The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and...The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.展开更多
Spin noise spectroscopy （SNS） of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the ...Spin noise spectroscopy （SNS） of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons~ which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.展开更多
基金Supported by the National Natural Science Foundation Program of China under Grant Nos 11274302,11474276 and 61290303
文摘The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFA0301202the National Basic Research Program of China under Grant No 2013CB922304+1 种基金the National Natural Science Foundation of China under Grant Nos 91321310 and 11674311the K.C.Wong Education Foundation
文摘Spin noise spectroscopy （SNS） of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons~ which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.
