelds of silicon surface measured by T/G interferometry in real-time and replicating technique of high temperature specimen grating of moire interferometry was made.

Al-50 wt%Si Alloy by Spark Plasma Sintering(SPS)for Electronic Packaging Materials

A hypereutectic Al-50 wt%Si alloy for electronic packaging was prepared by spark plasma sintering(SPS)technology using gas-atomized Al-50 wt%Si powder.The effect of sintering parameters on alloy phase composition,microstructure,thermal performance and the tensile strength at different temperatures was investigated.The experimental results show that the alloy can obey the diffraction peaks of silicon and aluminum without other peaks appearing.The primary silicon in the prepared alloy can be evenly distributed in the aluminum matrix.The coefficient of thermal expansion(CTE)and thermal conductivity(TC)of the alloy will improve with the increase of sintering temperature,but they will decrease after sintering for a long time,which is caused by the large difference of coefficient of thermal expansion between silicon and aluminum.The tensile properties of the alloy at room temperature will increase with the increase of sintering temperature,but higher test temperatures will inhibit the tensile properties except the elongation.The morphology and fracture mode of the tensile fracture are also analyzed to determine the good bonding strength of the alloy.

Reliability aspects of electronics packaging technology using anisotropic conductive adhesives

Anisotropic conductive adhesive technology for electronics packaging and interconnect application has significantly been developed during the last few years. It is time to make a summary of what has been done in this field. The present paper reviews the technology development, especially from the reliability point of view. It is pointed out that anisotropic conductive adhesives are now widely used in many applications and the reliability data and models have been developed to a large extent for anisotropic conductive adhesives in various applications.

RUN TO RUN CONTROL OF TIME-PRESSURE DISPENSING SYSTEM

In electronics packaging the time-pressure dispensing system is widely usedto squeeze the adhesive fluid in a syringe onto boards or substrates with the pressurized air.However, complexity of the process, which includes the air-fluid coupling and the nonlinearuncertainties, makes it difficult to have a consistent process performance. An integrated dispensingprocess model is first introduced and then its input-output regression relationship is used todesign a run to run control methodology for this process. The controller takes EWMA scheme and itsstability region is given. Experimental results verify the effectiveness of the proposed run to runcontrol method for dispensing process.

Preparation,crystallization,and wetting of ZnO-Al_2O_3-B_2O_3-SiO_2 glass-ceramics for sealing to Kovar

A novel type of ZnO-Al2O3-B2O3-SiO2 glass-ceramics sealing to Kovar in electronic packaging was developed, whose thermal expansion coefficient and electrical resistance are 5.2× 10^-6/℃ and over 1×10^13 Ω·cm, respectively. The major crystalline phases in the glass-ceramic seals were ZnAl2O4, ZnB2O4, and NaSiAl2O4. The dielectric resistance of the glass-ceramic could be remarkably enhanced through the control of alkali metal ions into crystal lattices. It was found that crystallization happened first on the surface of the sample, leaving the amorphous phase in the inner, which made the glass suitable for sealing. The glass-ceramic showed better wetting on the Kovar surface, and sealing atmosphere and temperature had great effect on the wetting angle. Strong interracial bonding was obtained, which was mainly attributed to the interracial reaction between SiO2 and FeO or Fe3O4.

A supersaturated Cu-Ag nanoalloy joint with ultrahigh shear strength and ultrafine nanoprecipitates for power electronic packaging

Ag-Cu bimetallic nanoalloy,integrating the advantages of reducing migration and cost of nano-Ag and alleviating oxidation of nano-Cu,is a prospective bonding material for power electronic packaging.The Ag-coated Cu nanoparticles(Cu@Ag NPs)paste can execute bonding with high quality at 250℃,and the achieved supersaturated Ag-Cu nanoalloy joint with ultrahigh shear strength(152 MPa)dramatically exceeds most nano-paste joints.The interstitial solid solutions with atomic-level metallurgical bonds at the interface dominantly promoted the shear strength.Besides,the numerous ultrafine nanograin,high proportion of low angle grain boundaries(7.44%)without deformation,and the Cu nanoprecipitates in the joint would improve subordinately.Furthermore,the high content(16.8%)of∑3 twin boundaries would contribute to the electrical and thermal conductivity.Thus,the multiple strengthening mechanisms with the solid solution,the second precipitated phase,and ultrafine nanograin can dramatically enhance shear strength and electro-thermal conductivity of joints for high-temperature device packaging.

Discharge Characteristics of Bubbles at Interface Between AIN Ceramic and FC-72 Liquid

In order to evaluate the insulation of two-phase immersion cooling in the HV power electronic package,the insulation degradation of the dielectric interface induced by bubbles is investigated.In this paper,a test strategy with 50 Hz unipolar DC and AC combined voltage for partial discharge(PD)at boiling interface of AlN ceramic is proposed.The insulation threshold of an AlN ceramic surface is acquired in several dielectric environments,such as air,FC-72 liquid(FC-72,a Fluorinert^(TM) from 3^(TM)),FC-72 vapor,and boiling state of FC72.This reveals the deterioration of boiling on the insulation of the surface immersed in the dielectric refrigerant.To investigate the mechanism of the PD feature at the boiling interface,the PD patterns of the unrestricted bubble and the accumulated bubble are acquired and contrastively analyzed.Combined with the feature of the back discharge and the bubble behavior,the charged vapor-ceramic interface is relatively stable due to the accumulated vapor layer.This stability of the charged vaporceramic interface is broken if the bubble is unrestricted.Besides,it is discovered that the vapor-liquid interface inside the bubble may be another charged interface,which can also trigger a back discharge.

