Spectroscopic Evidence for Electron Correlations in Epitaxial Bilayer Graphene with Interface-Reconstructed Superlattice Potentials

Superlattice potentials are theoretically predicted to modify the single-particle electronic structures. The resulting Coulomb-interaction-dominated low-energy physics would generate highly novel many-body phenomena. Here,by in situ tunneling spectroscopy, we show the signatures of superstructure-modulated correlated electron states in epitaxial bilayer graphene(BLG) on 6H-Si C(0001). As the carrier density is locally quasi-‘tuned’ by the superlattice potentials of a 6 × 6 interface reconstruction phase, the spectral-weight transfer occurs between the two broad peaks flanking the charge-neutral point. Such a detected non-rigid band shift beyond the single-particle band description implies the existence of correlation effects, probably attributed to the modified interlayer coupling in epitaxial BLG by the 6×6 reconstruction as in magic-angle BLG by the moiré potentials. Quantitative analysis suggests that the intrinsic interface reconstruction shows a high carrier tunability of ~1/2 filling range, equivalent to the back gating by a voltage of ~70 V in a typical gated BLG/SiO_(2)/Si device. The finding in interfacemodulated epitaxial BLG with reconstruction phase extends the BLG platform with electron correlations beyond the magic-angle situation, and may stimulate further investigations on correlated states in graphene systems and other van der Waals materials.

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates

Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 Ω.mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4HoSiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance Rc of bilayer graphene improves from an average of 0.24Ω·mm to 0. 1 Ωmm. Ohmic contact formation mechanism analysis by Landauer＇s approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density high carrier transmission probability, and p-type doping introduced by contact metal Au.