Fabrication and thermo-physical properties of TiB_(2p)/Cu composites for electronic packaging applications

TiB_(2p)/Cu composites with high reinforcement content(φ_(p)=50%,58%and 65%)for electronic packaging applications were fabricated by squeeze casting technology.The microstructures and thermo-physical properties of the TiB_(2p)/Cu composites were investigated.The results show that TiB2 particles are homogeneous and distribute uniformly,and the TiB2-Cu interfaces are clean and free-from interfacial reaction products and amorphous layers,the densifications of the TiB_(2p)/Cu composites are higher than 98.2%. The mean linear coefficients of thermal expansion at 20-100℃for TiB_(2p)/Cu composites range from 8.3×10^(-6)to 10.8×10^(-6)/K and decrease with increasing volume fraction of TiB2.The experimental coefficients of thermal expansion agree well with the predicted values based on Turner’s model.The thermal conductivities of TiB_(2p)/Cu composites range from 167.3 to 215.4 W/(m·K),decreasing with increasing volume fraction TiB2.

Fabrication and characterization of high dense Mo/Cu composites for electronic packaging applications

For electronic packaging applications,Mo/Cu composites with volume fractions of 55%-67% Mo were fabricated by the patented squeeze-casting technology. The microstructures and properties of the Mo/Cu composites were investigated. The results show that Mo particles are homogeneous and uniformly,and the Mo-Cu interfaces are clean and free-from interfacial reaction products and amorphous layers,the densifications of the Mo/Cu composites are higher than 99%. The mean linear coefficients of thermal expansion(20-100 ℃) of Mo/Cu composites range from 7.9 to 9.3×10-6/℃ and decrease with increasing volume fraction of Mo. The experimental coefficients of thermal expansion agree well with predicted values based on Kerner's model. The thermal and electric conductivities of Mo/Cu composites are in range of 220-270 W/(m·℃) and 22-28 MS/m,respectively,and decrease with increasing volume fraction of Mo. The achievement of higher thermal and electric conduction is attributed to the full densities and high purity,which are obtained through the cost-effective squeeze-casting technology processes.

Microstructure and properties of electronic packaging shell with high silicon carbide aluminum-base composites by semi-solid thixoforming

The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.

Mechanical, electrical, and thermal expansion properties of carbon nanotube-based silver and silver–palladium alloy composites

The mechanical, electrical, and thermal expansion properties of carbon nanotube（CNT）-based silver and silver–palladium（10：1, w/w） alloy nanocomposites are reported. To tailor the properties of silver, CNTs were incorporated into a silver matrix by a modified molecular level-mixing process. CNTs interact weakly with silver because of their non-reactive nature and lack of mutual solubility. Therefore, palladium was utilized as an alloying element to improve interfacial adhesion. Comparative microstructural characterizations and property evaluations of the nanocomposites were performed. The structural characterizations revealed that decorated type-CNTs were dispersed, embedded, and anchored into the silver matrix. The experimental results indicated that the modification of the silver and silver–palladium nanocomposite with CNT resulted in increases in the hardness and Young＇s modulus along with concomitant decreases in the electrical conductivity and the coefficient of thermal expansion（CTE）. The hardness and Young＇s modulus of the nanocomposites were increased by 30%？40% whereas the CTE was decreased to 50%-60% of the CTE of silver. The significantly improved CTE and the mechanical properties of the CNT-reinforced silver and silver–palladium nanocomposites are correlated with the intriguing properties of CNTs and with good interfacial adhesion between the CNTs and silver as a result of the fabrication process and the contact action of palladium as an alloying element.

