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Electronic structures of an(8,0)boron nitride/carbon nanotube heterojunction
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作者 刘红霞 张鹤鸣 +1 位作者 宋久旭 张志勇 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第1期14-16,共3页
The electronic structure of the heterojunction is the foundation of the study on its working mechanism. Models of the heterojunctions formed by an (8, 0) boron nitride nanotube and an (8, 0) carbon nanotube with C... The electronic structure of the heterojunction is the foundation of the study on its working mechanism. Models of the heterojunctions formed by an (8, 0) boron nitride nanotube and an (8, 0) carbon nanotube with C-B or C-N interface have been established. The structures of the above heterojunctions were optimized with first-principle calculations based on density functional theory. The rearrangements of the heterojunctions concentrate mainly on their interfaces. The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the heterojunctions distribute in the carbon nanotube section. As the band offsets of the above heterojunctions are achieved with the average bond energy method, the band structure is plotted. 展开更多
关键词 boron nitride/carbon nanotube heterojunction density functional theory the average bond energymethod electronic structures
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