We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions...We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.展开更多
The ionization process of B2＋ by H＋ impact is studied using the continuum-distorted-wave eikonal-initial-state （CDW-EIS） method and the modified free electron peak approximation （M-FEPA）, respectively. Total, si...The ionization process of B2＋ by H＋ impact is studied using the continuum-distorted-wave eikonal-initial-state （CDW-EIS） method and the modified free electron peak approximation （M-FEPA）, respectively. Total, single-, and double- differential cross sections from ls and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Com- parison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter （BE） bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single- differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the ls orbital. Based on Ref. [1], the Compton profiles of B2＋ for ls and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61504047the Fujian Provincial Department of Science and Technology under Grant No 2016J05159
文摘We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator（SOI） wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.
基金Project supported by the National Basic Research Program of China (Grant No. 2013CB922200)the National Natural Science Foundation of China (Grant Nos. 11005049, 11025417, 10979007, and 10974021)
文摘The ionization process of B2＋ by H＋ impact is studied using the continuum-distorted-wave eikonal-initial-state （CDW-EIS） method and the modified free electron peak approximation （M-FEPA）, respectively. Total, single-, and double- differential cross sections from ls and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Com- parison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter （BE） bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single- differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the ls orbital. Based on Ref. [1], the Compton profiles of B2＋ for ls and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.
