Numerical investigations of an optical switch based on a silicon stripe waveguide embedded with vanadium dioxide layers

A novel scheme for the design of an ultra-compact and high-performance optical switch is proposed and investigated numerically. Based on a standard silicon(Si) photonic stripe waveguide, a section of hyperbolic metamaterials(HMM) consisting of 20-pair alternating vanadium dioxide (VO_2)∕Si thin layers is inserted to realize the switching of fundamental TE mode propagation. Finite-element-method simulation results show that, with the help of an HMM with a size of 400 nm × 220 nm × 200 nm(width × height × length), the ON/OFF switching for fundamental TE mode propagation in an Si waveguide can be characterized by modulation depth(MD) of5.6 d B and insertion loss(IL) of 1.25 dB. It also allows for a relatively wide operating bandwidth of 215 nm maintaining MD > 5 dB and IL < 1.25 dB. Furthermore, we discuss that the tungsten-doped VO_2 layers could be useful for reducing metal-insulator-transition temperature and thus improving switching performance. In general, our findings may provide some useful ideas for optical switch design and application in an on-chip all-optical communication system with a demanding integration level.

In situ selective laser gas nitriding for composite TiN/Ti-6Al-4V fabrication via laser powder bed fusion

Laser-assisted gas nitriding of selective Ti-6Al-4V surfaces has been achieved during laser powder bed fusion fabrication by exchanging the argon build gas environment with nitrogen.Systematic variation of processing parameters allowed microdendritic Ti N surface coatings to be formed having thicknesses ranging from a few tens of microns to several hundred microns,with TiN dendrite microstructure volume fractions ranging from 0.6 to 0.75;and corresponding Vickers microindentation hardness values ranging from^7.5 GPa–9.5 GPa.Embedded TiN hard layers ranging from 50μm to 150μm thick were also fabricated in the laser-beam additively manufactured Ti-6Al-4V alloy producing prototype,hybrid,planar composites having alternating,ductile Ti-6Al-4V layers with a hardness of^4.5 GPa and a stiff,TiN layer with a hardness of^8.5 GPa.The results demonstrate prospects for fabricating novel,additively manufactured components having selective,hard,wear and corrosion resistant coatings along with periodic,planar or complex metal matrix composite regimes exhibiting superior toughness and related mechanical properties.

Metal-to-metal antifuse with low programming voltage and low on-state resistance

This paper＂ describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the A1-HfO2-AI antifuse. The programming voltage of the antiiikse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance （-19Ω） and low programming voltage （4.6 V） is demonstrated in the embedded Ti antifhse with 120 A H fO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.