Advanced hermetic electronic packaging based on lightweight silicon/aluminum composite produced by powder metallurgy technique

Silicon/aluminum(Si/Al)composite is a kind of lightweight electronic packaging material that received a lot of attention in the past 20 years.In this paper,a series of Si/Al composites with lowered coefficient of thermal expansion(CTE)and high thermal conductivity were produced by powder metallurgy(PM).The Si/Al composites are fully dense and have fine Si particles uniquely distributed within pure Al matrix.Three 50%Si/Al composites were designed to have strength in the range of 185-290 MPa to meet different demands,while the other properties keep invariable.Fracture toughness of the composites is measured to be 9-10 MPa·m^(1/2).The composites were machined to 50%Si/Al housings and 27%Si/Al lids.Both the hermeticities of housings before and after laser-beam-welding sealing are determined.The measured leak rate of composites and sealed housings is in magnitude order of 1×10^(-10)and 1×10^(-9)Pa·m^(3)·s^(-1),respectively,suggesting high hermeticity.The good hermeticity is attributed to the full dense materials,good weldability,and extremely low weld porosity.The present Si/Al composites are expected to be extensively used in highly hermetic electronic packages.

Carbon nanotubes for electronics manufacturing and packaging:from growth to integration

Carbon nanotubes （CNTs） possess excellent electrical, thermal and mechanical properties. They are light in weight yet stronger than most of the other materials. They can be made both highly conductive and semi-conductive. They can be made from nano-sized small catalyst particles and extend to tens of millimeters long. Since CNTs emerged as a hot topic in the early 1990s, numerous research efforts have been spent on the study of the various properties of this new material. CNTs have been proposed as alternative materials of potential excellence in a lot of applications such as electronics, chemical sensors, mechanical sensors/actuators and composite materials, etc. This paper reviews the use of CNTs particularly in electronics manufacturing and packaging field. The progresses of three most important applications, including CNT-based thermal interface materials, CNT-based interconnections and CNT-based cooling devices are reviewed. The growth and post-growth processing of CNTs for specific applications are introduced and the tai- loring of CNTs properties, i.e., electrical resistivity, thermal conductivity and strength, etc., is discussed with regard to specific application requirement. As the semiconductor industry is still driven by the need of getting smaller and faster, CNTs and the related composite systems as emerging new materials are likely to provide the solution to the future challenges as we make more and more complex electronics devices and systems.

Conductive microsphere monolayers enabling highly conductive pressure-sensitive adhesive tapes for electromagnetic interference shielding

Conductive adhesive tape is one kind of electromagnetic interference(EMI)shielding materials for electronic packaging.However,the inferior conductivity of the pressure-sensitive adhesive(PSA)layer results in serious electromagnetic leakage at the conjunctions between the conductive tapes and target objects.Adding conductive fillers is a traditional method for highly conductive adhesive tapes.However,the content of conductive fillers is needed to reach the percolation threshold,which is usually as high as tens of percent.High-content fillers result in significant loss of adhesive property and high fabrication cost.Herein,we introduce a rational architecture of conductive microsphere monolayer(CMM)in the PSA layer.The CMM connects the top and bottom surfaces of the PSA layer and improves its conductivity in the z-direction.Importantly,low contents of conductive microspheres(≤5%(mass fraction,w))can achieve the target of conductivity improvement,but not result in the serious loss of the adhesive property.Therefore,the strategy of CMMs can balance the tradeoff between the conductivity and the adhesive property of conductive PSA tapes.Finally,we demonstrate the superior EMI shielding performance of as-made conductive adhesive tapes,indicating their potential applications as the advanced EMI shielding materials in the electronic packaging.

High sensitivity fiber Bragg grating pressure difference sensor

Based on the effect of fiber Bragg grating (FBG) pressure difference sensitivity enhancement by encapsulating the FBG with uniform strength beam and metal bellows, a FBG pressure difference sensor is proposed, and its mechanism is also discussed. The relationship between Bragg wavelength and the pressure difference is derived, and the expression of the pressure difference sensitivity coefficient is also given. It is indicated that there is good linear relation between the Bragg wavelength shift and the pressure difference of the sensor. The theoretical and experimental pressure difference sensitivity coefficients are 38.67 and 37.6 nm/MPa, which are 12890 and 12533 times of that of the bare FBG, respectively. The pressure difference sensitivity and dynamic range can be easily changed by changing the size, Young's modulus, and Poisson's ratio of the beam and the bellows.

On numerical investigation of nonuniformity in cooling characteristic for different materials of target surfaces being exposed to impingement of air jet

Heat transfer using air jet impingement technique is one of the conspicuous tasks in the looming world of electronic packaging system.Here,the material selection of heat sink becomes one of the prior and important assignments to construct a heat sink with desired characteristic cooling rate.In order to study the material effect of heat sink over the cooling characteristic,the present work takes an initiative in plotting the Nusselt magnitude over the radial distance for different material of heat sink.This is done by computing the flow regime and heat transfer characteristic of a 2D axis symmetric geometry in commercial simulating software,ANSYS CFX.The computation of cooling characteristic in form of Nusselt profile is done using SST+Gamma–theta turbulence model.Since the prediction of heat interaction due to the intermediacy and transition in the flow regime is a unique issue of this problem.The results for Nusselt curve signifies a tangible elevation in local Nusselt value(nonuniformity)with decrease in thermal diffusivity of target surface.Also the nonuniformity is observed to vanish above a critical range(66.76mm2/s)of thermal diffusivity.This happens due to presences of abnormal turbulence of heat flow which occurs inside the target surface.Since the variation in thermal diffusivity causes some imbalance competition between the heat storage and dissipation capabilities.Above all the target surface carrying thermal diffusivity less than 66.76mm2/s possesses a dominating heat storage capability,on behalf of which some heat transfer occurring in near jet and far jet regions are being restricted.These are transferred towards stagnation region in radial direction.