Thermal expansion and mechanical properties of high reinforcement content SiC_(p)/Cu composites fabricated by squeeze casting technology

High reinforcement content SiCp/Cu composites (φp=50%, 55% and 60%) for electronic packaging applications were fabricated by patent cost-effective squeeze-casting technology. The composites appear to be free of pores, and the SiC particles are distribute uniformly in the composites. The mean linear coefficients of thermal expansion (CTEs, 20-100 ℃ ) of as-cast SiCp/Cu composites range from 8.8×10-6 ℃-1 to 9.9×10-6 ℃-1 and decrease with the increase of SiC content. The experimental CTEs of as-cast SiCp/Cu composites agree well with the predicted values based on Kerner model. The CTEs of composites reduce after annealing treatment due to the fact that the internal stress of the composite is released. The Brinell hardness increases from 272.3 to 313.2, and the modulus increases from 186 GPa to 210 GPa for the corresponding composites. The bending strength is larger than 374 MPa, but no obvious trend between bending strength and SiCp content is observed.

Microstructure and thermal properties of copper matrix composites reinforced with titanium-coated graphite fibers

Milled form of mesophase pitch-based graphite fibers were coated with a titanium layer using chemical vapor deposition technique and Ti-coated graphite fiber/Cu composites were fabricated by hot-pressing sintering. The composites were characterized with X-ray diffraction, scanning/transmission electron microscopies, and by mea- suring thermal properties, including thermal conductivity and coefficient of thermal expansion （CTE）. The results show that the milled fibers are preferentially oriented in a plane perpendicular to the pressing direction, leading to anisotropic thermal properties of the composites. The Ti coating reacted with graphite fiber and formed a continuous and uniform TiC layer. This carbide layer establishes a good metallurgical interracial bonding in the composites, which can improve the thermal properties effectively. When the fiber content ranges from 35 vol% to 50 vol%, the in-plane thermal conductivities of the composites increase from 383 to 407 W.（m.K）-~, and the in-plane CTEs decrease from 9.5 x 10-6 to 6.3 10-6 K-1.

Effects of boron on the microstructure and thermal properties of Cu/diamond composites prepared by pressure infiltration

Diamond reinforced copper（Cu/diamond） composites were prepared by pressure infiltration for their application in thermal management where both high thermal conductivity and low coefficient of thermal expansion（CTE） are important.They were characterized by the microstructure and thermal properties as a function of boron content,which is used for matrix-alloying to increase the interfacial bonding between the diamond and copper.The obtained composites show high thermal conductivity（660 W/（m·K）） and low CET（7.4×10-6 K-1） due to the formation of the B13C2 layer at the diamond-copper interface,which greatly strengthens the interfacial bonding.Thermal property measurements indicate that in the Cu-B/diamond composites,the thermal conductivity and the CTE show a different variation trend as a function of boron content,which is attributed to the thickness and distribution of the interfacial carbide layer.The CTE behavior of the present composites can be well described by Kerner＇s model,especially for the composites with 0.5wt% B.

Pressureless infiltration processing and thermal properties of SiCp/Al composites with high SiC particle content

SiCp/1060Al, SiCp/ZL101,SiCp/ZL102 composites with SiCp volume fraction of 55% were fabricated by pressureless infiltration. The microstructure was examined and thermal properties were characterized for SiCp/Al composites. The results show that the composites are dense and macroscopically homogeneous. With the increase of temperature, the mean linear coefficient of thermal expansion(CTE) at 25-200℃of the composites increases and ranges from 7.23×10-6 to 10.4×10-6K-1, but thermal conductivity declines gradually at the same time. With the increase of Si content in the Al matrix, CTE of the composites declines and thermal conductivity also declines but not linearly, when Si content is up to 7%, the average thermal conductivity is 140.4 W/(m·K), which is close to that of the SiCp/1060Al composite (144.6 W/(m·K)). While Si content is 11.7%, the average thermal conductivity declines markedly to 87.74 W/(m·K). The annealing treatment is better than the solution aging treatment in reducing CTE and improving thermal conductivity of the composites. Compared with conventional thermal management materials, SiCp/Al composites are potential candidate materials for advanced electronic packaging due to their tailorable thermo-physical properties.

