Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up...Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant Nos.2010CB923201 and 2011CB301903)+1 种基金the Ph.D. Program Foundation of Ministry of Education of China(Grant No.20110171110021)the Foundation of the Key Technologies R&D Program of Guangdong Province,China(Grant No.2010A081002005)
文摘Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.
