Experimental investigation on the energy evolution of dry and water-saturated red sandstones

In order to investigate the effect of water content on the energy evolution of red sandstone, the axial loading–unloading experiments on dry and water-saturated sandstone samples were conducted, and the distribution and evolution of elastic energy and dissipated energy within the rock were measured.The results show that the saturation process from dry to fully-saturated states reduces the strength, rigidity and brittleness of the rock by 30.2%, 25.5% and 16.7%, respectively. The water-saturated sample has larger irreversible deformation in the pre-peak stage and smaller stress drop in the post-peak stage.The saturation process decreases the accumulation energy limit by 38.9%, but increases the dissipated energy and residual elastic energy density, thus greatly reducing the magnitude and rate of energy release. The water-saturated sample has lower conversion efficiency to elastic energy by 3% in the prepeak region; moreover, the elastic energy ratio falls with a smaller range in the post-peak stage.Therefore, saturation process can greatly reduce the risk of dynamic disaster, and heterogeneous water content can lead to dynamic disaster possibly on the other hand.

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.