Thermal properties of diamond/Al composites by pressure infiltration:comparison between methods of coating Ti onto diamond surfaces and adding Si into Al matrix

This study was pertained to the effects of Ti coating on diamond surfaces and Si addition into Al matrix on the thermal conductivity（TC） and the coefficient of thermal expansion（CTE） of diamond/Al composites by pressure infiltration.The fracture surfaces,interface microstructures by metal electro-etching and interfacial thermal conductance of the composites prepared by two methods were compared.The results reveal that Ti coating on diamond surfaces and only12.2 wt% Si addition into Al matrix could both improve the interfacial bonding and increase the TCs of the composites.But the Ti coating layer introduces more interfacial thermal barrier at the diamond/Al interface compared to adding 12.2 wt% Si into Al matrix.The diamond/Al composite with 12.2 wt% Si addition exhibits maximum TC of 534 W·m^-1·K^-1and a very low CTE of 8.9×10^-6K^-1,while the coating Ti-diamond/Al composite has a TC of 514 W·m^-1·K^-1 and a CTE of 11.0×10^-6K^-1.

Experimental study on thermophysical properties of C/C composites at high temperature

The coefficient of thermal expansion, thermal diffusivity and specific heat of C/C composites from room temperature to ultra high temperature were experimentally investigated. Thermal conductivity and thermal stress resistance of the composites were therefore computed based on experimental results. The results show that the composite has a very low thermal expansion coefficient. Thermal diffusivity decreases exponentially with temperature increase. The specific heat increases linearly as the temperature rises, and the variation trend of thermal conductivity is similar to that of thermal diffusivity. The thermal stress coefficient of C/C composite has little change with temperature variation, and thermal stress resistance of the composite at high temperature is stable.

(La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4: A high-entropy rare-earth phosphate monazite ceramic with low thermal conductivity and good compatibility with Al2O3

Low thermal conductivity, matched thermal expansion coefficient and good compatibility are general requirements for the environmental/thermal barrier coatings(EBCs/TBCs) and interphases for Al2O3 f/Al2O3 composites. In this work, a novel high-entropy(HE) rare-earth phosphate monazite ceramic (La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4 is designed and successfully synthesized. This new type of HE rare-earth phosphate monazite exhibits good chemical compatibility with Al2O3, without reaction with Al2O3 as high as 1600℃ in air. Moreover, the thermal expansion coefficient(TEC) of HE (La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4(8.9 × 10^-6/℃ at 300–1000℃) is close to that of Al2O3. The thermal conductivity of HE (La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4 at room temperature is as low as 2.08 W·m^-1·K^-1, which is about 42% lower than that of La PO4. Good chemical compatibility, close TEC to that of Al2O3, and low thermal conductivity indicate that HE (La0.2Ce0.2Nd0.2Sm0.2Eu0.2)PO4 is suitable as a candidate EBC/TBC material and an interphase for Al2O3 f/Al2O3 composites.

Experimental and Numerical Analysis of Thermal Deformation of Electronic Packages,QFP and MCM

Moiré inteferometry and FEA (finite element analysis) were used to evaluate the thermal deformation of two electronic packages, QFP (quad flat package) and MCM (multi chip module).Thermal loading was applied by cooling the packages from 100℃ to room temperature (25℃). Moiré fringes were obtained on the cross sections of the packages to clarify the effect of the CTE (coefficient of thermal expansion) mismatch of the micro components, such as silicon, metal and resin. In QFP, the effects of packaging resin and PCB (printed circuit board) on the thermal deformation were investigated. The effect of location of three silicon chips in MCM was also examined.

