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Precise Control of Temperature Rising Speed of Wafer during Rapid Thermal Processing
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作者 Shigeki Hirasawa Tsuyoshi Kawanami Katsuaki Shirai Tetsuya Urimoto Naoki Morimoto Atsushi Fujiwara Sadanori Toda 《Journal of Mechanics Engineering and Automation》 2014年第5期359-364,共6页
In rapid thermal processing of a semiconductor wafer, it is important to keep a given temperature rising speed of the wafer during the temperature rising process. We made an experimental apparatus to measure the tempe... In rapid thermal processing of a semiconductor wafer, it is important to keep a given temperature rising speed of the wafer during the temperature rising process. We made an experimental apparatus to measure the temperature rising speed of a ceramic ball of 2 mm in diameter heated with four halogen lamp heaters. The heating rate of the halogen lamp heaters was controlled by computer to keep a given temperature rising speed of 50 ℃/s with a controlling time interval of 0.1 s. We examined the effect of various heating control methods on the error of the temperature rising speed of the ceramic ball. We found that a combined method of control with prepared correlation and PID (proportional integral derivative) control is a good method to decrease the error of the temperature rising speed. The average error of the temperature rising speed is 0.5 ℃/s, and the repetition error is almost zero for the temperature rising speed of 50 ℃/s from 330 ℃ to 370 ℃. We also measured the effects of artificial control delay time and measuring error of the monitoring temperature on the error of the temperature rising speed. 展开更多
关键词 Electronic equipment manufacturing rapid heating heat treatment temperature control PID control.
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