Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure.Their characteristics are analyzed.The light emitters have high spectral purity...Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure.Their characteristics are analyzed.The light emitters have high spectral purity of 4 8nm and high electroluminescence intensity of 0 7mW while injection current is 50mA.A 1×16 array of surface emitting light device is tested on line by probes and then used for module.The light detectors have wavelength selectivity and space selectivity.The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.展开更多
文摘Both the vertical cavity surface emitting diodes and detectors are fabricated by using the epitaxial wafer with resonant cavity structure.Their characteristics are analyzed.The light emitters have high spectral purity of 4 8nm and high electroluminescence intensity of 0 7mW while injection current is 50mA.A 1×16 array of surface emitting light device is tested on line by probes and then used for module.The light detectors have wavelength selectivity and space selectivity.The required difference in input mirror reflectivity between emitters and detectors can easily be achieved though varying the numbers of top DBR period by etching.