Electronic Transport in Alloys with Phase Separation (Composites)

A measure for the efficiency of a thermoelectric material is the figure of merit defined by ZT = S2T/ρκ, where S, ρ and κ are the electronic transport coefficients, Seebeck coefficient, electrical resistivity and thermal conductiviy, respectively. T is the absolute temperature. Large values for ZT have been realized in nanostructured materials such as superlattices, quantum dots, nanocomposites, and nanowires. In order to achieve further progress, (1) a fundamental understanding of the carrier transport in nanocomposites is necessary, and (2) effective experimental methods for designing, producing and measuring new material compositions with nanocomposite-structures are to be applied. During the last decades, a series of formulas has been derived for calculation of the electronic transport coefficients in composites and disordered alloys. Along the way, some puzzling phenomenons have been solved as why there are simple metals with positive thermopower? and what is the reason for the phenomenon of the “Giant Hall effect”? and what is the reason for the fact that amorphous composites can exist at all? In the present review article, (1), formulas will be presented for calculation of σ = (1/ρ), κ, S, and R in composites. R, the Hall coefficient, provides additional informations about the type of the dominant electronic carriers and their densities. It will be shown that these formulas can also be applied successfully for calculation of S, ρ, κ and R in nanocomposites if certain conditions are taken into account. Regarding point (2) we shall show that the combinatorial development of materials can provide unfeasible results if applied noncritically.

金刚石粒径对金刚石/Cu-B合金复合材料热物理性能的影响

采用Cu-B合金为基体,选用粒径分别为110、230、550μm的金刚石颗粒作为增强体,利用气压熔渗工艺在1100℃、10 MPa气体压力下制备金刚石/Cu-B合金复合材料,研究金刚石颗粒粒径对复合材料组织结构、界面相分布及热物理性能的影响。结果表明,随着金刚石粒径的增大,复合材料热导率上升,热膨胀系数减小,复合材料界面处硼碳化合物含量增加,界面结合情况得到改善。由金刚石颗粒粒径为550μm时,复合材料热导率最高,可达680.3 W/(m·K),热膨胀系数最小,为4.905×10^(−6)K^(−1),符合高效热管理器件对金刚石/金属基复合材料的热物理性能要求,在电子产品散热器件方面具有良好的应用前景。

铜基高导热低膨胀复合材料研究进展

铜基高导热低膨胀复合材料是一类重要的电子封装材料,介绍了铜与钨、钼、碳化硅、因瓦合金、碳纤维、金刚石等复合材料的制备工艺、导热性能和热膨胀性能,并分析对比了几种热导率和热膨胀系数的理论计算模型。

预制体结构对SiC_(f)/SiC复合材料力学和热性能的影响

本文采用化学气相渗透法制备了具有二维多层、三维角联锁机织和多轴三维编织三种预制体结构的SiC_(f)/SiC复合材料。在综合分析纤维排列、SiC基体和孔隙分布的基础上,详细讨论了预制体结构对SiC_(f)/SiC复合材料力学性能和热性能的影响。结果表明,复合材料的力学性能和热导率受纤维排列方式和复合材料密度的综合影响,而热膨胀系数主要受纤维排列方式的影响。此外,二维多层复合材料、三维角联锁机织复合材料和多轴三维编织复合材料的热导率可以分别用串联模型和平行模型来解释。多轴三维编织复合材料由于内部具有连续的可以作为热流快速通道的三维网状SiC基体层,因此具有较高的室温热导率。而随着温度的升高,SiC声子间的散射逐渐增强,SiC基体层在多轴三维编织复合材料中作为声子传播快速通道的作用逐渐减弱,热导率随温度降低的趋势更明显。

