To simplify the fabrication process and increase the versatility of neuromorphic systems,the reconfiguration concept has attracted much attention.Here,we developed a novel electrochemical VO_(2)(EC-VO_(2))device,which...To simplify the fabrication process and increase the versatility of neuromorphic systems,the reconfiguration concept has attracted much attention.Here,we developed a novel electrochemical VO_(2)(EC-VO_(2))device,which can be reconfigured as synapses or LIF neurons.The ionic dynamic doping contributed to the resistance changes of VO_(2),which enables the reversible modulation of device states.The analog resistance switching and tunable LIF functions were both measured based on the same device to demonstrate the capacity of reconfiguration.Based on the reconfigurable EC-VO_(2),the simulated spiking neural network model exhibited excellent performances by using low-precision weights and tunable output neurons,whose final accuracy reached 91.92%.展开更多
Although the research history of triboelectrification has been more than 2000 years, there are still many problems to be solved so far.The use of scanning probe microscopy provides an important way to quantitatively s...Although the research history of triboelectrification has been more than 2000 years, there are still many problems to be solved so far.The use of scanning probe microscopy provides an important way to quantitatively study the transfer, accumulation, and dissipation of triboelectric charges in the process of triboelectrification. Two-dimensional materials are considered to be key materials for new electronic devices in the post-Moore era due to their atomic-scale size advantages. If the electrostatic field generated by triboelectrification can be used to replace the traditional gate electrostatic field, it is expected to simplify the structure of two-dimensional electronic devices and reconfigure them at any time according to actual needs. Here, we investigate the triboelectrification process of various two-dimensional materials such as MoS_(2), WSe_(2),and ZnO. Different from traditional bulk materials, after two-dimensional materials are rubbed, the triboelectric charges generated may tunnel through the two-dimensional materials to the underlying substrate surface. Because the tunneling triboelectric charge is protected by the twodimensional material, its stable residence time on the substrate surface can reach more than 7 days, which is more than tens of minutes for the traditional triboelectric charge. In addition, the electrostatic field generated by the tunneling triboelectric charge can effectively regulate the carrier transport performance of two-dimensional materials, and the source–drain current of the field effect device regulated by the triboelectric floating gate is increased by nearly 60 times. The triboelectric charge tunneling phenomenon in two-dimensional materials is expected to be applied in the fields of new two-dimensional electronic devices and reconfigurable functional circuits.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61925401,92064004,61927901,and 92164302)the 111 Project (Grant No.B18001)+1 种基金support from the Fok Ying-Tong Education Foundationthe Tencent Foundation through the XPLORER PRIZE。
文摘To simplify the fabrication process and increase the versatility of neuromorphic systems,the reconfiguration concept has attracted much attention.Here,we developed a novel electrochemical VO_(2)(EC-VO_(2))device,which can be reconfigured as synapses or LIF neurons.The ionic dynamic doping contributed to the resistance changes of VO_(2),which enables the reversible modulation of device states.The analog resistance switching and tunable LIF functions were both measured based on the same device to demonstrate the capacity of reconfiguration.Based on the reconfigurable EC-VO_(2),the simulated spiking neural network model exhibited excellent performances by using low-precision weights and tunable output neurons,whose final accuracy reached 91.92%.
基金supported by the National Key Research and Development Program of China (No.2018YFA0703500)the National Natural Science Foundation of China(Nos.52232006,52188101,52102153,52072029,51991340,and 51991342)+2 种基金the Overseas Expertise Introduction Projects for Discipline Innovation (No.B14003)the China Postdoctoral Science Foundation (No.2021M700379)the Fundamental Research Funds for Central Universities(No.FRF-TP-18-001C1)。
文摘Although the research history of triboelectrification has been more than 2000 years, there are still many problems to be solved so far.The use of scanning probe microscopy provides an important way to quantitatively study the transfer, accumulation, and dissipation of triboelectric charges in the process of triboelectrification. Two-dimensional materials are considered to be key materials for new electronic devices in the post-Moore era due to their atomic-scale size advantages. If the electrostatic field generated by triboelectrification can be used to replace the traditional gate electrostatic field, it is expected to simplify the structure of two-dimensional electronic devices and reconfigure them at any time according to actual needs. Here, we investigate the triboelectrification process of various two-dimensional materials such as MoS_(2), WSe_(2),and ZnO. Different from traditional bulk materials, after two-dimensional materials are rubbed, the triboelectric charges generated may tunnel through the two-dimensional materials to the underlying substrate surface. Because the tunneling triboelectric charge is protected by the twodimensional material, its stable residence time on the substrate surface can reach more than 7 days, which is more than tens of minutes for the traditional triboelectric charge. In addition, the electrostatic field generated by the tunneling triboelectric charge can effectively regulate the carrier transport performance of two-dimensional materials, and the source–drain current of the field effect device regulated by the triboelectric floating gate is increased by nearly 60 times. The triboelectric charge tunneling phenomenon in two-dimensional materials is expected to be applied in the fields of new two-dimensional electronic devices and reconfigurable functional circuits.
