In this paper the design and implementation of sixth-order lowpass elliptic switched-capacitor filter( SCF) for interface circuit of Micro-Electro-Mechanical System( MEMS) sensor are presented. This work aims to lower...In this paper the design and implementation of sixth-order lowpass elliptic switched-capacitor filter( SCF) for interface circuit of Micro-Electro-Mechanical System( MEMS) sensor are presented. This work aims to lower total harmonic distortion( THD) without deteriorating other performances. After system design in Simulink,the filter is realized in transistor level and finally fabricated in Central Semiconductor Manufacturing Corporation( CSMC) 0.5 μm metal-oxide-semiconductor( CMOS) technology. Typical measured results are: it operates with 25: 1 clock-to-corner frequency ratio and a 10 k Hz maximum corner frequency. The maximum passband ripple is about 0.49 d B and the minimum stopband rejection is 40 d B for the temperature from-20 ℃to 80 ℃. For the 250 k Hz clock frequency setting,given the 1 k Hz,- 8 d BVrms input signal,the measured worst case THD is-64 d B. The active area of the chip is 2.8 mm2 with 8 pads. The analog power dissipation is10 m W from a 5 V power supply.展开更多
基金Sponsored by the Fundamental Research Funds for the Central Universities(Grant No.HIT.NSRIF.2013040)
文摘In this paper the design and implementation of sixth-order lowpass elliptic switched-capacitor filter( SCF) for interface circuit of Micro-Electro-Mechanical System( MEMS) sensor are presented. This work aims to lower total harmonic distortion( THD) without deteriorating other performances. After system design in Simulink,the filter is realized in transistor level and finally fabricated in Central Semiconductor Manufacturing Corporation( CSMC) 0.5 μm metal-oxide-semiconductor( CMOS) technology. Typical measured results are: it operates with 25: 1 clock-to-corner frequency ratio and a 10 k Hz maximum corner frequency. The maximum passband ripple is about 0.49 d B and the minimum stopband rejection is 40 d B for the temperature from-20 ℃to 80 ℃. For the 250 k Hz clock frequency setting,given the 1 k Hz,- 8 d BVrms input signal,the measured worst case THD is-64 d B. The active area of the chip is 2.8 mm2 with 8 pads. The analog power dissipation is10 m W from a 5 V power supply.