热双金属复合材料的研究现状与展望

热双金属复合材料是一种利用先进复合技术,使两种及以上具有不同热膨胀系数的金属复合形成冶金结合的层状复合材料。该材料可发挥不同金属的自身性能优势,实现复合材料的性能互补,同时因其形状可随环境温度改变而调控的特性,被广泛应用于电子电器领域。随着电子科学技术飞速发展,对热双金属产品品质的要求也日益提高,总结并展望该材料在该领域的研究现状与前景意义重大。围绕电子电器领域的热双金属复合材料,综述了其制备原理、特性、组元构成、主要性能指标和制造技术。热双金属复合材料的工作原理是通过复合技术将两种及以上的金属层交替叠加并紧密结合,由于不同金属各异的热膨胀系数,当通过环境传导或自我发热方式受到热力刺激时,整个材料发生弹性弯曲变形而发生形状变化。热双金属的组元构成是影响其性能的重要因素,选择合适的金属组元可以使其具备更优异的性能。常见的组元包括钢-铝、铜-铝等,高膨胀层一般为锰铜合金,低膨胀层一般为铁镍合金。通过合理设计不同金属的层厚比例和堆叠顺序,可以调控材料的热膨胀性能和机械强度,主要性能指标包括材料的热膨胀系数、电导率和机械强度等,其中热膨胀系数决定了材料在不同温度下的形状变化程度,电导率影响了材料在电子电器中的导电性能,而机械强度则直接关系到材料的使用寿命和稳定性。制造技术是影响热双金属复合材料品质的关键因素之一,常见的制造技术包括爆炸复合、轧制复合和粉末冶金等。不同的制造技术会影响材料的结合程度、微观结构及性能稳定性,因此在选择制造技术时需要考虑到具体的应用场景和要求。最后,对热双金属复合材料未来的主要发展方向进行了展望。

一步法制备MgO-Nd_(2)Zr_(2)O_(7)复相陶瓷惰性燃料基材的热物理性能

MgO-Nd_(2)Zr_(2)O_(7)(M-NZO)复相陶瓷作为一种潜在的惰性燃料基材,可以用于替代(U,Pu)O_(2)混合氧化物燃料中的UO_(2),并将PuO_(2)弥散在其中以制备惰性基材燃料。本文采用一步法在1500℃烧结24 h制备了M-NZO复相陶瓷,在物相组成、微观形貌的分析基础上,系统研究了其热导率和热膨胀系数等热物理性能。结果表明利用一步法制备的M-NZO复相陶瓷仅由MgO和Nd_(2)Zr_(2)O_(7)烧绿石两相组成,两相的平均晶粒尺寸为0.75μm和0.70μm,且制备的复相陶瓷结构致密、孔隙率低。热物理性能测试结果表明一步法制备的M-NZO复相陶瓷在1400℃时的热导率是UO_(2)陶瓷的2.1~3.8倍,且在测试温度范围内,一步法制备的M-NZO复相陶瓷具有更加优异的热导率,在高温下(800℃)比文献中采用两步法制备的M-NZO复相陶瓷高出约2 W·m^(-1)·K^(-1)。热膨胀方面,一步法制备的M-NZO复相陶瓷的热膨胀系数为12.3×10^(-6)~14.1×10^(-6)/K,与两步法制备的M-NZO复相陶瓷热膨胀系数相当。此外,M-NZO复相陶瓷的热导率和热膨胀系数均随MgO含量的增大而变高,结合理论最小热导率计算结果可以得出,最佳的M-NZO复相陶瓷化学组成为0.5M-0.5NZO。以上结果表明,一步法制备的M-NZO复相陶瓷具有优异的热导率和稳定的热膨胀性能,为其在惰性基材燃料中的应用提供了更多的选择和热物理性能基础数据上的支持。

电子封装用导热有机硅复合材料的研究进展

本文对电子封装用导热有机硅复合材料的导热机理和常用导热填料进行了介绍,综述了填充型高导热有机硅复合材料的制备策略和研究进展,并展望了电子封装用导热有机硅复合材料未来的研究方向。

电子封装用金属基复合材料的研究进展

金属基复合材料凭借其优异的性能以及较成熟的制备工艺,成为电子封装领域研究的重要方向之一。综述典型的电子封装用金属基复合材料的研究现状,阐述金属基复合材料的热物理性能设计,列举铝基、铜基电子封装复合材料热物理性能的影响因素和改进措施,介绍常见的制备方法,最后对金属基电子封装材料的发展趋势进行展望。